Infineon Technologies 晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
制造商Infineon Technologies
記錄 6,749
頁面 103/225
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 150V 171A TO247 |
7,020 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 171A (Tc) | 10V | 5.9mOhm @ 103A, 10V | 5V @ 250µA | 227nC @ 10V | ±30V | 10470pF @ 50V | - | 517W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AD | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 34.1A TO-247 |
4,842 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 34.1A (Tc) | 10V | 118mOhm @ 21.6A, 10V | 5V @ 1.9mA | 212nC @ 10V | ±20V | 5060pF @ 25V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V TO220-3 |
3,454 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 18A (Tc) | 10V | 45mOhm @ 24.9A, 10V | 4V @ 1.25mA | 93nC @ 10V | ±20V | 4340pF @ 400V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
3,150 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 650V 39A TO-247 |
6,480 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 39A (Tc) | 10V | 75mOhm @ 26A, 10V | 3.5V @ 1.7mA | 116nC @ 10V | ±20V | 4000pF @ 100V | - | 313W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
5,238 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
8,316 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
AUTOMOTIVE |
2,520 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_LEGACY |
3,798 |
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CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 68.5A (Tc) | 10V | 41mOhm @ 33.1A, 10V | 4.5V @ 3.3mA | 300nC @ 10V | ±20V | 8400pF @ 100V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
4,518 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW |
6,786 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
PLANAR >= 100V |
2,772 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 36A (Tc) | 10V | 130mOhm @ 22A, 10V | 4V @ 250µA | 180nC @ 10V | ±30V | 5579pF @ 25V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | SUPER-247™ (TO-274AA) | TO-274AA |
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Infineon Technologies |
MOSFET N-CH 650V 47A TO-247 |
4,194 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 47A (Tc) | 10V | 70mOhm @ 30A, 10V | 3.9V @ 2.7mA | 255nC @ 10V | ±20V | 7000pF @ 25V | - | 415W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 600V 46A TO-247 |
2,736 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 46A (Tc) | 10V | 83mOhm @ 29A, 10V | 5V @ 2.9mA | 322nC @ 10V | ±20V | 7700pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH BARE DIE |
7,434 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
8,730 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 36A (Tc) | 10V | 120mOhm @ 26A, 10V | 3.5V @ 2.9mA | 270nC @ 10V | ±20V | 6800nF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 60A TO-247 |
3,454 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 60A (Tc) | 10V | 45mOhm @ 44A, 10V | 3.5V @ 3mA | 190nC @ 10V | ±20V | 6800pF @ 100V | - | 431W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
HIGH POWER_NEW |
3,888 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW |
2,700 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
HIGH POWER_NEW |
5,688 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
4,914 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO-252-3 |
5,364 |
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CoolMOS™ CE | N-Channel | MOSFET (Metal Oxide) | 600V | 3.1A (Tc) | 10V | 1.5Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 82A 5X6 PQFN |
7,758 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 82A (Tc) | 4.5V, 10V | 4.2mOhm @ 49A, 10V | 2.35V @ 50µA | 41nC @ 10V | ±20V | 2190pF @ 15V | - | 3.6W (Ta), 46W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerVDFN |
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Infineon Technologies |
MOSFET N-CH 55V 30A TO252-3 |
7,398 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 110nC @ 10V | ±20V | 1485pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO252-3 |
7,434 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 1.1A, 10V | 3.5V @ 90µA | 9.4nC @ 10V | ±20V | 200pF @ 100V | - | 28.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO-263 |
7,560 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 7.7mOhm @ 80A, 10V | 4V @ 150µA | 93nC @ 10V | ±20V | 3500pF @ 30V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V 4.5A D2PAK |
4,356 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Tc) | 10V | 950mOhm @ 2.8A, 10V | 3.9V @ 200µA | 25nC @ 10V | ±20V | 490pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
6,408 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC |
3,006 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 60mOhm @ 5.3A, 10V | 2.5V @ 250µA | 25nC @ 10V | ±12V | 860pF @ 10V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 7.3A 8-SOIC |
6,714 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 7.3A (Tc) | 4.5V, 10V | 30mOhm @ 7.3A, 10V | 1V @ 250µA | 28nC @ 10V | ±20V | 550pF @ 25V | - | 2.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |