ISSI, Integrated Silicon Solution Inc 內存
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類別半導體 / 內存IC / 內存
制造商ISSI, Integrated Silicon Solution Inc
記錄 4,379
頁面 112/146
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制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 54TSOP |
3,546 |
|
- | Volatile | DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
3,600 |
|
- | Volatile | DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
5,724 |
|
- | Volatile | DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
2,970 |
|
- | Volatile | DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
3,834 |
|
- | Volatile | DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 4.5V ~ 5.5V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ |
2,476 |
|
- | Volatile | DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm Width) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ |
6,462 |
|
- | Volatile | DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm Width) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP II |
3,006 |
|
- | Volatile | DRAM | DRAM - EDO | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ |
8,658 |
|
- | Volatile | DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm Width) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 42SOJ |
4,050 |
|
- | Volatile | DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 42-BSOJ (0.400", 10.16mm Width) | 42-SOJ |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 16M PARALLEL 44TSOP II |
2,664 |
|
- | Volatile | DRAM | DRAM - FP | 16Mb (1M x 16) | Parallel | - | - | 25ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP II |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
2,214 |
|
- | Volatile | DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
2,988 |
|
- | Volatile | DRAM | DRAM - EDO | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
2,340 |
|
- | Volatile | DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 4M PARALLEL 40TSOP |
6,048 |
|
- | Volatile | DRAM | DRAM - FP | 4Mb (256K x 16) | Parallel | - | - | 18ns | 3V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width), 40 Leads | 40-TSOP |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
2,988 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.5ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
5,670 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 166MHz | - | 5.5ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
2,034 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 54TFBGA |
4,050 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (16M x 16) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
4,374 |
|
- | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 54TFBGA |
6,588 |
|
- | Volatile | DRAM | SDRAM - Mobile | 128Mb (8M x 16) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
5,814 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
6,750 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
4,536 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90WBGA |
5,400 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (16M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | 0°C ~ 70°C (TA) | Surface Mount | 90-LFBGA | 90-WBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
4,932 |
|
- | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 128M PARALLEL 90TFBGA |
8,712 |
|
- | Volatile | DRAM | SDRAM - Mobile | 128Mb (4M x 32) | Parallel | 133MHz | - | 6ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
4,140 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | 0°C ~ 70°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
8,514 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
|
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 256M PARALLEL 90TFBGA |
4,806 |
|
- | Volatile | DRAM | SDRAM - Mobile | 256Mb (8M x 32) | Parallel | 133MHz | - | 5.4ns | 2.3V ~ 3V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |