Microsemi 整流器-單

系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

制造商Microsemi Corporation

記錄 2,560

頁面 76/86

型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
MSG110	Microsemi	DIODE SCHOTTKY 100V 1A DO204AL	7,974	-	Schottky	100V	1A	830mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
MSG140	Microsemi	DIODE SCHOTTKY 40V 1A DO204AL	3,366	-	Schottky	40V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
MSG145	Microsemi	DIODE SCHOTTKY 45V 1A DO204AL	6,498	-	Schottky	45V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
MSG150	Microsemi	DIODE SCHOTTKY 50V 1A DO204AL	8,478	-	Schottky	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
1N3064	Microsemi	DIODE GEN PURP 50V 75MA DO35	8,136	-	Standard	50V	75mA	1V @ 75mA	Small Signal =< 200mA (Io), Any Speed	4ns	100nA @ 50V	-	Through Hole	DO-204AA, DO-7, Axial	DO-35	-65°C ~ 125°C
1N3070	Microsemi	DIODE GEN PURP 175V 100MA DO7	5,634	-	Standard	175V	100mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 175V	-	Through Hole	DO-204AA, DO-7, Axial	DO-7	-65°C ~ 175°C
1N4448	Microsemi	DIODE GEN PURP 75V 200MA DO35	6,822	-	Standard	75V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N457A	Microsemi	DIODE GEN PURP 70V 150MA DO35	6,210	-	Standard	70V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 70V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N459A	Microsemi	DIODE GEN PURP 200V 150MA DO35	5,292	-	Standard	200V	150mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 200V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N3612	Microsemi	DIODE GEN PURP 400V 1A AXIAL	6,030	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 400V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N3614	Microsemi	DIODE GEN PURP 800V 1A AXIAL	6,552	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N3957	Microsemi	DIODE GEN PURP 1KV 1A AXIAL	5,562	-	Standard	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4248	Microsemi	DIODE GEN PURP 800V 1A AXIAL	5,850	-	Standard	800V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 800V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4249	Microsemi	DIODE GEN PURP 1KV 1A AXIAL	8,838	-	Standard	1000V	1A	1.3V @ 3A	Standard Recovery >500ns, > 200mA (Io)	5µs	1µA @ 1000V	-	Through Hole	A, Axial	-	-65°C ~ 175°C
1N4449	Microsemi	DIODE GEN PURP 75V 200MA DO35	6,372	-	Standard	75V	200mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
1N4534	Microsemi	DIODE GEN PURP 50V 150MA DO34	3,114	-	Standard	50V	150mA	880mV @ 20mA	Small Signal =< 200mA (Io), Any Speed	4ns	50nA @ 50V	-	Through Hole	DO-204AG, DO-34, Axial	DO-34	-65°C ~ 175°C
1N4534UR	Microsemi	DIODE SWITCHING	5,814	*	-	-	-	-	-	-	-	-	-	-	-	-
1N4944	Microsemi	DIODE GEN PURP 400V 1A AXIAL	6,976	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	35pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5181	Microsemi	DIODE GEN PURP 4KV 100MA AXIAL	7,020	-	Standard	4000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 4000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5182	Microsemi	DIODE GEN PURP 5KV 100MA AXIAL	6,012	-	Standard	5000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 5000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5184	Microsemi	DIODE GEN PURP 10KV 100MA SAXIAL	3,474	-	Standard	10000V	100mA	10V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	5µA @ 10000V	-	Through Hole	S, Axial	S, Axial	-65°C ~ 175°C
1N5188	Microsemi	DIODE GEN PURP 400V 3A AXIAL	8,262	-	Standard	400V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	2µA @ 400V	-	Through Hole	B, Axial	-	-65°C ~ 175°C
1N5415US	Microsemi	DIODE GEN PURP 50V 3A D5B	3,852	-	Standard	50V	3A	1.5V @ 9A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 50V	-	Surface Mount	E-MELF	D-5B	-65°C ~ 175°C
1N5621	Microsemi	DIODE GEN PURP 800V 1A AXIAL	8,892	-	Standard	800V	1A	1.6V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	500nA @ 800V	20pF @ 12V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5803	Microsemi	DIODE GEN PURP 75V 1A AXIAL	7,866	-	Standard	75V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 75V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 175°C
1N5805	Microsemi	DIODE GEN PURP 125V 1A AXIAL	7,146	-	Standard	125V	1A	875mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	1µA @ 125V	25pF @ 10V, 1MHz	Through Hole	A, Axial	-	-65°C ~ 125°C
1N5807US	Microsemi	DIODE GEN PURP 50V 3A B-MELF	5,238	-	Standard	50V	3A	875mV @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	5µA @ 50V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
1N5820US	Microsemi	DIODE SCHOTTKY 20V 3A B-MELF	6,516	-	Schottky	20V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
1N5821US	Microsemi	DIODE SCHOTTKY 30V 3A B-MELF	6,372	-	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 30V	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 125°C
1N6073	Microsemi	DIODE GEN PURP 50V 850MA AXIAL	2,610	-	Standard	50V	850mA	2.04V @ 9.4A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	A, Axial	-	-65°C ~ 155°C

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