Rohm Semiconductor 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Rohm Semiconductor
記錄 774
頁面 24/26
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 3A PMDS |
8,028 |
|
- | Schottky | 30V | 3A | 420mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
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|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 3A PMDT |
8,550 |
|
- | Schottky | 40V | 3A | 550mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | - | Surface Mount | SOD-128 | PMDT | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 5A PMDS |
4,068 |
|
- | Schottky | 30V | 5A | 490mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 5A PMDS |
3,508 |
|
- | Schottky | 40V | 5A | 530mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 40V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 60V 5A PMDS |
3,798 |
|
- | Schottky | 60V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 60V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 20V 5A PMDS |
1,611 |
|
- | Schottky | 20V | 5A | 390mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 30V 2A PMDS |
6,336 |
|
- | Schottky | 30V | 2A | 395mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | PMDS | 125°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 10A LPDS |
4,014 |
|
- | Standard | 600V | 10A | 1.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 430V 10A LPDS |
8,784 |
|
- | Standard | 430V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 430V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
3,870 |
|
- | Standard | 600V | 10A | 1.55V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 10A TO220NFM |
2,358 |
|
- | Standard | 600V | 10A | 2.8V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
8,982 |
|
- | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 20A TO220NFM |
6,588 |
|
- | Standard | 600V | 20A | 2.8V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 600V | - | Through Hole | TO-220-2 | TO-220NFM | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 20A LPDS |
3,276 |
|
- | Standard | 600V | 20A | 1.55V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | LPDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 600V 10A TO220FM |
3,132 |
|
- | Silicon Carbide Schottky | 600V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 430pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220FM | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 5A TO220AC |
3,636 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.75V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 325pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
2,502 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.75V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 650pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1.2KV 20A TO220AC |
6,624 |
|
- | Silicon Carbide Schottky | 1200V | 20A | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 1200V | 1300pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 80V 130MA LLDS |
3,096 |
|
- | Standard | 80V | 130mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 20nA @ 30V | 5pF @ 0.5V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | 175°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 75V 150MA GSD |
4,806 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | GSD | -65°C ~ 200°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 1A PMDS |
7,758 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 1A PMDS |
5,022 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 80V 130MA MSD |
5,886 |
|
- | Standard | 80V | 130mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 500nA @ 80V | 2pF @ 0.5V, 1MHz | Through Hole | DO-204AG, DO-34, Axial | MSD | 175°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 220V 200MA LLDS |
8,406 |
|
- | Standard | 220V | 200mA | 1.5V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 75ns | 10µA @ 220V | 3pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | -65°C ~ 175°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 50V 200MA LLDS |
6,048 |
|
- | Standard | 50V | 200mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 2.5pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | -65°C ~ 200°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 75V 150MA LLDS |
3,078 |
|
- | Standard | 75V | 150mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | LLDS | -65°C ~ 200°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 75V 150MA GSD |
8,712 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | GSD | -65°C ~ 200°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 75V 150MA GSD |
6,786 |
|
- | Standard | 75V | 150mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | GSD | -65°C ~ 200°C |
|
|
Rohm Semiconductor |
DIODE GEN PURP 400V 1A MSR |
8,946 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 400V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |
|
|
Rohm Semiconductor |
DIODE GEN PURP 600V 1A MSR |
8,532 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | - | Through Hole | DO-41 Mini, Axial | MSR | 150°C (Max) |