整流器-數組
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類別半導體 / 二極管與整流器 / 整流器-數組
記錄 11,588
頁面 204/387
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管配置 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io）（每個二極管） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 工作溫度-結點 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 250A 2 TOWER |
2,988 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 250A | 920mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 200V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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Littelfuse |
DIODE MODULE GP 1600V 160A S3 |
5,274 |
|
- | 1 Pair Common Cathode | Standard | 1600V | 160A | 1.5V @ 500A | Standard Recovery >500ns, > 200mA (Io) | - | 500µA @ 1600V | -40°C ~ 150°C | Chassis Mount | S-3 Module | S3 |
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Sensata-Crydom |
DIODE MODULE 400V 90A |
8,082 |
|
- | 1 Pair Series Connection | Standard | 400V | 90A (DC) | 1.4V @ 270A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 125°C | Chassis Mount | Module | Module |
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Microsemi |
DIODE MODULE 600V 20A SOT227 |
5,706 |
|
- | 2 Independent | Silicon Carbide Schottky | 600V | 20A | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 400µA @ 600V | -55°C ~ 175°C | Chassis Mount | ISOTOP | SOT-227 |
|
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|
Powerex Inc. |
DIODE MODULE 800V 160A POWRBLOK |
3,042 |
|
- | 1 Pair Series Connection | Standard | 800V | 160A | 1.43V @ 520A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 800V | -40°C ~ 150°C | Chassis Mount | POW-R-BLOK™ Module | POW-R-BLOK™ Module |
|
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|
Sensata-Crydom |
DIODE MODULE 1.6KV 60A |
3,546 |
|
- | 3 Common Cathode | Standard | 1600V | 60A | 1.35V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 125°C | Chassis Mount | Module | Module |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 40V 120A 2TOWER |
2,070 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 40V 120A 2TOWER |
2,628 |
|
- | 1 Pair Common Anode | Schottky | 40V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 60V 120A 2TOWER |
6,552 |
|
- | 1 Pair Common Anode | Schottky | 60V | 120A (DC) | 750mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 120A 2TOWER |
7,848 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 120A (DC) | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 60V 120A 2TOWER |
8,892 |
|
- | 1 Pair Common Cathode | Schottky | 60V | 120A (DC) | 750mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 120A 2TOWER |
3,870 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 20V 120A 2TOWER |
4,968 |
|
- | 1 Pair Common Anode | Schottky | 20V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 30V 120A 2TOWER |
2,178 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 120A (DC) | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 30V 120A 2TOWER |
3,436 |
|
- | 1 Pair Common Anode | Schottky | 30V | 120A (DC) | 650mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 35V 120A 2TOWER |
3,294 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 35V 120A 2TOWER |
3,436 |
|
- | 1 Pair Common Anode | Schottky | 35V | 120A (DC) | 650mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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|
GeneSiC Semiconductor |
DIODE MODULE 80V 120A 2TOWER |
6,642 |
|
- | 1 Pair Common Anode | Schottky | 80V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 80V 120A 2TOWER |
6,642 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 120A (DC) | 840mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER |
4,590 |
|
- | 1 Pair Common Cathode | Schottky | 100V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 100V 200A 2TOWER |
2,178 |
|
- | 1 Pair Common Anode | Schottky | 100V | 200A (DC) | 840mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE MODULE 45V 200A 2TOWER |
2,952 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 200A (DC) | 650mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 60V 200A 2TOWER |
2,664 |
|
- | 1 Pair Common Cathode | Schottky | 60V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE MODULE 60V 200A 2TOWER |
6,336 |
|
- | 1 Pair Common Anode | Schottky | 60V | 200A (DC) | 750mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5mA @ 20V | - | Chassis Mount | Twin Tower | Twin Tower |
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 60A 2 TOWER |
7,578 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 60A | 880mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 60A 2 TOWER |
4,608 |
|
- | 1 Pair Common Anode | Schottky | 150V | 60A | 880mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 150V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 60A 2 TOWER |
2,484 |
|
- | 1 Pair Common Cathode | Schottky | 200V | 60A | 920mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 200V 60A 2 TOWER |
4,950 |
|
- | 1 Pair Common Anode | Schottky | 200V | 60A | 920mV @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 200V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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GeneSiC Semiconductor |
DIODE SCHOTTKY 150V 100A 2 TOWER |
8,280 |
|
- | 1 Pair Common Cathode | Schottky | 150V | 100A | 880mV @ 100A | Fast Recovery =< 500ns, > 200mA (Io) | - | 3mA @ 150V | -55°C ~ 150°C | Chassis Mount | Twin Tower | Twin Tower |
|
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|
IXYS |
DIODE MODULE 1.8KV 224A Y4-M6 |
8,460 |
|
- | 1 Pair Series Connection | Standard | 1800V | 224A | 1.3V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1800V | - | Chassis Mount | Y4-M6 | Y4-M6 |