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數百萬庫存的電子零件。 接受缺貨訂單。 24小時內的價格和交貨時間報價。

整流器-單

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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 1109/1165
圖片
型號
制造商
描述
庫存
數量
系列
二極管類型
電壓-直流反向(Vr)(最大值)
電流-平均整流(Io)
電壓-正向(Vf)(最大值)@如果
速度
反向恢復時間(trr)
當前-反向泄漏@ Vr
電容@ Vr,F
安裝類型
包裝/箱
供應商設備包裝
工作溫度-結點
HER204G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO204AC
8,838
-
Standard
300V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER205G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
3,168
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
35pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER206G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO204AC
5,598
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER207G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
2,916
-
Standard
800V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
HER301G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
2,718
-
Standard
50V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER302G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
2,358
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER303G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
4,824
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER304G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO201AD
7,740
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER305G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
7,146
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
60pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER306G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO201AD
7,200
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
35pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER307G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 3A DO201AD
8,838
-
Standard
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
35pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER308G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 3A DO201AD
8,460
-
Standard
-
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 1000V
35pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HER601G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
6,030
-
Standard
50V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER603G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 6A R-6
5,292
-
Standard
200V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER604G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 6A R-6
7,938
-
Standard
300V
6A
1V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER605G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 6A R-6
8,910
-
Standard
400V
6A
1.3V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
HER606G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 6A R-6
4,500
-
Standard
600V
6A
1.7V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
65pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-55°C ~ 150°C
MUR160 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
6,372
-
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR160A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5,778
-
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
MUR160AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AL
5,814
Automotive, AEC-Q101
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
MUR160HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO204AC
2,772
Automotive, AEC-Q101
Standard
600V
1A
1.25V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 600V
27pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR190 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AC
6,192
-
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR190A B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AL
4,158
-
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
MUR190AHB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AL
2,376
Automotive, AEC-Q101
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 175°C
MUR190HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 900V 1A DO204AC
5,472
Automotive, AEC-Q101
Standard
900V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 900V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 175°C
MUR420 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
2,736
-
Standard
200V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
MUR420HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 4A DO201AD
5,976
Automotive, AEC-Q101
Standard
200V
4A
890mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
MUR440 B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
3,024
-
Standard
400V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
MUR440HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 4A DO201AD
2,394
Automotive, AEC-Q101
Standard
400V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
MUR460HB0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 4A DO201AD
5,292
Automotive, AEC-Q101
Standard
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 600V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C