整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 118/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 175V 100MA DO35 |
7,260 |
|
- | Standard | 175V | 100mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 50ns | 100nA @ 175V | - | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHTKY 650V 12A TO220AC |
7,405 |
|
Automotive, AEC-Q101, ECOPACK®2 | Silicon Carbide Schottky | 650V | 12A | 1.45V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 750pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 75A TO247 |
14,460 |
|
- | Standard | 600V | 75A | 2.5V @ 75A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 25µA @ 600V | - | Through Hole | TO-247-2 | TO-247 [B] | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 300V 60A TO247AC |
7,020 |
|
FRED Pt® | Standard | 300V | 60A | 1.45V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 42ns | 10µA @ 300V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A DOP3I |
7,320 |
|
- | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A DO247 |
15,420 |
|
- | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SC SCHKY 650V 10A TO220ACP |
9,600 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 | - | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 12A DO203AA |
7,692 |
|
- | Standard | 100V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.5mA @ 100V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 12A DO203AA |
6,516 |
|
- | Standard | 150V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 2.25mA @ 150V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1.2KV 15A DOP3I |
16,344 |
|
- | Standard | 1200V | 15A | 2.1V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 105ns | 15µA @ 1200V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 15A TO247AC |
96 |
|
HEXFRED® | Standard | 600V | 15A | 1.7V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A TO247-3 |
252 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3 | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 80A POWIRTAB |
8,544 |
|
FRED Pt® | Standard | 200V | 80A | 1.13V @ 80A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 200V | - | Through Hole | PowerTab™, PowIRtab™ | PowIRtab™ | - |
|
|
|
STMicroelectronics |
DIODE GEN PURP 1KV 30A DO247-2 |
8,172 |
|
Automotive, AEC-Q101 | Standard | 1000V | 30A | 2V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 15µA @ 1000V | - | Through Hole | DO-247-2 (Straight Leads) | - | -40°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 12A TO220FM |
19,188 |
|
- | Silicon Carbide Schottky | 650V | 12A | 1.55V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 240µA @ 600V | 438pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 25A DO203AA |
239 |
|
- | Standard | 600V | 25A | 1.3V @ 78A | Standard Recovery >500ns, > 200mA (Io) | - | 12mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
DIODE SCHOTTKY 650V 10A TO220-2 |
17,886 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 19A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 480pF @ 0V, 1MHz | Through Hole | TO-220-2 Isolated Tab | TO-220-2 Isolated Tab | -55°C ~ 175°C |
|
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|
STMicroelectronics |
DIODE GEN PURP 600V 60A DO247 |
15,444 |
|
- | Standard | 600V | 60A | 1.85V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 85ns | 50µA @ 600V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 6A TO247AC |
234 |
|
HEXFRED® | Standard | 1200V | 6A | 3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 5µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
8,724 |
|
- | Standard, Reverse Polarity | 600V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 12A DO203AA |
8,784 |
|
- | Standard | 600V | 12A | 1.35V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 1mA @ 600V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-203AA | -65°C ~ 200°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 600V 30A TO247AC |
8,568 |
|
FRED Pt® | Schottky | 600V | 30A | 2.65V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 26ns | 30µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 1.2KV 10A TO220AC |
5,922 |
|
ECOPACK®2 | Silicon Carbide Schottky | 1200V | 10A | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1200V | 725pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 15A DOP3I |
17,460 |
|
- | Standard | 600V | 15A | 3.6V @ 15A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 20µA @ 600V | - | Through Hole | DOP3I-2 Insulated (Straight Leads) | DOP3I | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A TO247AC |
22,296 |
|
FRED Pt® | Standard | 200V | 60A | 1.08V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 50µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 1.2KV 60A TO247AD |
17,964 |
|
HiPerFRED™ | Standard | 1200V | 60A | 2.66V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 40ns | 650µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 1200V 5A TO-220-2 |
15,996 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.6V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 270pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
7,561 |
|
FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 50µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -65°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 100V 12A DO4 |
8,556 |
|
- | Standard | 100V | 12A | 1.1V @ 12A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AA, DO-4, Stud | DO-4 | -65°C ~ 200°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 650V 10A TO-220-2 |
14,988 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.55V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 600V | 365pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |