整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 165/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Infineon Technologies |
SIC SCHOTTKY 1200V 20A TO247-2 |
8,568 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 62A (DC) | 1.65V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 166µA @ 1200V | 1368pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 12A TO247 |
8,406 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 12A (DC) | 1.7V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 70µA @ 650V | 363pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SIC SCHOTTKY 1200V 20A |
16,728 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 54.5A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1142pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 20A |
9,228 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 28A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 582pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 15A TO-220-2 |
7,920 |
|
- | Silicon Carbide Schottky | 1200V | 82A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 1200V | 1089pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 30A TO247-2 |
9,744 |
|
- | Silicon Carbide Schottky | 1200V | 30A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | - |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 15A TO-247-2 |
8,628 |
|
- | Silicon Carbide Schottky | 1200V | 75A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 14µA @ 1200V | 1089pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 40A SIC SBD |
10,980 |
|
- | Silicon Carbide Schottky | 650V | 48A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 1989pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC SCHOTTKY 1200V 30A TO247-2 |
6,240 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 87A (DC) | 1.65V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 248µA @ 1200V | 1980pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 16A TO247 |
8,082 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 16A (DC) | 1.7V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 90µA @ 650V | 471pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SCHOTTKY SIC 650V 20A DUAL |
11,676 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 45A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 960pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 20A TO-220-2 |
7,584 |
|
- | Silicon Carbide Schottky | 1200V | 94A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 1298pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 30A SIC SBD GEN1.5 |
10,776 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 37A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 1260pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 650V 50A TO-247-2 |
7,308 |
|
- | Silicon Carbide Schottky | 650V | 50A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | - | - | Through Hole | TO-247-2 | TO-247-2 | 175°C (Max) |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1200V 20A TO-247-2 |
6,120 |
|
- | Silicon Carbide Schottky | 1200V | 90A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 18µA @ 1200V | 1298pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 30A |
13,374 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 44A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 920pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 50A SIC SBD |
10,632 |
|
- | Silicon Carbide Schottky | 650V | 60A (DC) | 1.75V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 2530pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 20A TO247 |
7,680 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 20A (DC) | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 584pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 70A DO5 |
8,772 |
|
- | Standard, Reverse Polarity | 400V | 70A | 1.4V @ 70A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
ON Semiconductor |
1200V 20A AUTO SIC SBD |
11,028 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 30A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC SCHOTTKY 1200V 40A TO247-2 |
7,692 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 110A (DC) | 1.65V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 332µA @ 1200V | 2592pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 40A AUTO SIC SBD |
8,712 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 25A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1700V 10A TO-247-2 |
7,692 |
|
- | Silicon Carbide Schottky | 1700V | 50A (DC) | 1.8V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 12µA @ 1700V | 669pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE SCHOTTKY 45V 80A DO5 |
92 |
|
- | Schottky | 45V | 80A | 650mV @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 45V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 30A TO247 |
6,204 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 30A (DC) | 1.7V @ 30A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 860pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 60V 120A PRM1-1 |
12,396 |
|
- | Schottky | 60V | 120A | 540mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20mA @ 60V | 5200pF @ 5V, 1MHz | Chassis Mount | HALF-PAK | PRM1-1 (Half Pak Module) | -55°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
SIC SCHOTTKY 3300V 5A TO-263-7 |
6,948 |
|
- | Silicon Carbide Schottky | 3300V | 14A (DC) | 3V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 10µA @ 3kV | 288pF @ 1V, 1MHz | Surface Mount | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA | TO-263-7 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 40A TO247 |
8,172 |
|
Automotive, AEC-Q100/101, CoolSiC™ | Silicon Carbide Schottky | 650V | 40A (DC) | 1.7V @ 40A | No Recovery Time > 500mA (Io) | 0ns | 120µA @ 650V | 1138pF @ 1V, 1MHz | Through Hole | TO-247-3 | PG-TO247-3-41 | -40°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
SIC DIODE 1700V 50A TO-247-2 |
7,392 |
|
- | Silicon Carbide Schottky | 1700V | 216A (DC) | 1.8V @ 50A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 1700V | 3193pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Sensata-Crydom |
DIODE GEN PURP 1.2KV 55A MODULE |
6,966 |
|
- | Standard | 1200V | 55A (DC) | 1.4V @ 165A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis Mount | Module | Module | - |