整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 241/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE SCHOTTKY 45V 1A DO204AL |
1,690 |
|
Military, MIL-PRF-19500/586 | Schottky | 45V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 70pF @ 5V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 6A AXIAL |
3,924 |
|
- | Standard | 150V | 6A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | - | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
ON Semiconductor |
1200V 20A AUTO SIC SBD |
5,976 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 1200V | 32A (DC) | 1.75V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 1220pF @ 1V, 100KHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK-3 (TO-263) | -55°C ~ 175°C |
|
|
|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 20A |
5,130 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 54.5A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 1142pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2L | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA D5D |
6,912 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 50nA @ 20V | 5pF @ 0V, 1MHz | Surface Mount | SQ-MELF, D | D-5D | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA DO35 |
72,246 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 3A B-MELF |
19,272 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 150V | 60pF @ 10V, 1MHz | Surface Mount | SQ-MELF, B | B, SQ-MELF | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A D5A |
8,010 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 125V 300MA D5B |
909 |
|
Military, MIL-PRF-19500/578 | Standard | 125V | 300mA | 1.1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 20ns | 500nA @ 125V | - | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
289 |
|
Military, MIL-PRF-19500/411 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 1µA @ 600V | - | Through Hole | B, Axial | B, Axial | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A D5B |
6,600 |
|
- | Standard | 100V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 100V | - | Surface Mount | E-MELF | D-5B | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
16,356 |
|
Military, MIL-PRF-19500/437 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 1.2KV 43A TO247 |
7,362 |
|
- | Silicon Carbide Schottky | 1200V | 43A (DC) | 1.8V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 1200V | 104pF @ 400V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 200V 1A D5A |
8,088 |
|
Military, MIL-PRF-19500/427 | Standard | 200V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 200V | - | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 200°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 30A DO5 |
6,480 |
|
- | Standard, Reverse Polarity | 400V | 30A | 1V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
6,246 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.6V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 500nA @ 400V | 35pF @ 12V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 70V 33MA DO213AA |
19,332 |
|
Military, MIL-PRF-19500/444 | Schottky | 70V | 33mA | 1V @ 15mA | Small Signal =< 200mA (Io), Any Speed | - | 200nA @ 100V | 2pF @ 0V, 1MHz | Surface Mount | DO-213AA | DO-213AA | -65°C ~ 150°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
8,676 |
|
Military, MIL-PRF-19500/427 | Standard | 400V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 500nA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 200°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 3A AXIAL |
17,916 |
|
Military, MIL-PRF-19500/424 | Standard | 600V | 3A | 1.5V @ 9A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 2µA @ 600V | - | Through Hole | B, Axial | - | - |
|
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|
SMC Diode Solutions |
100V 60A PACKAGE MINI SPD-4 SCHO |
7,290 |
|
- | Schottky | 100V | 60A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 100V | 1200pF @ 5V, 1MHz | Surface Mount | Nonstandard SMD | Mini SPD-4 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 100V 50A DO5 |
8,766 |
|
- | Standard, Reverse Polarity | 100V | 50A | 1V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -55°C ~ 150°C |
|
|
|
Microsemi |
DIODE GP 1.5KV 250MA S AXIAL |
7,620 |
|
Military, MIL-PRF-19500/279 | Standard | 1500V | 250mA | 5V @ 250mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 1500V | - | Through Hole | S, Axial | S, Axial | -65°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY 100V 120A SPD-4 |
22,584 |
|
- | Schottky | 100V | 120A | 870mV @ 120A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 100V | 2400pF @ 5V, 1MHz | Surface Mount | SPD-4 | SPD-4 | -55°C ~ 175°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 400V 85A DO5 |
7,008 |
|
- | Standard, Reverse Polarity | 400V | 85A | 1.4V @ 85A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 25µA @ 100V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 150MA DO204AH |
1,929 |
|
- | Standard | 50V | 150mA | 880mV @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 50nA @ 50V | 2pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 1A AXIAL |
354 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 100V 3A AXIAL |
1,894 |
|
Military, MIL-PRF-19500/477 | Standard | 100V | 3A | 875mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 5µA @ 100V | 60pF @ 10V, 1MHz | Through Hole | B, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 150V 1A D5A |
17,166 |
|
Military, MIL-PRF-19500/477 | Standard | 150V | 1A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 10V, 1MHz | Surface Mount | SQ-MELF, A | D-5A | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 300MA DO204AH |
18,540 |
|
Military, MIL-PRF-19500/578 | Standard | 75V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 5ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA DO204AH |
8,652 |
|
Military, MIL-PRF-19500/609 | Standard | 50V | 300mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | - | Through Hole | DO-204AH, DO-35, Axial | - | -65°C ~ 175°C |