整流器-單

制造商

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系列

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二極管類型

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電壓-直流反向（Vr）（最大值）

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電流-平均整流（Io）

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電壓-正向（Vf）（最大值）@如果

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速度

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反向恢復時間（trr）

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當前-反向泄漏@ Vr

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電容@ Vr，F

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安裝類型

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包裝/箱

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供應商設備包裝

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工作溫度-結點

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類別半導體 / 二極管與整流器 / 整流器-單

記錄 34,936

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型號	制造商	描述	庫存	系列	二極管類型	電壓-直流反向（Vr）（最大值）	電流-平均整流（Io）	電壓-正向（Vf）（最大值）@如果	速度	反向恢復時間（trr）	當前-反向泄漏@ Vr	電容@ Vr，F	安裝類型	包裝/箱	供應商設備包裝	工作溫度-結點
CDBF0240	Comchip Technology	DIODE SCHOTTKY 40V 200MA 1005	2,970	-	Schottky	40V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
CDBUR0130	Comchip Technology	DIODE SCHOTTKY 30V 100MA 0603	3,528	-	Schottky	30V	100mA	440mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	30µA @ 30V	9pF @ 10V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
CDBUR0320	Comchip Technology	DIODE SCHOTTKY 20V 350MA 0603	3,852	-	Schottky	20V	350mA	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	6.4ns	5µA @ 10V	50pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
CDBUR40	Comchip Technology	DIODE SCHOTTKY 40V 200MA 0603	8,046	-	Schottky	40V	200mA	1V @ 40mA	Small Signal =< 200mA (Io), Any Speed	5ns	200nA @ 30V	5pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	125°C (Max)
CDBF0240-HF	Comchip Technology	DIODE SCHOTTKY 40V 200MA 1005	6,678	-	Schottky	40V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	10µA @ 30V	9pF @ 10V, 1MHz	Surface Mount	1005 (2512 Metric)	1005/SOD-323F	125°C (Max)
S07B-GS18	Vishay Semiconductor Diodes Division	DIODE GP 100V 700MA DO219AB	5,292	Automotive, AEC-Q101	Standard	100V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 100V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
S07D-GS18	Vishay Semiconductor Diodes Division	DIODE GP 200V 700MA DO219AB	3,186	Automotive, AEC-Q101	Standard	200V	700mA	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	10µA @ 200V	4pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 150°C
FSV330AF	ON Semiconductor	DIODE SCHOTTKY 30V 3A SMAF	4,464	Automotive, AEC-Q101	Schottky	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	12.5ns	100µA @ 30V	485pF @ 0V, 1MHz	Surface Mount	DO-214AD, SMAF	DO-214AD (SMAF)	-55°C ~ 150°C
SDM05A30CP3-7	Diodes Incorporated	SCHOTTKY RECTIFIER X3-WLB0603-2	4,302	-	Schottky	30V	500mA	710mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	4.8ns	9µA @ 30V	7pF @ 10V, 1MHz	Surface Mount	0201 (0603 Metric)	X3-WLB0603-2	-55°C ~ 150°C
EGP10K	ON Semiconductor	DIODE GEN PURP 800V 1A DO41	5,346	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
HT17G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A TS-1	4,374	-	Standard	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SF15GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO204AL	2,808	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF16GHR0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL	8,694	Automotive, AEC-Q101	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
1N5818-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30V 1A DO204AL	6,012	-	Schottky	30V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 30V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
SB120-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 20V 1A DO204AL	6,282	-	Schottky	20V	1A	480mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 125°C
RS1PB-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO220AA	6,732	eSMP®	Standard	100V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 100V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
RS1PD-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO220AA	5,346	eSMP®	Standard	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
RS1PG-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO220AA	6,804	eSMP®	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	1µA @ 400V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
RS1PJ-M3/85A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO220AA	6,498	eSMP®	Standard	600V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	1µA @ 600V	9pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
1N4002E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL	3,870	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
1N4003E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 1A DO204AL	4,014	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
1N4004E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL	5,220	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
1N4005E-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL	3,114	-	Standard	600V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
BYG21MHM2G	Taiwan Semiconductor Corporation	DIODE AVALANCHE 1.5A DO214AC	2,772	-	Avalanche	-	1.5A	1.6V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	120ns	1µA @ 1000V	13pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
APD260VRTR-G1	Diodes Incorporated	DIODE SCHOTTKY 60V 2A DO15	8,442	-	Schottky	60V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 125°C
SFT15G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	7,038	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A1G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	2,142	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT15G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A TS-1	4,860	-	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT16G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A TS-1	4,482	-	Standard	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SFT17G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1	2,376	-	Standard	500V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 500V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C

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