整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 477/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 40V 5A DO214AA |
3,186 |
|
Automotive, AEC-Q101 | Schottky | 40V | 5A | 550mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO214AA |
2,196 |
|
- | Schottky | 50V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 50V 5A DO214AA |
6,408 |
|
Automotive, AEC-Q101 | Schottky | 50V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AA |
2,790 |
|
- | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 60V 5A DO214AA |
6,894 |
|
Automotive, AEC-Q101 | Schottky | 60V | 5A | 750mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 60V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 20V 2A DO214AB |
7,470 |
|
- | Schottky | 20V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -50°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 150V 1A PMDU |
6,534 |
|
Automotive, AEC-Q101 | Schottky | 150V | 1A | 840mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20µA @ 150V | - | Surface Mount | SOD-123F | PMDU | 150°C (Max) |
|
|
|
Rohm Semiconductor |
DIODE SCHOTTKY 100V 2A PMDS |
2,236 |
|
- | Schottky | 100V | 2A | 800mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | - | Surface Mount | DO-214AC, SMA | PMDS | 150°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
3,834 |
|
eSMP® | Standard | 100V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO220AA |
2,844 |
|
eSMP® | Standard | 150V | 1A | 920mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 5µA @ 150V | 10pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 5A DO201AD |
5,166 |
|
Automotive, AEC-Q101 | Schottky | 150V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 150V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 200V 5A DO201AD |
8,820 |
|
Automotive, AEC-Q101 | Schottky | 200V | 5A | 1.05V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 4A DO214AB |
5,220 |
|
- | Standard | 800V | 4A | 1.15V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 800V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO214AB |
4,050 |
|
- | Standard | 100V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AB |
5,886 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 300V 3A DO214AB |
3,492 |
|
- | Standard | 300V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 300V | 80pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 3A DO214AB |
2,790 |
|
- | Standard | 600V | 3A | 1.7V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 50pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
|
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|
Diodes Incorporated |
DIODE SBR 100V 250MA 2DFN |
2,934 |
|
Automotive, AEC-Q101 | Super Barrier | 100V | 250mA | 800mV @ 200mA | Standard Recovery >500ns, > 200mA (Io) | - | 1µA @ 75V | - | Surface Mount | 0402 (1006 Metric) | X1-DFN1006-2 | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 3A DO201AD |
3,078 |
|
- | Standard | 50V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 50V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 3A DO201AD |
4,788 |
|
- | Standard | 100V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 100V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO201AD |
6,102 |
|
- | Standard | 200V | 3A | 950mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 5µA @ 200V | 80pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 6A R-6 |
6,912 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 50V | 60pF @ 4V, 1MHz | Through Hole | - | R-6 | -55°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1A DO220AA |
2,772 |
|
eSMP® | Standard | 50V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 50V | - | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A DO220AA |
5,508 |
|
eSMP® | Standard | 100V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 100V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 150V 1A DO220AA |
4,698 |
|
eSMP® | Standard | 150V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 150V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A DO220AA |
2,412 |
|
eSMP® | Standard | 200V | 1A | 900mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | 25pF @ 4V, 1MHz | Surface Mount | DO-220AA | DO-220AA (SMP) | -55°C ~ 175°C |
|
|
|
Toshiba Semiconductor and Storage |
DIODE SCHOTTKY 30V 2A M-FLAT |
6,120 |
|
- | Schottky | 30V | 2A | 480mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 30V | 90pF @ 10V, 1MHz | Surface Mount | SOD-128 | M-FLAT (2.4x3.8) | -40°C ~ 150°C |
|
|
|
ON Semiconductor |
DIODE GEN PURP 300V 3A DPAK |
5,508 |
|
SWITCHMODE™ | Standard | 300V | 3A | 1.15V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 300V | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -65°C ~ 175°C |
|
|
|
Diodes Incorporated |
DIODE GEN PURP 800V 3A DO201AD |
4,284 |
|
- | Standard | 800V | 3A | 1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | 25pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
|
|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 200V 3A DO214AA |
7,866 |
|
- | Standard | 200V | 3A | 1V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 10µA @ 200V | 46pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |