整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 619/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Microsemi |
DIODE GEN PURP 600V 3A DO215AB |
6,660 |
|
- | Standard | 600V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 700V 3A DO215AB |
4,572 |
|
- | Standard | 700V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 700V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 800V 3A DO215AB |
8,946 |
|
- | Standard | 800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 800V | - | Surface Mount | DO-215AB, SMC Gull Wing | DO-215AB | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SBD 650V 4PQFN |
8,226 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
AC/DC DIGITAL PLATFORM |
2,970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 10A TO220FP |
7,092 |
|
- | Standard | 200V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 10A TO220FP |
7,308 |
|
- | Standard | 600V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220FP |
4,212 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
6,966 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 2.2KV 30A TO263 |
4,104 |
|
- | Standard | 2200V | 30A | 1.26V @ 30A | Standard Recovery >500ns, > 200mA (Io) | - | 40µA @ 2200V | 7pF @ 700V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 8A TO247AC |
254 |
|
HEXFRED® | Standard | 600V | 8A | 1.7V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 55ns | 5µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 600V TO-247A |
5,544 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 40A TO247AC |
6,660 |
|
- | Standard | 1600V | 40A | 1.14V @ 40A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
3,132 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
IXYS |
DIODE ARRAY |
2,394 |
|
HiPerFRED²™ | Standard | 600V | 30A | 1.94V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 250µA @ 600V | 26pF @ 400V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 300V 30A TO247 |
8,928 |
|
HiPerFRED™ | Standard | 300V | 30A | 1.34V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 1µA @ 300V | - | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
IXYS |
DIODE GEN PURP 400V 30A TO247 |
5,364 |
|
HiPerFRED²™ | Standard | 400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 45ns | 1µA @ 400V | 32pF @ 200V, 1MHz | Through Hole | TO-247-2 | TO-247 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 65A 1200V TO-247 |
8,424 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 65A 1600V TO-247 |
5,958 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
STMicroelectronics |
DIODE GEN PURP 600V 8A TO220AC |
4,374 |
|
- | Standard | 600V | 8A | 3.4V @ 8A | Fast Recovery =< 500ns, > 200mA (Io) | 17ns | 6µA @ 600V | - | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 10A TO220FP |
5,418 |
|
- | Standard | 400V | 10A | 1.2V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220-2 Full Pack | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 50A TO247AD |
2,646 |
|
FRED Pt® | Standard | 1200V | 50A | 2.55V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 262ns | 330µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 75V 125MA DO34 |
6,408 |
|
- | Standard | 75V | 125mA | 1.2V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 20ns | 500nA @ 75V | - | Through Hole | DO-204AG, DO-34, Axial | DO-34 | -65°C ~ 175°C |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 10A VSON-4 |
2,970 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 180µA @ 650V | 300pF @ 1V, 1MHz | Surface Mount | 4-PowerTSFN | PG-VSON-4 | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 65A 1200V TO-247 |
3,636 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 600V 6A TO220-2 |
3,690 |
|
CoolSiC™+ | Silicon Carbide Schottky | 600V | 6A (DC) | 2.3V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 600V | 130pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2-1 | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
SIC DIODES |
7,002 |
|
CoolSiC™+ | Silicon Carbide Schottky | 650V | 29A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 33µA @ 420V | 495pF @ 1V, 1MHz | Surface Mount | 10-PowerSOP Module | PG-HDSOP-10-1 | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
PIV 100V IO 30A CHIP SIZE 175MIL |
8,064 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
SMC Diode Solutions |
PIV 200V IO 30A CHIP SIZE 175MIL |
7,398 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
RECTIFIER DIODE 45A 1200V TO-247 |
6,894 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |