整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 644/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Semtech |
DIODE GEN PURP 1KV 1A AXIAL |
7,308 |
|
- | Standard | 1000V | 1A (DC) | 1.2V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 1000V | - | Through Hole | Axial | Axial | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 600V 150A POWERTAB |
3,924 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 150A | 1.63V @ 150A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 8µA @ 600V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 50V 300MA AXIAL |
2,934 |
|
Military, MIL-PRF-19500/578 | Standard | 50V | 300mA | 1.2V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 6ns | 500nA @ 75V | 5pF @ 0V, 1MHz | Through Hole | D, Axial | - | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 95A DO203AB |
6,156 |
|
- | Standard | 1400V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
5,832 |
|
- | Standard | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
5,724 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.3V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 9mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 190°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
6,696 |
|
- | Standard | 1600V | 80A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.6KV 80A DO203AB |
8,892 |
|
- | Standard, Reverse Polarity | 1600V | 80A | 1.46V @ 220A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 40A DO203AB |
4,716 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 100µA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 3A D5B |
5,238 |
|
- | Standard | 400V | 3A | 1.2V @ 9A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | - | Surface Mount | SQ-MELF, B | D-5B | -65°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.4KV 40A DO203AB |
3,402 |
|
- | Standard, Reverse Polarity | 1400V | 40A | 1.5V @ 125A | Standard Recovery >500ns, > 200mA (Io) | - | 4.5mA @ 1400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 160°C |
|
|
|
Microsemi |
DIODE GEN PURP 600V 1A AXIAL |
2,484 |
|
Military, MIL-PRF-19500/286 | Standard | 600V | 1A | 1.3V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 1µA @ 600V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
8,568 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Microsemi |
DIODE SCHOTTKY 20V 1A DO213AB |
6,399 |
|
- | Schottky | 20V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 20V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
GeneSiC Semiconductor |
DIODE GEN PURP REV 200V 40A DO5 |
14 |
|
- | Standard, Reverse Polarity | 200V | 40A | 1.1V @ 40A | - | - | 10µA @ 50V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-5 | -65°C ~ 190°C |
|
|
|
Microsemi |
DIODE GEN PURP 1KV 1A AXIAL |
7,596 |
|
Military, MIL-PRF-19500/228 | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 300V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURP 400V 1A AXIAL |
2,358 |
|
Military, MIL-PRF-19500/360 | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 1µA @ 400V | - | Through Hole | A, Axial | - | -65°C ~ 175°C |
|
|
|
Microsemi |
DIODE GEN PURPOSE |
2,970 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 60A TO247AC |
1,323 |
|
- | Standard | 800V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Microsemi |
DIODE SCHOTTKY 60V 1A DO213AB |
5,310 |
|
- | Schottky | 60V | 1A | 690mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 60V | - | Surface Mount | DO-213AB, MELF | DO-213AB | -55°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE 1.2KV 60A TO247AC |
8,262 |
|
- | Standard | 1200V | 60A | 1.09V @ 60A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 40A TO247AC |
8,532 |
|
- | Standard | 1200V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 60A DO203AB |
2,106 |
|
- | Standard | 200V | 60A | 1.3V @ 188A | Standard Recovery >500ns, > 200mA (Io) | - | 10mA @ 200V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -65°C ~ 200°C |
|
|
|
Global Power Technologies Group |
DIODE SCHOTTKY 600V 68A TO247-2 |
3,708 |
|
Amp+™ | Silicon Carbide Schottky | 600V | 68A (DC) | 1.65V @ 24A | No Recovery Time > 500mA (Io) | - | 80µA @ 600V | 1265pF @ 1V, 1MHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 40A TO247AC |
4,860 |
|
- | Standard | 1000V | 40A | 1.4V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A DO203AB |
2,952 |
|
- | Standard | 400V | 40A | 1.95V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 100µA @ 400V | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB | -40°C ~ 125°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 40A TO247AC |
7,920 |
|
- | Standard | 400V | 40A | 1.25V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Littelfuse |
DIODE SC SCHOTTKY 1200V 5A TO220 |
8,262 |
|
- | Silicon Carbide Schottky | 1200V | 5A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 190µA @ 1200V | 260pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220AC | 175°C (Max) |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
6,066 |
|
- | Standard | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 95A DO203AB |
5,544 |
|
- | Standard, Reverse Polarity | 1200V | 95A | 1.4V @ 267A | Standard Recovery >500ns, > 200mA (Io) | - | - | - | Chassis, Stud Mount | DO-203AB, DO-5, Stud | DO-203AB (DO-5) | -55°C ~ 180°C |