整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 93/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 800MA SUBSMA |
315,906 |
|
- | Standard | 800V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 100V 1A DO214AC |
112,596 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.5µs | 1µA @ 100V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 175°C |
|
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|
ON Semiconductor |
DIODE GEN PURP 800V 2A SMB |
7,799 |
|
- | Standard | 800V | 2A | 1.15V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 800V | 30pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 700MA DO219AB |
581,742 |
|
- | Standard | 1000V | 700mA | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 10µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | DO-219AB (SMF) | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SUB SMA |
56,088 |
|
- | Standard | 1000V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 1000V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SCHOTTKY 20V 200MA 0603 |
112,506 |
|
- | Schottky | 20V | 200mA | 390mV @ 200mA | Small Signal =< 200mA (Io), Any Speed | - | 30µA @ 10V | 30pF @ 1V, 1MHz | Surface Mount | SC-79, SOD-523F | 0603/SOD-523F | -55°C ~ 125°C |
|
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|
Nexperia |
DIODE SCHOTTKY 40V 1A SOT666 |
31,740 |
|
- | Schottky | 40V | 1A (DC) | 640mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 40V | 50pF @ 1V, 1MHz | Surface Mount | SOT-563, SOT-666 | SOT-666 | 150°C (Max) |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 50V 1A SUB SMA |
29,364 |
|
- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 5µA @ 50V | 9pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 175°C |
|
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|
Diodes Incorporated |
DIODE SCHTKY 40V 500MA X3WLB1006 |
100,644 |
|
- | Schottky | 40V | 500mA | 460mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 75µA @ 40V | 35pF @ 4V, 1MHz | Surface Mount | 2-XDFN | X3-WLB1006-2 | -55°C ~ 150°C |
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|
Rohm Semiconductor |
DIODE SCHOTTKY 40V 100MA UMD2 |
23,832 |
|
- | Schottky | 40V | 100mA | 450mV @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 1µA @ 10V | 6pF @ 10V, 1MHz | Surface Mount | SC-90, SOD-323F | UMD2 | 125°C (Max) |
|
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|
SMC Diode Solutions |
DIODE SCHOTTKY 30V 2A SMB |
23,952 |
|
- | Schottky | 30V | 2A | 550mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 30V | - | Surface Mount | DO-214AA, SMB | SMB | -55°C ~ 150°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SOD123W |
207,420 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1A SOD123W |
70,452 |
|
- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 600V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 1A SOD123W |
49,026 |
|
- | Standard | 1000V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 1000V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MICROSMP |
147,780 |
|
eSMP® | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 780ns | 1µA @ 200V | 5pF @ 4V, 1MHz | Surface Mount | MicroSMP | MicroSMP (DO-219AD) | -55°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 500MA SUBSMA |
105,642 |
|
- | Standard | 600V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 600V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 800V 500MA SUBSMA |
81,216 |
|
- | Standard | 800V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 500MA SUB SMA |
25,254 |
|
- | Standard | 1000V | 500mA | 1.3V @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 4pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 2A MICROSMP |
165,570 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 45V | 2A | 560mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 350µA @ 45V | 300pF @ 4V, 1MHz | Surface Mount | DO-219AD | MicroSMP (DO-219AD) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20V SOD123 |
102,186 |
|
- | Schottky | 20V | - | 600mV @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 10ns | 5µA @ 10V | 50pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 2A MICROSMP |
71,490 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 60V | 2A | 630mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | 195pF @ 4V, 1MHz | Surface Mount | DO-219AD | MicroSMP (DO-219AD) | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 150V 2A MICROSMP |
87,510 |
|
eSMP® | Schottky | 150V | 2A | - | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 150V | 100pF @ 4V, 1MHz | Surface Mount | DO-219AD | MicroSMP (DO-219AD) | -40°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 45V 1A MICROSMP |
38,760 |
|
Automotive, AEC-Q101, eSMP® | Schottky | 45V | 1A | 530mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 250µA @ 45V | 200pF @ 4V, 1MHz | Surface Mount | DO-219AD | MicroSMP (DO-219AD) | -40°C ~ 150°C |
|
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|
Comchip Technology |
DIODE SCHOTTKY 100V 300MA 1005 |
32,244 |
|
- | Schottky | 100V | 300mA | 820mV @ 300mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50µA @ 100V | 25pF @ 1V, 1MHz | Surface Mount | 1005 (2512 Metric) | 1005/SOD-323F | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1A DO214AC |
51,054 |
|
- | Schottky | 30V | 1A | 520mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 125°C |
|
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 400V 1A SOD123W |
622,182 |
|
- | Standard | 400V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 175°C |
|
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|
Taiwan Semiconductor Corporation |
DIODE GEN PURP 1KV 800MA SUB SMA |
178,032 |
|
- | Standard | 1000V | 800mA | 1.3V @ 800mA | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 10pF @ 4V, 1MHz | Surface Mount | DO-219AB | Sub SMA | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 30V 500MA SOD123 |
24,060 |
|
- | Schottky | 30V | 500mA | 430mV @ 500mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 130µA @ 30V | 170pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -55°C ~ 125°C |
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Taiwan Semiconductor Corporation |
DIODE GEN PURP 600V 1.2A SOD123 |
205,680 |
|
- | Standard | 600V | 1.2A | 1.3V @ 1.2A | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 600V | - | Surface Mount | SOD-123H | SOD-123HE | -55°C ~ 150°C |
|
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Taiwan Semiconductor Corporation |
DIODE SCHOTTKY 150V 1A SOD123W |
94,584 |
|
- | Schottky | 150V | 1A | 950mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 10µA @ 150V | - | Surface Mount | SOD-123W | SOD123W | -55°C ~ 150°C |