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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 1527/1553
圖片
型號
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描述
庫存
數量
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內存類型
內存格式
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內存大小
內存接口
時鐘頻率
寫周期-字,頁
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電壓-供電
工作溫度
安裝類型
包裝/箱
供應商設備包裝
EDF8165A3MC-GD-F-R
Micron Technology Inc.
IC DRAM 8G FBGA
7,866
-
-
-
-
-
-
-
-
-
-
-
-
-
-
R1LV3216RSA-5SI#S1
Renesas Electronics America
IC SRAM 32M PARALLEL 48TSOP I
7,074
-
Volatile
SRAM
SRAM
32Mb (4M x 8, 2M x 16)
Parallel
-
55ns
55ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
R1LV3216RSD-5SI#S0
Renesas Electronics America
IC SRAM 32M PARALLEL 52TSOP II
6,588
-
Volatile
SRAM
SRAM
32Mb (4M x 8, 2M x 16)
Parallel
-
55ns
55ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
52-TFSOP (0.350", 8.89mm Width)
52-TSOP II
R1WV6416RBG-5SI#S0
Renesas Electronics America
64M MCP(2X32M) ADV.SRAM 3V FBGA
7,434
-
Volatile
SRAM
SRAM
64Mb (8M x 8, 4M x 16)
Parallel
-
55ns
55ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFBGA
48-TFBGA (8.5x11)
R1WV6416RSA-5SI#S0
Renesas Electronics America
64M ADV LPSRAM, STACKED, TSOP, P
4,248
-
Volatile
SRAM
SRAM
64Mb (8M x 8, 4M x 16)
Parallel
-
55ns
55ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
R1WV6416RSD-5SI#S0
Renesas Electronics America
64M ADV LPSRAM, STACKED, UTSOP,
7,128
-
Volatile
SRAM
SRAM
64Mb (8M x 8, 4M x 16)
Parallel
-
55ns
55ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
52-TFSOP (0.350", 8.89mm Width)
52-TSOP II
MT40A4G4NRE-083E C:B
Micron Technology Inc.
IC DRAM 16G PARALLEL 78FBGA
2,988
-
Volatile
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.2GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
78-TFBGA
78-FBGA (8x12)
MTFC32GJWDQ-4M AIT Z
Micron Technology Inc.
IC FLASH 256G MMC LBGA
2,376
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
100-LBGA
100-LBGA (14x18)
MTFC32GJWDQ-4M AIT Z TR
Micron Technology Inc.
IC FLASH 256G MMC LBGA
6,786
-
Non-Volatile
FLASH
FLASH - NAND
256Gb (32G x 8)
MMC
-
-
-
2.7V ~ 3.6V
-40°C ~ 85°C
Surface Mount
100-LBGA
100-LBGA (14x18)
MT40A4G4HPR-075H:G TR
Micron Technology Inc.
MEMORY DRAM
7,200
TwinDie™
Volatile
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.333GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
-
-
-
MT40A8G4KVA-075H:G TR
Micron Technology Inc.
MEMORY DRAM
4,824
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K256M16TW-107 AT:P TR
Micron Technology Inc.
MEMORY DRAM
6,732
-
Volatile
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
MT40A4G4HPR-075H:G
Micron Technology Inc.
MEMORY DRAM
6,264
TwinDie™
Volatile
DRAM
SDRAM - DDR4
16Gb (4G x 4)
Parallel
1.333GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
-
-
-
MT40A8G4KVA-075H:G
Micron Technology Inc.
MEMORY DRAM
8,694
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MT41K256M16TW-107 AT:P
Micron Technology Inc.
MEMORY DRAM
7,524
-
Volatile
DRAM
SDRAM - DDR3L
4Gb (256M x 16)
Parallel
933MHz
-
20ns
1.283V ~ 1.45V
-40°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (8x14)
DS2433X-300-EC#TW
Maxim Integrated
IC EEPROM 4K 1WIRE
4,428
-
Non-Volatile
EEPROM
EEPROM
4Kb (256 x 16)
1-Wire®
-
1µs
-
2.8V ~ 6V
-40°C ~ 85°C (TA)
Surface Mount
6-XBGA, FCBGA
6-FlipChip (2.82x2.54)
MT29F128G08CFEFBWP:F
Micron Technology Inc.
IC FLASH SLC 128G 16GX8 DDP
8,010
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
128Gb (16G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F64G08CBEFBL94C3WC1-M
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
6,696
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
Die
Wafer
MT29F64G08CBEFBL94C3WC2
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
7,920
*
-
-
-
-
-
-
-
-
-
-
-
-
-
MT29F64G08CBEFBWP:F
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
7,884
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F64G08CBEFBWP-M:F
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
3,258
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F64G08CBEFBWPR:F
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
5,868
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
MT29F64G08CBEFBL94C3WC1
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
5,544
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
Die
Wafer
MT29F64G08CBEFBL94C3WC1-R
Micron Technology Inc.
IC FLASH MLC 64G 8GX8
5,094
-
Non-Volatile
FLASH
FLASH - NAND (MLC)
64Gb (8G x 8)
Parallel
-
-
-
2.7V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
Die
Wafer
MT58K256M321JA-100:A
Micron Technology Inc.
IC DRAM 4G 256X32 190FBGA
4,644
-
Volatile
DRAM
SGRAM - GDDR5
8Gb (256M x 32)
-
5GHz
-
-
1.31V ~ 1.39V
0°C ~ 95°C (TC)
Surface Mount
190-TFBGA
190-FBGA (10x14)
MT40A256M16GE-062E:B TR
Micron Technology Inc.
IC DRAM 4G PARALLEL 96FBGA
6,408
-
Volatile
DRAM
SDRAM - DDR4
4Gb (256M x 16)
Parallel
1.6GHz
-
-
1.14V ~ 1.26V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-FBGA (9x14)
R1RP0408DGE-2LR#B0
Renesas Electronics America
IC SRAM 4M FAST 36-SOJ
4,572
-
Volatile
SRAM
SRAM
4Mb (512K x 8)
Parallel
-
12ns
12ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
R1RP0408DGE-2PI#B0
Renesas Electronics America
IC SRAM 4M FAST 36-SOJ
4,410
-
Volatile
SRAM
SRAM
4Mb (512K x 8)
Parallel
-
12ns
12ns
4.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
R1RP0408DGE-2PR#B0
Renesas Electronics America
IC SRAM 4M FAST 36-SOJ
8,658
-
Volatile
SRAM
SRAM
4Mb (512K x 8)
Parallel
-
12ns
12ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
36-BSOJ (0.400", 10.16mm Width)
36-SOJ
R1RP0416DGE-2LR#B0
Renesas Electronics America
IC SRAM 4M FAST 44-SOJ
8,100
-
Volatile
SRAM
SRAM
4Mb (256K x 16)
Parallel
-
12ns
12ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Surface Mount
44-BSOJ (0.400", 10.16mm Width)
44-SOJ