內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 496/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 60FBGA |
8,082 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 1Gb (256M x 4) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | 0°C ~ 85°C (TC) | Surface Mount | 60-TFBGA | 60-FBGA (8x10) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
3,654 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 200MHZ |
5,796 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP II |
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|
ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA |
3,420 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC FLASH 512M SPI 24TFBGA |
6,030 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O, QPI, DTR | 133MHz | 1.6ms | - | 2.3V ~ 3.6V | -40°C ~ 105°C | Surface Mount | 24-TBGA | 24-TFBGA (6x8) |
|
|
|
Micron Technology Inc. |
IC SDRAM DDR4 4G PAR 96FBGA |
3,186 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.333GHz | 15ns | 19ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
|
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|
Micron Technology Inc. |
IC SDRAM DDR4 4G PAR 96FBGA |
2,502 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (256M x 16) | Parallel | 1.2GHz | 15ns | 19ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (9x14) |
|
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|
Micron Technology Inc. |
IC SDRAM DDR4 4G 78FBGA |
5,346 |
|
- | Volatile | DRAM | SDRAM - DDR4 | 4Gb (512M x 8) | Parallel | 1.2GHz | 15ns | 19ns | 1.14V ~ 1.26V | 0°C ~ 95°C (TC) | Surface Mount | 78-TFBGA | 78-FBGA (9x10.5) |
|
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|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 90VFBGA |
4,518 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (32M x 32) | Parallel | 200MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-VFBGA | 90-VFBGA (8x13) |
|
|
|
Micron Technology Inc. |
IC DRAM 1G PARALLEL 60VFBGA |
2,826 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (64M x 16) | Parallel | 200MHz | 15ns | 5.0ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 60-VFBGA | 60-VFBGA (8x9) |
|
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|
Micron Technology Inc. |
IC SDRAM 4GBIT 933MHZ 96FBGA |
7,614 |
|
- | Volatile | DRAM | SDRAM - DDR3L | 4Gb (256M x 16) | Parallel | 933MHz | - | 20ns | 1.283V ~ 1.45V | -40°C ~ 95°C (TC) | Surface Mount | 96-TFBGA | 96-FBGA (8x14) |
|
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|
Cypress Semiconductor |
IC SRAM 4M PARALLEL |
3,780 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 44-BSOJ (0.400", 10.16mm Width) | 44-SOJ |
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|
Cypress Semiconductor |
IC SRAM 4M PARALLEL |
5,868 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (512K x 8) | Parallel | - | 10ns | 10ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 36-BSOJ (0.400", 10.16mm Width) | 36-SOJ |
|
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|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 119PBGA |
3,384 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 166MHz | - | 3.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 119-BGA | 119-PBGA (14x22) |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
6,300 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 400MHz | 15ns | 400ps | 1.7V ~ 1.9V | -40°C ~ 85°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
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|
IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
3,600 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
4,860 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
6,822 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 150MHz | - | 3.8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
7,326 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (256K x 18) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
3,744 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (256K x 18) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
4,140 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (256K x 18) | Parallel | 117MHz | - | 7.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
8,712 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (256K x 18) | Parallel | 100MHz | - | 8ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
6,444 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (256K x 18) | Parallel | 87MHz | - | 8.5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
8,892 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 100MHz | - | 5ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x20) |
|
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IDT, Integrated Device Technology |
IC SRAM 4.5M PARALLEL 100TQFP |
7,254 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR (ZBT) | 4.5Mb (128K x 36) | Parallel | 133MHz | - | 4.2ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 100-LQFP | 100-TQFP (14x14) |
|
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|
Alliance Memory, Inc. |
IC DRAM 2G PARALLEL 78FBGA |
4,536 |
|
- | Volatile | DRAM | SDRAM - DDR3 | 2Gb (256M x 8) | Parallel | 800MHz | 15ns | 20ns | 1.425V ~ 1.575V | -40°C ~ 95°C (TC) | Surface Mount | 78-VFBGA | 78-FBGA (8x10.5) |
|
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Cypress Semiconductor |
IC NVSRAM 256K SPI 40MHZ 8SOIC |
2,358 |
|
- | Non-Volatile | NVSRAM | NVSRAM (Non-Volatile SRAM) | 256Kb (32K x 8) | SPI | 40MHz | - | - | 4.5V ~ 5.5V | -40°C ~ 105°C (TA) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC |
|
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|
ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 84TWBGA |
7,452 |
|
- | Volatile | DRAM | SDRAM - DDR2 | 512Mb (32M x 16) | Parallel | 333MHz | 15ns | 450ps | 1.7V ~ 1.9V | -40°C ~ 105°C (TA) | Surface Mount | 84-TFBGA | 84-TWBGA (8x12.5) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 16M PARALLEL 48VFBGA |
3,366 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (6x8) |
|
|
|
ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48TFBGA |
2,952 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 10ns | 10ns | 2.4V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-TFBGA (6x8) |