內存
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類別半導體 / 內存IC / 內存
記錄 46,590
頁面 512/1553
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 內存類型 | 內存格式 | 技術 | 內存大小 | 內存接口 | 時鐘頻率 | 寫周期-字，頁 | 訪問時間 | 電壓-供電 | 工作溫度 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
7,830 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
3,654 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Micron Technology Inc. |
IC DRAM 512M PARALLEL 60FBGA |
4,446 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 60-TFBGA | 60-FBGA (8x12.5) |
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Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
8,100 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (32M x 16) | Parallel | 200MHz | 15ns | 700ps | 2.5V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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Micron Technology Inc. |
IC DRAM 512M PARALLEL 66TSOP |
2,826 |
|
- | Volatile | DRAM | SDRAM - DDR | 512Mb (64M x 8) | Parallel | 200MHz | 15ns | 700ps | 2.3V ~ 2.7V | -40°C ~ 85°C (TA) | Surface Mount | 66-TSSOP (0.400", 10.16mm Width) | 66-TSOP |
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|
Cypress Semiconductor |
IC NOR |
8,748 |
|
Automotive, AEC-Q100, FL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (64M x 8) | SPI - Quad I/O | 133MHz | - | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SOIC |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 533MHZ |
6,606 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR2-S4 | 1Gb (64M x 16) | Parallel | 533MHz | 15ns | - | 1.14V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 134-TFBGA | 134-TFBGA (10x11.5) |
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Cypress Semiconductor |
IC SRAM 8M PARALLEL 48TSOP I |
4,338 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 8Mb (512K x 16) | Parallel | - | 45ns | 45ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Micron Technology Inc. |
IC FLASH 1G SPI 133MHZ 24TPBGA |
7,146 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 24-TBGA | 24-T-PBGA (6x8) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 3M PARALLEL 119PBGA |
2,052 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 3Mb (128K x 24) | Parallel | - | 8ns | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BBGA | 119-PBGA (14x22) |
|
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|
Alliance Memory, Inc. |
IC SRAM 16M PARALLEL 48TFBGA |
2,358 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 16Mb (2M x 8) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-LFBGA | 48-TFBGA (8x10) |
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Alliance Memory, Inc. |
IC SRAM 16M PARALLEL 48TSOP I |
5,004 |
|
- | Volatile | SRAM | SRAM | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 90TFBGA |
7,416 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 512Mb (16M x 32) | Parallel | 166MHz | 12ns | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 90-TFBGA | 90-TFBGA (8x13) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 3M PARALLEL 119PBGA |
3,402 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 3Mb (128K x 24) | Parallel | - | 8ns | 8ns | 3.135V ~ 3.465V | 0°C ~ 70°C (TA) | Surface Mount | 119-BBGA | 119-PBGA (14x22) |
|
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4.5M PARALLEL 165TFBGA |
2,556 |
|
- | Volatile | SRAM | SRAM - Synchronous, SDR | 4.5Mb (128K x 36) | Parallel | 200MHz | - | 3.1ns | 3.135V ~ 3.465V | -40°C ~ 85°C (TA) | Surface Mount | 165-TBGA | 165-TFBGA (13x15) |
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Rohm Semiconductor |
IC DRAM 16M PARALLEL 50TSOP |
6,732 |
|
- | Volatile | DRAM | DRAM | 16Mb (1M x 16) | Parallel | - | - | 30ns | 4.5V ~ 5.5V | 0°C ~ 70°C (TA) | - | - | - |
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Cypress Semiconductor |
IC FLASH 256M PARALLEL 84FBGA |
2,610 |
|
WS-P | Non-Volatile | FLASH | FLASH - NOR | 256Mb (16M x 16) | Parallel | 80MHz | 60ns | 80ns | 1.7V ~ 1.95V | -25°C ~ 85°C (TA) | Surface Mount | 84-VFBGA | 84-FBGA (11.6x8) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
7,560 |
|
Automotive, AEC-Q100, GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 56BGA |
7,002 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 110ns | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 56-VFBGA | 56-FBGA (9x7) |
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Cypress Semiconductor |
IC FLASH 512M PARALLEL 64FBGA |
4,338 |
|
GL-S | Non-Volatile | FLASH | FLASH - NOR | 512Mb (32M x 16) | Parallel | - | 60ns | 120ns | 1.65V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 64-LBGA | 64-FBGA (9x9) |
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Micron Technology Inc. |
IC FLASH 4G PARALLEL TSOP |
529 |
|
Automotive, AEC-Q100 | Non-Volatile | FLASH | FLASH - NAND | 4Gb (512M x 8) | Parallel | - | - | - | 2.7V ~ 3.6V | -40°C ~ 105°C (TA) | Surface Mount | 48-TFSOP (0.724", 18.40mm Width) | 48-TSOP I |
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Everspin Technologies Inc. |
IC RAM 1M PARALLEL 44TSOP2 |
7,488 |
|
- | Non-Volatile | RAM | MRAM (Magnetoresistive RAM) | 1Mb (128K x 8) | Parallel | - | 35ns | 35ns | 3V ~ 3.6V | 0°C ~ 70°C (TA) | Surface Mount | 44-TSOP (0.400", 10.16mm Width) | 44-TSOP2 |
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Micron Technology Inc. |
IC FLASH 1G SPI 166MHZ 16SOP2 |
3,780 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 166MHz | 8ms, 2.8ms | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 16-SOIC (0.295", 7.50mm Width) | 16-SO |
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Micron Technology Inc. |
IC FLASH 1G SPI 133MHZ 8WPDFN |
49,558 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 2.7V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 8-WFDFN Exposed Pad | 8-WPDFN (8x6) (MLP8) |
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Micron Technology Inc. |
IC FLASH 1G SPI 133MHZ 8WPDFN |
8,062 |
|
- | Non-Volatile | FLASH | FLASH - NOR | 1Gb (128M x 8) | SPI | 133MHz | 8ms, 2.8ms | - | 1.7V ~ 2V | -40°C ~ 85°C (TA) | Surface Mount | 8-WDFN Exposed Pad | 8-WPDFN (6x8) (MLP8) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 1G PARALLEL 60TWBGA |
4,554 |
|
- | Volatile | DRAM | SDRAM - Mobile LPDDR | 1Gb (64M x 16) | Parallel | 200MHz | 15ns | 5ns | 1.7V ~ 1.95V | 0°C ~ 70°C (TA) | Surface Mount | 60-TFBGA | 60-TWBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC SRAM 4M PARALLEL 48MINIBGA |
5,688 |
|
- | Volatile | SRAM | SRAM - Asynchronous | 4Mb (256K x 16) | Parallel | - | 12ns | 12ns | 3.135V ~ 3.6V | -40°C ~ 125°C (TA) | Surface Mount | 48-TFBGA | 48-miniBGA (8x10) |
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ISSI, Integrated Silicon Solution Inc |
IC DRAM 512M PARALLEL 54TFBGA |
3,400 |
|
- | Volatile | DRAM | SDRAM - Mobile | 512Mb (32M x 16) | Parallel | 166MHz | - | 5.5ns | 1.7V ~ 1.95V | -40°C ~ 85°C (TA) | Surface Mount | 54-TFBGA | 54-TFBGA (8x8) |
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Cypress Semiconductor |
IC SRAM 16M PARALLEL 48VFBGA |
18,655 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (1M x 16) | Parallel | - | 55ns | 55ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (8x9.5) |
|
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Cypress Semiconductor |
IC SRAM 16M PARALLEL 48VFBGA |
2,610 |
|
MoBL® | Volatile | SRAM | SRAM - Asynchronous | 16Mb (2M x 8, 1M x 16) | Parallel | - | 70ns | 70ns | 2.2V ~ 3.6V | -40°C ~ 85°C (TA) | Surface Mount | 48-VFBGA | 48-VFBGA (8x9.5) |