晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 103/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ON Semiconductor |
MOSFET N-CH 75V 120A D2PAK |
15,612 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 3.1mOhm @ 75A, 10V | 4.5V @ 250µA | 220nC @ 10V | ±20V | 15160pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 500V 12A TO-220 |
22,152 |
|
MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 100µA | 27nC @ 10V | ±25V | 816pF @ 50V | - | 90W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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|
IXYS |
MOSFET N-CH 300V 36A TO-263 |
8,262 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 300V | 36A (Tc) | 10V | 110mOhm @ 18A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±30V | 2250pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
19,128 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 580mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 2100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 100V 35A TO-220FP |
14,400 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 24mOhm @ 16A, 10V | 4.5V @ 250µA | 19nC @ 10V | 20V | 1270pF @ 50V | - | 25W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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|
Infineon Technologies |
MOSFET N-CH 60V 45A TO263-7 |
220,374 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 45A (Ta), 180A (Tc) | 6V, 10V | 1mOhm @ 100A, 10V | 4V @ 280µA | 208nC @ 10V | ±20V | 15000pF @ 30V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
STMicroelectronics |
MOSFET N-CH 800V 6.5A TO-220FP |
19,188 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 6.5A (Tc) | 10V | 1.05Ohm @ 3.25A, 10V | 5V @ 250µA | 18nC @ 10V | ±30V | 620pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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|
ON Semiconductor |
MOSFET N-CH 300V 59A TO-3P |
22,104 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 300V | 59A (Tc) | 10V | 56mOhm @ 29.5A, 10V | 5V @ 250µA | 100nC @ 10V | ±30V | 4670pF @ 25V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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|
Infineon Technologies |
MOSFET N-CH 650V 16A TO220-3 |
10,404 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 16A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 43nC @ 10V | ±20V | 1520pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 300V 60A TO247 |
21,720 |
|
- | N-Channel | MOSFET (Metal Oxide) | 300V | 60A (Tc) | 10V | 56mOhm @ 30A, 10V | 4.1V @ 250µA | 106nC @ 10V | ±30V | 5330pF @ 25V | - | 658W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 29A HSOF-8 |
21,252 |
|
CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 29A (Tc) | 10V | 80mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1640pF @ 400V | - | 167W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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STMicroelectronics |
MOSFET N-CH 75V 180A H2PAK |
18,600 |
|
STripFET™ III | N-Channel | MOSFET (Metal Oxide) | 75V | 180A (Tc) | 10V | 3mOhm @ 90A, 10V | 4V @ 250µA | 87nC @ 10V | ±20V | 6800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK-6 | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies |
MOSFET N CH 40V 195A TO247 |
15,066 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.3mOhm @ 100A, 10V | 3.9V @ 250µA | 460nC @ 10V | ±20V | 14240pF @ 25V | - | 366W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 75V 90A TO-247AC |
20,412 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 4.5mOhm @ 90A, 10V | 4V @ 250µA | 270nC @ 10V | ±20V | 7500pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 250V 46A TO-220AB |
20,796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 46A (Tc) | 10V | 46mOhm @ 26A, 10V | 5V @ 250µA | 110nC @ 10V | ±30V | 4560pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 14A TO-220FP |
17,688 |
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SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 6A, 10V | 4.5V @ 100µA | 92nC @ 10V | ±30V | 2000pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 30A TO220FM |
15,114 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 30A (Tc) | 10V | 130mOhm @ 14.5A, 10V | 5V @ 1mA | 56nC @ 10V | ±20V | 2350pF @ 25V | - | 86W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 30V 80A TO-220 |
21,156 |
|
STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5500pF @ 25V | - | 300W (Tc) | 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 500V 24A TO-3PN |
6,756 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 24A (Tc) | 10V | 190mOhm @ 12A, 10V | 5V @ 250µA | 85nC @ 10V | ±30V | 4150pF @ 25V | - | 270W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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Nexperia |
MOSFET N-CH 100V TO220AB |
30,336 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tj) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 278nC @ 10V | ±20V | 14400pF @ 50V | - | 405W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 55V 74A TO220AB |
23,772 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 800V 9A TO-220 |
13,356 |
|
SuperMESH™ | N-Channel | MOSFET (Metal Oxide) | 800V | 9A (Tc) | 10V | 900mOhm @ 4.5A, 10V | 4.5V @ 100µA | 72nC @ 10V | ±30V | 2180pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 200V 76A TO-220AB |
10,680 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 76A (Tc) | 10V | 20mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Cree/Wolfspeed |
MOSFET N-CH 900V 11A |
16,776 |
|
C3M™ | N-Channel | SiCFET (Silicon Carbide) | 900V | 11A (Tc) | 15V | 360mOhm @ 7.5A, 15V | 3.5V @ 1.2mA | 9.5nC @ 15V | +18V, -8V | 150pF @ 600V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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STMicroelectronics |
MOSFET N-CH 200V 40A TO-220 |
17,808 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 40A (Tc) | 10V | 45mOhm @ 20A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 2500pF @ 25V | - | 160W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 10A TO-220FP |
8,832 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Tc) | 10V | 450mOhm @ 5A, 10V | 5V @ 250µA | 30nC @ 10V | ±25V | 850pF @ 50V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 150V 130A TO-220-3 |
15,246 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 130A (Tc) | 10V | 7.5mOhm @ 100A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 7350pF @ 75V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 100V 120A TO-247AC |
28,752 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4.5mOhm @ 75A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 9620pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Rohm Semiconductor |
1700V 1.2 OHM 4A SIC FET |
16,914 |
|
- | N-Channel | SiCFET (Silicon Carbide) | 1700V | 4A (Tc) | 18V | 1.5Ohm @ 1.1A, 18V | 4V @ 410µA | 14nC @ 18V | +22V, -6V | 184pF @ 800V | - | 44W (Tc) | 175°C (TJ) | Surface Mount | TO-268 | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
|
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
62,322 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 4200pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |