晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 143/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 75V 120A TO220 |
12,228 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 120A (Tc) | 10V | 2.3mOhm @ 100A, 10V | 3.8V @ 273µA | 206nC @ 10V | ±20V | 14400pF @ 37.5V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 22A TO220-3 |
11,004 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 22A (Tc) | 10V | 99mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 600V 21A |
20,820 |
|
MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 160mOhm @ 10.5A, 10V | 5V @ 250µA | 34nC @ 10V | ±25V | 1500pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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|
ON Semiconductor |
MOSFET N-CH 100V 80A TO-247 |
106,176 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 80A (Tc) | 6V, 10V | 9mOhm @ 80A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 6000pF @ 25V | - | 310W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
15,168 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 6V, 10V | 2mOhm @ 100A, 10V | 3.8V @ 280µA | 223nC @ 10V | ±20V | 16900pF @ 40V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 600V 20A TO-220 |
12,312 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 163mOhm @ 10A, 10V | 4.75V @ 250µA | 33nC @ 10V | ±25V | 1320pF @ 100V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
|
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ON Semiconductor |
MOSFET N-CH 1700V 2.5A |
6,204 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1700V | 2.5A (Tc) | 10V | 10.5Ohm @ 1.5A, 10V | - | 48nC @ 10V | ±30V | 850pF @ 30V | - | 3W (Ta), 55W (Tc) | 150°C (TJ) | Through Hole | TO-3PF | TO-3P-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 150V 100A TO220-3 |
13,602 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 100A (Tc) | 8V, 10V | 7.5mOhm @ 100A, 10V | 4V @ 270µA | 93nC @ 10V | ±20V | 5470pF @ 75V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
|
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|
Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
12,810 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 37.9A (Tc) | 10V | 99mOhm @ 14.5A, 10V | 4.5V @ 1.21mA | 70nC @ 10V | ±20V | 3330pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 39A TO247 |
14,568 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 39A (Tc) | 10V | 99mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
|
Infineon Technologies |
MOSFET N-CH 120V 120A TO220-3 |
17,124 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 120V | 120A (Tc) | 10V | 4.1mOhm @ 100A, 10V | 4V @ 270µA | 211nC @ 10V | ±20V | 13800pF @ 60V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
20,316 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 145mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2740pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 60V 195A TO262 |
33,948 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 800V 17A TO-247 |
7,584 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 290mOhm @ 11A, 10V | 3.9V @ 1mA | 177nC @ 10V | ±20V | 2320pF @ 25V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 60V 257A TO247 |
19,692 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 195A (Tc) | 10V | 2.5mOhm @ 170A, 10V | 4V @ 250µA | 300nC @ 10V | ±20V | 8970pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 650V 24A D2PAK |
40,734 |
|
E | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 156mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | ±30V | 2774pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 500V 16A TO-220AB |
27,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 320mOhm @ 9.9A, 10V | 5V @ 250µA | 130nC @ 10V | ±30V | 2760pF @ 25V | - | 220W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 900V 15A TO220-3 |
24,666 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 15A (Tc) | 10V | 340mOhm @ 9.2A, 10V | 3.5V @ 1mA | 94nC @ 10V | ±20V | 2400pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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Microsemi |
MOSFET N-CH 1000V 8A TO-247 |
6,684 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 8A (Tc) | 10V | 1.8Ohm @ 4A, 10V | 5V @ 1mA | 60nC @ 10V | ±30V | 1885pF @ 25V | - | 290W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
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STMicroelectronics |
MOSFET N-CH 600V 34A |
17,112 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 34A (Tc) | 10V | 93mOhm @ 17A, 10V | 5V @ 250µA | 56nC @ 10V | ±25V | 2500pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-220AB |
16,518 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 29A TO220 |
17,736 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 29A (Tc) | 10V | 125mOhm @ 15A, 10V | 4V @ 250µA | 130nC @ 10V | ±30V | 2600pF @ 100V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-220-3 Full Pack |
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|
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Vishay Siliconix |
MOSFET N-CH 600V 33A TO-263 |
61,878 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 33A (Tc) | 10V | 99mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | ±30V | 3508pF @ 100V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 500V 48A TO-3P |
8,304 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 48A (Tc) | 10V | 105mOhm @ 24A, 10V | 5V @ 250µA | 137nC @ 10V | ±20V | 6460pF @ 25V | - | 625W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 80V 89A TO220-3 |
14,700 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 89A (Tc) | 6V, 10V | 2.8mOhm @ 89A, 10V | 3.5V @ 270µA | 206nC @ 10V | ±20V | 14200pF @ 40V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 600V 37A TO247-3 |
7,908 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 80mOhm @ 11.8A, 10V | 4V @ 590µA | 51nC @ 10V | ±20V | 2180pF @ 400V | - | 129W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
|
|
|
ON Semiconductor |
MOSFET N-CH 250V 55A TO-3P |
16,056 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 55A (Tc) | 10V | 40mOhm @ 27.5A, 10V | 5V @ 250µA | 180nC @ 10V | ±30V | 6250pF @ 25V | - | 310W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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|
IXYS |
MOSFET N-CH 1000V 6A TO247 |
7,764 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 6A (Tc) | - | 2.2Ohm @ 3A, 0V | - | 95nC @ 5V | ±20V | 2650pF @ 25V | Depletion Mode | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
|
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Vishay Siliconix |
MOSFET N-CH 500V 31A TO-247AC |
9,720 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 31A (Tc) | 10V | 180mOhm @ 19A, 10V | 5V @ 250µA | 210nC @ 10V | ±30V | 5000pF @ 25V | - | 460W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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|
IXYS |
MOSFET N-CH 250V 60A TO263AA |
8,766 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 250V | 60A (Tc) | 10V | 23mOhm @ 30A, 10V | 4.5V @ 1.5mA | 50nC @ 10V | ±20V | 3610pF @ 25V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263AA | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |