晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 297/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
N-CHANNEL 600 V, 0.032 OHM TYP., |
7,704 |
|
MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
|
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|
STMicroelectronics |
N-CHANNEL 600 V, 0.037OHM TYP., |
8,568 |
|
MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 62A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 | TO-247-3 |
|
|
|
STMicroelectronics |
N-CHANNEL 600 V, 0.037 OHM TYP., |
6,102 |
|
MDmesh™ DM6 | N-Channel | MOSFET (Metal Oxide) | 600V | 62A | - | - | - | - | - | - | - | - | - | Through Hole | TO-247 Long Leads | TO-247-3 |
|
|
|
STMicroelectronics |
N-CHANNEL 600 V 32 MOHM TYP. 72 |
8,712 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106nC @ 10V | ±25V | 4850pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
|
|
|
STMicroelectronics |
N-CHANNEL 600 V 32 MOHM TYP. 72 |
6,540 |
|
MDmesh™ M6 | N-Channel | MOSFET (Metal Oxide) | 600V | 72A (Tc) | 10V | 36mOhm @ 36A, 10V | 4.75V @ 250µA | 106nC @ 10V | ±25V | 4850pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
|
|
|
Microsemi |
MOSFET N-CH 600V 34A TO-247 |
6,678 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 36A (Tc) | 10V | 210mOhm @ 17A, 10V | 5V @ 1mA | 165nC @ 10V | ±30V | 6640pF @ 25V | - | 624W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1000V 37A T-MAX |
452 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 37A (Tc) | 10V | 330mOhm @ 18A, 10V | 5V @ 2.5mA | 305nC @ 10V | ±30V | 9835pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | T-MAX™ [B2] | TO-247-3 Variant |
|
|
|
Microsemi |
MOSFET N-CH 1000V 14A TO-247 |
4,032 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 1000V | 14A (Tc) | 10V | 780mOhm @ 7A, 10V | 5V @ 1mA | 95nC @ 10V | ±30V | 2525pF @ 25V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 [B] | TO-247-3 |
|
|
|
Microsemi |
MOSFET N-CH 1200V 29A TO264 |
5,958 |
|
POWER MOS 8™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 29A (Tc) | 10V | 530mOhm @ 14A, 10V | 5V @ 2.5mA | 300nC @ 10V | ±30V | 9670pF @ 25V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
|
|
|
Microsemi |
MOSFET N-CH 600V 94A TO264 |
6,606 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 94A (Tc) | 10V | 35mOhm @ 60A, 10V | 3.9V @ 5.4mA | 640nC @ 10V | ±20V | 13600pF @ 25V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | 264 MAX™ [L2] | TO-264-3, TO-264AA |
|
|
|
Microsemi |
MOSFET N-CH 500V 41A SOT-227 |
7,938 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 41A (Tc) | 10V | 100mOhm @ 23A, 10V | 5V @ 2.5mA | 96nC @ 10V | ±30V | 4360pF @ 25V | - | 378W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
|
|
|
IXYS-RF |
MOSFET N-CH 500V 55A SOT227B |
223 |
|
HiPerRF™ | N-Channel | MOSFET (Metal Oxide) | 500V | 55A (Tc) | 10V | 85mOhm @ 27.5A, 10V | 5.5V @ 8mA | 195nC @ 10V | ±20V | 6700pF @ 25V | - | 600W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
|
|
|
Microsemi |
MOSFET N-CH 800V 33A SOT-227 |
5,166 |
|
POWER MOS 7® | N-Channel | MOSFET (Metal Oxide) | 800V | 33A (Tc) | 10V | 200mOhm @ 16.5A, 10V | 5V @ 2.5mA | 195nC @ 10V | ±30V | 5200pF @ 25V | - | 520W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | SOT-227-4, miniBLOC |
|
|
|
GeneSiC Semiconductor |
TRANS SJT 100V 9A |
6,156 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 100V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
|
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|
GeneSiC Semiconductor |
TRANS SJT 300V 9A |
4,752 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 300V | 9A (Tc) | - | 240mOhm @ 5A | - | - | - | - | - | 20W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-46 | TO-46-3 |
|
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|
Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
8,016 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 4.5A (Tc) | 10V | 1.2Ohm @ 900mA, 10V | 3.5V @ 40µA | 4.8nC @ 400V | ±16V | 174pF @ 400V | - | 25W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET TO251-3 |
9,936 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 3A | 10V | 2Ohm @ 500mA, 10V | 3.5V @ 30µA | 3.8nC @ 400V | ±16V | 130pF @ 400V | - | 17.6W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-347 | TO-251-3 Stub Leads, IPak |
|
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|
Texas Instruments |
MOSFET N-CHANNEL 60V 50A 8VSON |
15,924 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Ta) | 4.5V, 10V | 9.8mOhm @ 14A, 10V | 2.3V @ 250µA | 11.1nC @ 4.5V | ±20V | 1770pF @ 30V | - | 3.1W (Ta), 77W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
7,740 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 400V | ±16V | 211pF @ 400V | - | 20.5W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Toshiba Semiconductor and Storage |
PB-F POWER MOSFET TRANSISTOR TO- |
8,304 |
|
U-MOSIX | N-Channel | MOSFET (Metal Oxide) | 600V | 3.7A (Ta) | 10V | 1.9Ohm @ 1.9A, 10V | 4V @ 400µA | 14nC @ 10V | ±30V | 490pF @ 300V | - | 30W (Tc) | 150°C | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 450V 1.8A IPAK |
20,172 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 450V | 1.8A (Tc) | 10V | 3.8Ohm @ 500mA, 10V | 4.5V @ 50µA | 6nC @ 10V | ±30V | 150pF @ 25V | - | 27W (Tc) | - | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
8,400 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 10V | ±16V | 306pF @ 400V | - | 20.8W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET N-CH TO220-3 |
10,200 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6.5A (Tc) | 10V | 750mOhm @ 1.4A, 10V | 3.5V @ 70µA | 8.3nC @ 400V | ±16V | 306pF @ 400V | - | 21.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 525V 4.4A TO-220FP |
16,896 |
|
SuperMESH3™ | N-Channel | MOSFET (Metal Oxide) | 525V | 4.4A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4.5V @ 50µA | 17nC @ 10V | ±30V | 545pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
Infineon Technologies |
MOSFET COOLMOS 700V TO251-3 |
11,280 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 700V | 6A (Tc) | 10V | 900mOhm @ 1.1A, 10V | 3.5V @ 60µA | 6.8nC @ 10V | ±16V | 211pF @ 400V | - | 17.9W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET P-CH 60V 10A IPAK |
14,412 |
|
STripFET™ II | P-Channel | MOSFET (Metal Oxide) | 60V | 10A (Tc) | 10V | 200mOhm @ 5A, 10V | 4V @ 250µA | 21nC @ 10V | ±20V | 850pF @ 25V | - | 40W (Tc) | 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
ON Semiconductor |
MOSFET N-CH 100V 43.5A D2PAK |
17,700 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 43.5A (Tc) | 10V | 39mOhm @ 21.75A, 10V | 4V @ 250µA | 62nC @ 10V | ±25V | 1800pF @ 25V | - | 3.75W (Ta), 146W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
ON Semiconductor |
MOSFET P-CH 60V 11.4A TO-220 |
16,884 |
|
QFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 11.4A (Tc) | 10V | 175mOhm @ 5.7A, 10V | 4V @ 250µA | 17nC @ 10V | ±25V | 550pF @ 25V | - | 53W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
|
|
Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
6,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
ON Semiconductor |
MOSFET N-CH 200V 3.8A TO-220 |
10,392 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.8A (Tc) | 5V, 10V | 1.35Ohm @ 1.9A, 10V | 2V @ 250µA | 5.2nC @ 5V | ±20V | 310pF @ 25V | - | 45W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |