晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 340/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 250V 25A TO263-3 |
3,528 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 250V | 25A (Tc) | 10V | 60mOhm @ 25A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET NCH 650V 36A PG-HDSOP-10 |
6,426 |
|
CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 190mOhm @ 4.2A, 10V | 4V @ 210µA | 18nC @ 10V | ±20V | 718pF @ 400V | - | 76W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HDSOP-10-1 | 10-PowerSOP Module |
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Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3 |
4,068 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 3800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Infineon Technologies |
MOSFET N-CH 100V 120A D2PAK |
2,736 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 6mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | ±20V | 6860pF @ 50V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 650V 20A HSOF-8 |
4,932 |
|
CoolMOS™ G7 | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 125mOhm @ 6.4A, 10V | 4V @ 320µA | 27nC @ 10V | ±20V | 1080pF @ 400V | - | 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-HSOF-8-2 | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 100V 300A 8HSOF |
2,196 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 300A (Tc) | 6V, 10V | 2mOhm @ 150A, 10V | 3.5V @ 272µA | 156nC @ 10V | ±20V | 11200pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-HSOF-8-1 | 8-PowerSFN |
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EPC |
GANFET TRANS 200V 48A BUMPED DIE |
4,770 |
|
eGaN® | N-Channel | GaNFET (Gallium Nitride) | 200V | 48A (Ta) | 5V | 10mOhm @ 20A, 5V | 2.5V @ 7mA | 8.8nC @ 5V | +6V, -4V | 950pF @ 100V | - | - | -40°C ~ 140°C (TJ) | Surface Mount | Die | Die |
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STMicroelectronics |
MOSFET P-CH 60V 35A DPAK |
8,370 |
|
STripFET™ F6 | P-Channel | MOSFET (Metal Oxide) | 60V | 35A (Tc) | 4.5V, 10V | 28mOhm @ 17.5A, 10V | 2.5V @ 250µA | 30nC @ 4.5V | ±20V | 3780pF @ 25V | - | 70W (Tc) | 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 600V 5A POWERFLAT |
3,726 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Tc) | 10V | 1.05Ohm @ 2A, 10V | 4V @ 250µA | 8.8nC @ 10V | ±25V | 271pF @ 100V | - | 4W (Ta), 67W (Tc) | 150°C (TJ) | Surface Mount | PowerFLAT™ (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 100V 80A DPAK |
6,174 |
|
Automotive, AEC-Q101, STripFET™ F7 | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 10V | 8mOhm @ 40A, 10V | 4.5V @ 250µA | 61nC @ 10V | ±20V | 4369pF @ 50V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 650V 9A POWERFLAT |
5,922 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 8.5A (Tc) | 10V | 530mOhm @ 4.25A, 10V | 5V @ 250µA | 17nC @ 10V | ±25V | 644pF @ 100V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerFLAT™ (5x5) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 80V POWERFLAT5X6 |
4,572 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 80V | 130A (Tc) | 10V | 3.6mOhm @ 13A, 10V | 4.5V @ 250µA | 96nC @ 10V | ±20V | 6340pF @ 40V | - | 135W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerFlat™ (5x6) | 8-PowerVDFN |
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STMicroelectronics |
MOSFET N-CH 800V 17A D2PAK |
6,318 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 295mOhm @ 8.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 2070pF @ 50V | - | 190W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 600V 28A |
4,446 |
|
Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 600V | 28A (Tc) | 10V | 110mOhm @ 14A, 10V | 5V @ 250µA | 54nC @ 10V | ±25V | 2400pF @ 100V | - | 210W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 1200V 12A H2PAK-2 |
6,048 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 1200V | 12A (Tc) | 10V | 690mOhm @ 6A, 10V | 5V @ 100µA | 44.2nC @ 10V | ±30V | 1370pF @ 100V | - | 250W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 650V 45A TO-247 |
7,344 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 45A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | ±30V | 3800pF @ 25V | - | 417W (Tc) | 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 0.110 OHM TYP., |
2,358 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 40A (Tc) | 10V | 99mOhm @ 20A, 10V | 5V @ 100µA | 89nC @ 10V | ±30V | 3260pF @ 100V | - | 446W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 130A MAX247 |
2,376 |
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MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 130A (Tc) | 10V | 17mOhm @ 65A, 10V | 5V @ 250µA | 363nC @ 10V | ±25V | 15600pF @ 100V | - | 625W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 650V 138A MAX247 |
3,086 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 138A (Tc) | 10V | 15mOhm @ 69A, 10V | 5V @ 250µA | 414nC @ 10V | ±25V | 18500pF @ 100V | - | 625W (Tc) | 150°C (TJ) | Through Hole | MAX247™ | TO-247-3 |
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Diodes Incorporated |
MOSFET N-CH 50V 160MA SOT-523 |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 160mA (Ta) | 2.5V, 4V | 4Ohm @ 100mA, 4V | 1V @ 250µA | - | ±12V | 25pF @ 10V | - | 200mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-523 | SOT-523 |
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Diodes Incorporated |
MOSFET N-CH 60V 1.6A SOT-23 |
7,902 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 1.6A (Ta) | 4.5V, 10V | 140mOhm @ 1.8A, 10V | 3V @ 250µA | 8.6nC @ 10V | ±20V | 315pF @ 40V | - | 700mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 30V 4.8A SOT-23 |
2,826 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4.8A (Tc) | 2.5V, 10V | 45mOhm @ 3.7A, 10V | 1.5V @ 250µA | 35nC @ 10V | ±12V | - | - | 1W (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 20V 6.5A SOT23 |
7,776 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 6.5A (Ta) | 1.8V, 4.5V | 22mOhm @ 6.5A, 4.5V | 1V @ 250µA | 16nC @ 4.5V | ±8V | 1160pF @ 10V | - | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 3.5A SOT-23F |
3,870 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 3.5A (Ta) | 4V, 10V | 134mOhm @ 1A, 10V | 2V @ 1mA | 15.1nC @ 10V | +10V, -20V | 660pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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STMicroelectronics |
MOSFET P-CH 30V 2A SOT-23 |
2,502 |
|
STripFET™ H6 | P-Channel | MOSFET (Metal Oxide) | 30V | 2A (Ta) | 4.5V, 10V | 56mOhm @ 1A, 10V | 2.5V @ 250µA | 6nC @ 4.5V | ±20V | 639pF @ 25V | - | 350mW (Tc) | 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 8V 5.8A SOT23-3 |
8,298 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 8V | 5.8A (Tc) | 1.8V, 4.5V | 35mOhm @ 4.4A, 4.5V | 1V @ 250µA | 30nC @ 8V | ±8V | 960pF @ 4V | - | 960mW (Ta), 1.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
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Vishay Siliconix |
MOSFET P-CH 20V 1.4A SC70 |
7,812 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Tc) | 1.8V, 4.5V | 150mOhm @ 1.4A, 4.5V | 800mV @ 250µA | 6.5nC @ 4.5V | ±8V | 272pF @ 10V | - | 500mW (Tc) | -50°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 30V 10A 6UDFN |
7,128 |
|
U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4V, 10V | 20mOhm @ 4A, 10V | 2.2V @ 250µA | 20.4nC @ 4.5V | +20V, -25V | 1150pF @ 15V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Vishay Siliconix |
MOSFET N-CH 20V MICROFOOT |
5,670 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | 1.5V, 4.5V | 80mOhm @ 1A, 4.5V | 1V @ 250µA | 8.3nC @ 8V | ±8V | - | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 4-Microfoot | 4-XFBGA, CSPBGA |
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ON Semiconductor |
MOSFET P-CH 20V 4.5A SSOT-6 |
3,906 |
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PowerTrench® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.5A (Ta) | 2.5V, 4.5V | 43mOhm @ 4.5A, 4.5V | 1.5V @ 250µA | 12nC @ 4.5V | ±12V | 1000pF @ 10V | - | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT™-6 | SOT-23-6 Thin, TSOT-23-6 |