晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 356/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 150V 128A D2PAK |
6,984 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 128A (Tc) | 7.5V, 10V | 9mOhm @ 30A, 10V | 5V @ 250µA | 95nC @ 10V | ±20V | 3425pF @ 75V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 80V 80A TO220-3 |
5,004 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 80A (Tc) | 6V, 10V | 5.7mOhm @ 80A, 10V | 3.5V @ 90µA | 69nC @ 10V | ±20V | 4750pF @ 40V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 22.4A TO-263 |
4,878 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 150mOhm @ 9.3A, 10V | 4.5V @ 900µA | 86nC @ 10V | ±20V | 2340pF @ 100V | - | 195.3W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2 |
2,502 |
|
Automotive, AEC-Q101, STripFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 1.7Ohm @ 45A, 10V | 4V @ 250µA | 115nC @ 10V | ±20V | 7380pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 72A TO-220 |
2,376 |
|
U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 72A (Ta) | 10V | 4.3mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5500pF @ 40V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH 55V 110A TO-263 |
7,326 |
|
TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 6.6mOhm @ 25A, 10V | 4V @ 250µA | 57nC @ 10V | ±20V | 3060pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 600V 13.8A TO220 |
5,022 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 6.5A, 10V | 3.5V @ 430µA | 43nC @ 10V | ±20V | 950pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 24A TO220 |
6,210 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 24A (Ta), 100A (Tc) | 6V, 10V | 2.9mOhm @ 100A, 10V | 2.8V @ 75µA | 56nC @ 10V | ±20V | 4100pF @ 30V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 300A PSOF8 |
2,520 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 300A (Tc) | 10V | 0.65mOhm @ 80A, 10V | 4V @ 250µA | 296nC @ 10V | ±20V | 15900pF @ 25V | - | 429W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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STMicroelectronics |
MOSFET N CH 650V 9A TO-220FP |
7,236 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 9A (Tc) | 10V | 480mOhm @ 4.5A, 10V | 5V @ 250µA | 17nC @ 10V | ±25V | 644pF @ 100V | - | 25W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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STMicroelectronics |
MOSFET N-CH 800V 4.5A TO-220AB |
4,986 |
|
SuperMESH5™ | N-Channel | MOSFET (Metal Oxide) | 800V | 4.5A (Tc) | 10V | 1.6Ohm @ 2A, 10V | 5V @ 100µA | 7.5nC @ 10V | 30V | 255pF @ 100V | - | 85W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Rohm Semiconductor |
MOSFET N-CH 250V 12A TO-220FM |
6,900 |
|
- | N-Channel | MOSFET (Metal Oxide) | 250V | 12A (Ta) | 10V | - | - | - | ±30V | - | - | 2.23W (Ta), 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 13A TO220 |
4,968 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13.8A TO220 |
7,128 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 13.8A (Tc) | 10V | 280mOhm @ 4.4A, 10V | 3.5V @ 440µA | 45nC @ 10V | ±20V | 950pF @ 100V | - | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
6,030 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 63A TO220AB |
5,850 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 63A (Tc) | 7.5V, 10V | - | 4V @ 250µA | 88nC @ 10V | ±20V | - | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 1000V 3A TO220AB |
8,064 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 3A (Tc) | - | 5.5Ohm @ 1.5A, 0V | - | 37.5nC @ 5V | ±20V | 1020pF @ 25V | Depletion Mode | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 17A TO220FP |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 10V | 77mOhm @ 10A, 10V | 4V @ 250µA | 72nC @ 10V | ±20V | 1700pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 800V COOLMOS TO220-3 |
3,708 |
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CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 17A (Tc) | 10V | 280mOhm @ 7.2A, 10V | 3.5V @ 360µA | 36nC @ 10V | ±20V | 1200pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 80V 75A TO-220AB |
8,730 |
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UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 75A (Tc) | 10V | 10mOhm @ 75A, 10V | 4V @ 250µA | 235nC @ 20V | ±20V | 3750pF @ 25V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 8A TO220 |
4,914 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 650V 13A TO220 |
2,682 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 650V | 13A (Tc) | 10V | 190mOhm @ 5.7A, 10V | 4V @ 290µA | 23nC @ 10V | ±20V | 1150pF @ 400V | - | 72W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 150V 128A TO220AB |
4,158 |
|
ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 128A (Tc) | 7.5V, 10V | 9.4mOhm @ 30A, 10V | 5V @ 250µA | 95nC @ 10V | ±20V | 3425pF @ 75V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5,850 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
|
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Infineon Technologies |
MOSFET N-CH 550V 17A TO-220 |
2,322 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 550V | 17A (Tc) | 10V | 199mOhm @ 9.9A, 10V | 3.5V @ 660µA | 45nC @ 10V | ±20V | 1800pF @ 100V | - | 139W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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STMicroelectronics |
N-CHANNEL 900 V, 2.1 OHM TYP., 3 |
7,650 |
|
MDmesh™ K5 | N-Channel | MOSFET (Metal Oxide) | 900V | 6A (Tc) | 10V | 1.1Ohm @ 3A, 10V | 5V @ 100µA | - | ±30V | - | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Rohm Semiconductor |
MOSFET N-CH 800V 10A TO220 |
6,408 |
|
- | N-Channel | MOSFET (Metal Oxide) | 800V | 10A (Tc) | 10V | 560mOhm @ 5A, 10V | 5V @ 1mA | 62nC @ 10V | ±30V | 1750pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
6,102 |
|
HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 80V 120A TO-220-3 |
7,722 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.7mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | ±20V | 13530pF @ 40V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
7,614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |