晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 384/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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STMicroelectronics |
MOSFET N-CHANNEL 600V 18A TO247 |
2,448 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 188mOhm @ 9A, 10V | 4.75V @ 250µA | 29nC @ 10V | ±25V | 1090pF @ 100V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 600V 20A TO247 |
3,510 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 165mOhm @ 10A, 10V | 4V @ 250µA | 34nC @ 10V | ±25V | 1360pF @ 100V | - | 169W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXFH) | TO-247-3 |
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Infineon Technologies |
MOSFET N-CHANNEL 800V 13A TO220 |
5,868 |
|
CoolMOS™ P7 | N-Channel | MOSFET (Metal Oxide) | 800V | 13A (Tc) | 10V | 360mOhm @ 5.6A, 10V | 3.5V @ 280µA | 30nC @ 10V | ±20V | 930pF @ 500V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 6.8A TO-220F |
6,804 |
|
SupreMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 520mOhm @ 3.4A, 10V | 4V @ 250µA | 35.6nC @ 10V | ±30V | 960pF @ 100V | - | 30.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 13A TO-247 |
3,544 |
|
Automotive, AEC-Q101, MDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 13A (Tc) | 10V | 285mOhm @ 6.5A, 10V | 4V @ 250µA | 35nC @ 10V | ±25V | 1000pF @ 50V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
|
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|
Vishay Siliconix |
MOSFET N-CH PPAK 8X8 |
5,616 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 180mOhm @ 9.5A, 10V | 5V @ 250µA | 33nC @ 10V | ±30V | 1085pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
|
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Vishay Siliconix |
MOSFET N-CH EF PWR PWRPAK 8X8 |
8,514 |
|
EF | N-Channel | MOSFET (Metal Oxide) | 600V | 16A (Tc) | 10V | 193mOhm @ 9.5A, 10V | 5V @ 250µA | 32nC @ 10V | ±30V | 1081pF @ 100V | - | 114W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 8 x 8 | 8-PowerTDFN |
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
7,722 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 4V @ 430µA | 40nC @ 10V | ±20V | 910pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Rohm Semiconductor |
NCH 650V 15A POWER MOSFET. R651 |
2,304 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 315mOhm @ 6.5A, 10V | 5V @ 430µA | 27.5nC @ 10V | ±20V | 1050pF @ 25V | - | 184W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
STMicroelectronics |
MOSFET |
2,376 |
|
MDmesh™ M2-EP | N-Channel | MOSFET (Metal Oxide) | 600V | - | - | - | - | - | - | - | - | - | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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ON Semiconductor |
AFSM T6 40V LL NCH |
3,978 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 553.8A (Tc) | 4.5V, 10V | 0.4mOhm @ 50A, 10V | 2.5V @ 250µA | 163nC @ 4.5V | ±20V | 20600pF @ 20V | - | 5W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
|
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STMicroelectronics |
MOSFET N-CH 33V 120A TO-220 |
3,060 |
|
SAFeFET™ | N-Channel | MOSFET (Metal Oxide) | 33V | 120A (Tc) | 10V | 4.2mOhm @ 40A, 10V | 4V @ 1mA | 110nC @ 10V | ±20V | 4560pF @ 25V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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STMicroelectronics |
MOSFET N-CH 100V 180A H2PAK-2 |
5,652 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 2.5mOhm @ 60A, 10V | 4.5V @ 250µA | 160nC @ 10V | ±20V | 11550pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | H2Pak-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 100V TO-220FP |
4,050 |
|
DeepGATE™, STripFET™ VII | N-Channel | MOSFET (Metal Oxide) | 100V | 45A (Tc) | 10V | 7mOhm @ 22.5A, 10V | 4.5V @ 250µA | 72nC @ 10V | ±20V | 5117pF @ 50V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
60V N-CHANNEL ALPHASGT TM |
4,806 |
|
AlphaSGT™ | N-Channel | MOSFET (Metal Oxide) | 60V | 38.5A (Ta), 140A (Tc) | 6V, 10V | 3.2mOhm @ 20A, 10V | 3.4V @ 250µA | 60nC @ 10V | ±20V | 2870pF @ 30V | - | 8.3W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 47A 8PQFN |
4,068 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 47A (Ta), 200A (Tc) | 4.5V, 10V | 0.85mOhm @ 47A, 10V | 3V @ 250µA | 242nC @ 10V | ±20V | 17500pF @ 20V | - | 2.7W (Ta), 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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STMicroelectronics |
MOSFET N-CH 650V 29A TO-220FP |
7,416 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 650V | 28A (Tc) | 10V | 110mOhm @ 14.5A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 2590pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
STMicroelectronics |
MOSFET N-CH 650V TO-220FP |
6,498 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
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ON Semiconductor |
FET NCH 650V |
7,578 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A | 10V | 150mOhm @ 12A, 10V | 5V @ 540µA | 43nC @ 10V | ±30V | 1999pF @ 400V | - | 192W | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK-3 (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
STMicroelectronics |
MOSFET N-CH 600V 18A TO-3PF |
5,022 |
|
MDmesh™ II Plus | N-Channel | MOSFET (Metal Oxide) | 600V | 18A (Tc) | 10V | 190mOhm @ 9A, 10V | 4V @ 250µA | 29nC @ 10V | ±25V | 1060pF @ 100V | - | 48W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | TO-3PF |
|
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STMicroelectronics |
MOSFET N-CH 600V 12A TO-220AB |
5,670 |
|
MDmesh™ M2 | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 320mOhm @ 6A, 10V | 4V @ 250µA | 19nC @ 10V | ±25V | 700pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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ON Semiconductor |
AFSM T6 40V LL NCH |
2,286 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
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ON Semiconductor |
AFSM T6 40V SG NCH |
5,094 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 40V | 51A (Ta), 430A (Tc) | 10V | 0.67mOhm @ 50A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 9281pF @ 25V | - | 3.9W (Ta), 273W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 8-DFNW (8.3x8.4) | 8-PowerTDFN |
|
|
|
Alpha & Omega Semiconductor |
MOSFET N-CH 600V TO-220 |
6,930 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-220-3 | TO-220-3 |
|
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|
STMicroelectronics |
MOSFET N-CH 600V 19.5A TO-220FP |
5,004 |
|
FDmesh™ II | N-Channel | MOSFET (Metal Oxide) | 600V | 19.5A (Tc) | 10V | 180mOhm @ 10A, 10V | 5V @ 250µA | 70nC @ 10V | ±25V | 2050pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
|
|
|
ON Semiconductor |
SUPERFET3 650V FRFET,95MO |
3,420 |
|
FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 36A (Tc) | 10V | 95mOhm @ 18A, 10V | 5V @ 860µA | 66nC @ 10V | ±30V | 2930pF @ 400V | - | 272W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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Vishay Siliconix |
MOSFET E SERIES 600V DPAK (TO-25 |
2,754 |
|
E | N-Channel | MOSFET (Metal Oxide) | 600V | 19A (Tc) | 10V | 195mOhm @ 9.5A, 10V | 5V @ 250µA | 32nC @ 10V | ±30V | 1080pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
3,942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 5V @ 630µA | 40nC @ 10V | ±20V | 1550pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
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Rohm Semiconductor |
NCH 650V 20A POWER MOSFET. R652 |
2,970 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 205mOhm @ 9.5A, 10V | 4V @ 630µA | 61nC @ 10V | ±20V | 1400pF @ 25V | - | 231W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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STMicroelectronics |
MOSFET N CH 40V 160A I2PAK |
6,678 |
|
DeepGATE™, STripFET™ VI | N-Channel | MOSFET (Metal Oxide) | 40V | 160A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 13800pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |