晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 39/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 100V 110A D2PAK |
23,526 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 110A (Tc) | 10V | 9.5mOhm @ 30A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 6700pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V 2.2A PPAK SO-8 |
122,802 |
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TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 200V | 2.2A (Ta) | 6V, 10V | 174mOhm @ 3.8A, 10V | 4V @ 250µA | 135nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 18A TO263 |
90,936 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta), 140A (Tc) | 10V | 3.2mOhm @ 20A, 10V | 4.1V @ 250µA | 126nC @ 10V | ±20V | 9550pF @ 50V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 55V 74A TO-220AB |
375,540 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 74A (Tc) | 10V | 20mOhm @ 38A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 3400pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 40V 80A D2PAK |
229,884 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 28A (Ta), 120A (Tc) | 10V | 2.5mOhm @ 80A, 10V | 4V @ 250µA | 280nC @ 10V | ±20V | 15000pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 30V 40A PPAK SO-8 |
29,124 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 3mOhm @ 20A, 10V | 3V @ 250µA | 125nC @ 10V | ±20V | 5600pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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ON Semiconductor |
MOSFET N-CH 75V 80A TO-263AB |
28,554 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 75V | 16A (Ta), 80A (Tc) | 6V, 10V | 6mOhm @ 80A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 5150pF @ 25V | - | 255W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO263-3 |
22,338 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.5mOhm @ 100A, 10V | 4V @ 200µA | 250nC @ 10V | ±20V | 20000pF @ 20V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 72A D2PAK |
119,316 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 72A (Tc) | 10V | 22mOhm @ 44A, 10V | 5V @ 250µA | 150nC @ 10V | ±20V | 5380pF @ 50V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Texas Instruments |
MOSFET N-CH 100V 200A TO263 |
16,488 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 200A (Ta) | 6V, 10V | 3.4mOhm @ 100A, 10V | 3.4V @ 250µA | 98nC @ 10V | ±20V | 7930pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Vishay Siliconix |
MOSFET N-CH 60V 120A TO263 |
35,268 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 3.5mOhm @ 29A, 10V | 2.5V @ 250µA | 330nC @ 10V | ±20V | 14700pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 68V 98A TO-220AB |
12,906 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 68V | 98A (Tc) | 10V | 9.8mOhm @ 40A, 10V | 4V @ 250µA | 75nC @ 10V | ±20V | 2550pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 60V 289A SO-8FL |
22,734 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 38A (Ta) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 80V 120A D2PAK7 |
25,758 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 120A (Tc) | 10V | 2.4mOhm @ 100A, 10V | 4.5V @ 250µA | 178nC @ 10V | ±20V | 13530pF @ 40V | - | 246W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
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ON Semiconductor |
MOSFET N-CH 80V 80A POWER56 |
250,248 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 25A (Ta), 130A (Tc) | 8V, 10V | 2.4mOhm @ 25A, 10V | 4.5V @ 250µA | 155nC @ 10V | ±20V | 10680pF @ 40V | - | 2.7W (Ta), 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO263-3 |
12,180 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 1.9mOhm @ 100A, 10V | 2.2V @ 196µA | 166nC @ 4.5V | ±20V | 28000pF @ 30V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 35A TO-220AB |
52,848 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 35A (Tc) | 10V | 39mOhm @ 21A, 10V | 5V @ 100µA | 26nC @ 10V | ±20V | 1750pF @ 50V | - | 144W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 150V 169A PSOF8 |
21,702 |
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Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 150V | 169A (Tc) | 10V | 6.3mOhm @ 80A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 5805pF @ 75V | - | 500W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Vishay Siliconix |
MOSFET N-CH 60V 50A TO-220AB |
36,732 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 10V | 28mOhm @ 31A, 10V | 4V @ 250µA | 67nC @ 10V | ±20V | 1900pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 500V 26A |
20,856 |
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Automotive, AEC-Q101, MDmesh™ DM2 | N-Channel | MOSFET (Metal Oxide) | 500V | 26A (Tc) | 10V | 120mOhm @ 12.5A, 10V | 5V @ 250µA | 44nC @ 10V | ±25V | 1850pF @ 100V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 200V 30A TO-247AC |
35,982 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 30A (Tc) | 10V | 75mOhm @ 18A, 10V | 4V @ 250µA | 123nC @ 10V | ±20V | 2159pF @ 25V | - | 214W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 90A D2PAK |
63,492 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 90A (Tc) | 10V | 8.2mOhm @ 20A, 10V | 4.5V @ 250µA | 150nC @ 10V | ±20V | 6290pF @ 50V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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STMicroelectronics |
MOSFET N-CH 300V 42A D2PAK |
14,220 |
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STripFET™ II | N-Channel | MOSFET (Metal Oxide) | 300V | 42A (Tc) | 10V | 75mOhm @ 17A, 10V | 4V @ 250µA | 90nC @ 10V | ±20V | 3200pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 100V 150A TO-220 |
86,340 |
|
SDMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Ta), 150A (Tc) | 7V, 10V | 6.5mOhm @ 20A, 10V | 4V @ 250µA | 129nC @ 10V | ±25V | 7950pF @ 50V | - | 1.9W (Ta), 333W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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STMicroelectronics |
MOSFET N-CH 200V 18A TO-220FP |
90,174 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 125mOhm @ 10A, 10V | 4V @ 250µA | 39nC @ 10V | ±20V | 940pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 900V 6.9A TO-220 |
95,382 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 6.9A (Tc) | 10V | 800mOhm @ 4.1A, 10V | 3.5V @ 460µA | 42nC @ 10V | ±20V | 1100pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 21A D2PAK |
17,874 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 165mOhm @ 12A, 10V | 3.5V @ 790µA | 52nC @ 10V | ±20V | 2000pF @ 100V | - | 192W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK |
22,590 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 4.3mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | ±16V | 11360pF @ 50V | - | 370W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Nexperia |
MOSFET N-CH 60V 100A TO220AB |
36,228 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 100A (Tc) | 10V | 3mOhm @ 25A, 10V | 4V @ 1mA | 130nC @ 10V | ±20V | 8079pF @ 30V | - | 306W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 600V 20A D2PAK |
18,468 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 98nC @ 10V | ±30V | 3080pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |