晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 471/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 2.8A TO220F |
7,182 |
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- | N-Channel | MOSFET (Metal Oxide) | 1000V | 2.8A (Tc) | 10V | 6Ohm @ 1.5A, 10V | 4.5V @ 250µA | 20nC @ 10V | ±30V | 830pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Diodes Incorporated |
MOSFET N-CH 600V 3.3A TO220AB |
3,582 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 600V | 3.3A (Tc) | 10V | 3.5Ohm @ 1.5A, 10V | 4V @ 250µA | 12.6nC @ 10V | ±30V | 354pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
3,078 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2.2V @ 250µA | 220nC @ 10V | +20V, -16V | 11700pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Infineon Technologies |
MOSFET N-CH 60V 80A TO263-3 |
3,366 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 4.5V, 10V | 5.1mOhm @ 80A, 10V | 2.2V @ 60µA | 110nC @ 10V | ±16V | 8180pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
NFET SO8FL 30V 1.15MO |
6,408 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Ta), 241A (Tc) | 4.5V, 10V | 1.15mOhm @ 30A, 10V | 2.2V @ 250µA | 82nC @ 10V | ±20V | 5780pF @ 15V | - | 3.75W (Ta), 115W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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Nexperia |
BUK9Y1R6-40H/SOT669/LFPAK |
8,172 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 40V 70A TO262-3-1 |
2,232 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Tc) | 10V | 6.5mOhm @ 70A, 10V | 4V @ 26µA | 32nC @ 10V | ±20V | 2550pF @ 25V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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|
Diodes Incorporated |
MOSFET N-CH 100V 55A TO252 |
3,096 |
|
- | N-Channel | MOSFET (Metal Oxide) | 100V | 55A (Tc) | 10V | 28mOhm @ 20A, 10V | 4V @ 250µA | 36nC @ 10V | ±20V | 2245pF @ 50V | - | 2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 40V 18A TO252 |
3,762 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta), 90A (Tc) | 10V | 6mOhm @ 86A, 10V | 4V @ 250µA | 51nC @ 10V | ±20V | 2280pF @ 25V | - | 2.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET N-CH 60V 25A PWRDI5060-8 |
5,364 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta), 100A (Tc) | 10V | 3.1mOhm @ 50A, 10V | 4V @ 250µA | 95.4nC @ 10V | ±20V | 4556pF @ 30V | - | 2.1W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PowerDI5060-8 | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 100V 40A DPAK |
2,502 |
|
Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 100V | 8.5A (Ta), 41A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 66nC @ 10V | ±20V | 3.468nF @ 25V | - | 3.9W (Ta), 90W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 500V 5A TO-220F |
3,564 |
|
UltraFRFET™, Unifet™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.5Ohm @ 2.5A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 940pF @ 25V | - | 31.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 9.3A DPAK |
6,714 |
|
DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 9.3A (Ta) | 10V | 560mOhm @ 4.6A, 10V | 3.5V @ 350µA | 20nC @ 10V | ±30V | 700pF @ 300V | - | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 75A TO-220AB |
8,190 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 75A (Tc) | 10V | 12.6mOhm @ 48A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 3270pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO252-3 |
6,066 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 6V, 10V | 3.3mOhm @ 90A, 10V | 3.3V @ 50µA | 44nC @ 10V | ±20V | 3400pF @ 30V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 25V 18.5A U8FL |
2,100 |
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- | N-Channel | MOSFET (Metal Oxide) | 25V | 18.5A (Ta), 66A (Tc) | 4.5V, 10V | 4.8mOhm @ 30A, 10V | 2.1V @ 250µA | 12.4nC @ 10V | ±20V | 771pF @ 12V | - | 2.64W (Ta), 33.8W (Tc) | 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
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Rohm Semiconductor |
MOSFET P-CH 30V 10A 8SOIC |
8,172 |
|
- | P-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 200V 11.8A TO-220F |
4,032 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 11.8A (Tc) | 10V | 150mOhm @ 5.9A, 10V | 5V @ 250µA | 40nC @ 10V | ±30V | 1600pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
|
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ON Semiconductor |
MOSFET N-CH 30V 12A SO8FL |
2,574 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical) | 8-PowerTDFN |
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Nexperia |
MOSFET N-CH 30V 120A D2PAK |
7,686 |
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Automotive, AEC-Q101, TrenchMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 1.9mOhm @ 25A, 10V | 2.8V @ 1mA | 168nC @ 10V | ±16V | 10918pF @ 25V | - | 263W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 33A D2PAK |
5,238 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 33A (Tc) | 10V | 44mOhm @ 16A, 10V | 4V @ 250µA | 71nC @ 10V | ±20V | 1960pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 42A DPAK |
8,532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4V, 10V | 27mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | ±16V | 1700pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 12A TO220 |
8,982 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Tc) | 10V | 650mOhm @ 6A, 10V | 4V @ 250µA | 50nC @ 10V | ±30V | 2010pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 12A TO220F |
8,964 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 720mOhm @ 6A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±30V | 2150pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 14A TO262 |
3,942 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 7A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 278W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 14A TO262F |
5,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 380mOhm @ 7A, 10V | 4.5V @ 250µA | 51nC @ 10V | ±30V | 2297pF @ 25V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
T6 40V SL DPAK |
2,016 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 19A (Ta), 59A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 1200pF @ 20V | - | 4W (Ta), 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 7A TO262F |
8,316 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 3.9V @ 250µA | 8.2nC @ 10V | ±30V | 372pF @ 100V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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ON Semiconductor |
NMOS DPAK 200V 280 MOHM |
2,898 |
|
QFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 5V, 10V | 280mOhm @ 4.5A, 10V | 2V @ 250µA | 21nC @ 5V | ±20V | 1080pF @ 25V | - | 2.5W (Ta), 55W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 60V 28A 150A 5DFN |
3,096 |
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Automotive, AEC-Q101 | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Ta), 150A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 135µA | 52nC @ 10V | ±20V | 3600pF @ 25V | - | 3.7W (Ta), 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |