晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 510/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 60V 75A D2PAK |
3,472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 250µA | 86nC @ 10V | ±20V | 2810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 1000V 4A TO247 |
5,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 4.2Ohm @ 2.5A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 1150pF @ 25V | - | 195W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 40V 120A TO263 |
5,724 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.7mOhm @ 30A, 10V | 3.5V @ 250µA | 310nC @ 10V | ±20V | 17350pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 120A TO263 |
3,906 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 9.5mOhm @ 30A, 10V | 3.5V @ 250µA | 180nC @ 10V | ±20V | 8645pF @ 25V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Vishay Siliconix |
MOSFET N-CH 60V 120A TO262-3 |
3,492 |
|
Automotive, AEC-Q101, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 4.5V, 10V | 4.7mOhm @ 30A, 10V | 2.5V @ 250µA | 230nC @ 10V | ±20V | 8800pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH TO263-7 |
8,550 |
|
Automotive, AEC-Q101, OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 180A (Tc) | 4.5V, 10V | 1mOhm @ 100A, 10V | 2.2V @ 180µA | 310nC @ 10V | +20V, -16V | 24440pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-3 | TO-263-7, D²Pak (6 Leads + Tab) |
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|
IXYS |
MOSFET N-CH 1000V 0.8A TO-263 |
3,672 |
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Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 800mA (Tc) | 10V | 20Ohm @ 500mA, 10V | 4V @ 50µA | 11.3nC @ 10V | ±20V | 240pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 100V 18A TO-263 |
4,392 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 18A (Tc) | 10V | 120mOhm @ 9A, 10V | 4.5V @ 250µA | 39nC @ 10V | ±15V | 2100pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 65V 28A TO-263 |
2,412 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 65V | 28A (Tc) | 10V | 45mOhm @ 14A, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 2030pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET P-CH 50V 32A TO-263 |
7,992 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 32A (Tc) | 10V | 39mOhm @ 500mA, 10V | 4.5V @ 250µA | 46nC @ 10V | ±15V | 1975pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 1000V 500MA TO-263 |
4,896 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 500mA (Tc) | 10V | 30Ohm @ 250mA, 10V | 4V @ 50µA | 8.1nC @ 10V | ±20V | 196pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 25A TO262F |
4,032 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | ±30V | 1278pF @ 100V | - | 28W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | - | TO-262-3 Full Pack, I²Pak |
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Sanken |
MOSFET N-CH 40V TO-3P |
3,420 |
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- | N-Channel | MOSFET (Metal Oxide) | 40V | 70A (Ta) | 10V | 6mOhm @ 35A, 10V | 4V @ 1mA | - | ±20V | 5100pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
5,868 |
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CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 180mOhm @ 5.3A, 10V | 4V @ 260µA | 24nC @ 10V | ±20V | 1080pF @ 400V | - | 29W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 200V 34A TO262-3 |
5,580 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 200V | 34A (Tc) | 10V | 32mOhm @ 34A, 10V | 4V @ 90µA | 29nC @ 10V | ±20V | 2350pF @ 100V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 150V 83A TO-220AB |
2,484 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 83A (Tc) | 10V | 15mOhm @ 33A, 10V | 5V @ 250µA | 107nC @ 10V | ±30V | 4530pF @ 25V | - | 330W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 30A TO252 |
2,142 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 30A (Tc) | 10V | 22mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1800pF @ 25V | - | - | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 50V 50A TO252 |
4,284 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 50V | 50A (Tc) | 4.5V, 10V | 18mOhm @ 20A, 10V | 2.5V @ 250µA | 43nC @ 10V | ±20V | 1800pF @ 25V | - | 2.5W (Ta), 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 650V 25A TO262 |
8,352 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 25A (Tc) | 10V | 190mOhm @ 12.5A, 10V | 4V @ 250µA | 26.4nC @ 10V | ±30V | 1278pF @ 100V | - | 357W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 120A TO262-3-1 |
3,708 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 1.9mOhm @ 100A, 10V | 4V @ 140µA | 176nC @ 10V | ±20V | 14000pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 80V 240A PSOF8 |
2,790 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 240A (Tc) | 10V | 2mOhm @ 80A, 10V | 4V @ 250µA | 169nC @ 10V | ±20V | 10000pF @ 40V | - | 357W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
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Infineon Technologies |
MOSFET N-CH 60V 80A TO262-3 |
6,714 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 60V | 90A (Tc) | 4.5V, 10V | 3.7mOhm @ 90A, 10V | 2.2V @ 90µA | 170nC @ 10V | ±16V | 13000pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 75V 106A D2PAK |
5,652 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 106A (Tc) | 10V | 7mOhm @ 82A, 10V | 4V @ 250µA | 220nC @ 10V | ±20V | 5310pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 650V TO-220-3 |
2,898 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11.4A (Tc) | 10V | 310mOhm @ 4.4A, 10V | 4.5V @ 440µA | 41nC @ 10V | ±20V | 1110pF @ 100V | - | 104.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 23A TO-220 |
4,320 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 158mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±30V | 2418pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Infineon Technologies |
TRENCH 40<-<100V |
4,716 |
|
OptiMOS™, StrongIRFET™ | - | - | 80V | - | - | - | - | - | - | - | - | - | - | Surface Mount | PG-TSON-8-3 | 8-PowerTDFN |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
3,978 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
5,274 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 60V 93A TO252 |
7,884 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 93A (Tc) | 10V | 7.8mOhm @ 20A, 10V | 4.5V @ 250µA | 145nC @ 10V | ±20V | 7000pF @ 25V | - | 3W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 560V 16A TO220FP |
7,398 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 560V | 16A (Tc) | 10V | 280mOhm @ 10A, 10V | 3.9V @ 675µA | 66nC @ 10V | ±20V | 1600pF @ 25V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Full Pack |