晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 515/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
LOW POWER_LEGACY |
8,964 |
|
CoolMOS™ CFD2 | N-Channel | MOSFET (Metal Oxide) | 650V | 8.7A (Tc) | 10V | 420mOhm @ 3.4A, 10V | 4.5V @ 300µA | 31.5nC @ 10V | ±20V | 870pF @ 100V | - | 83.3W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-41 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20.2A TO262 |
2,016 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20.2A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 3.5V @ 730µA | 73nC @ 10V | ±20V | 1620pF @ 100V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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ON Semiconductor |
MOSFET N-CH 100V 61A D2PAK |
2,124 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 100V | 9A (Ta), 61A (Tc) | 6V, 10V | 16mOhm @ 61A, 10V | 4V @ 250µA | 53nC @ 10V | ±20V | 2880pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 100V 100A TO263-3 |
2,124 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4.8mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V TO220-3 |
8,028 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
|
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Infineon Technologies |
MOSFET N-CH 900V 11A TO-262 |
4,032 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 900V TO-262 |
6,120 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 75V 60A POLARPAK |
6,300 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 60A (Tc) | 4.5V, 10V | 9.5mOhm @ 16A, 10V | 3V @ 250µA | 95nC @ 10V | ±20V | 3200pF @ 38V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
|
|
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Vishay Siliconix |
MOSFET N-CH 20V 60A POLARPAK |
2,070 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 60A (Tc) | 4.5V, 10V | 1.6mOhm @ 25A, 10V | 3V @ 250µA | 155nC @ 10V | ±20V | 8800pF @ 10V | - | 5.2W (Ta), 125W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (L) | 10-PolarPAK® (L) |
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ON Semiconductor |
MOSFET N-CH 40V 240A H-PSOF8 |
6,696 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 240A (Tc) | 10V | 1.2mOhm @ 80A, 10V | 4V @ 250µA | 107nC @ 10V | ±20V | 7735pF @ 25V | - | 300W (Tj) | -55°C ~ 175°C (TJ) | Surface Mount | 8-HPSOF | 8-PowerSFN |
|
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|
Infineon Technologies |
MOSFET N-CH 55V 150A D2PAK |
4,806 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 150A (Tc) | 10V | 4.9mOhm @ 75A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 4780pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 600V TO220FP-3 |
2,664 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | ±20V | 2080pF @ 100V | - | 34W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3 |
3,258 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 160mOhm @ 9A, 10V | 4.5V @ 750µA | 44nC @ 10V | ±20V | 2080pF @ 100V | - | 176W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220 |
8,928 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 3.9V @ 500µA | 60nC @ 10V | ±20V | 1200pF @ 25V | - | 33W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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ON Semiconductor |
MOSFET N-CH 30V 20A SO8FL |
4,464 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta), 210A (Tc) | 4.5V, 10V | 1.2mOhm @ 30A, 10V | 2.2V @ 250µA | 62.1nC @ 4.5V | ±20V | 10930pF @ 15V | - | 1.06W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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ON Semiconductor |
MOSFET N-CH 60V 77A TO-220F |
3,636 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 77A (Tc) | 10V | 4.1mOhm @ 77A, 10V | 4V @ 250µA | 69nC @ 10V | ±20V | 5690pF @ 30V | - | 44.1W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 70A TO262-3 |
8,316 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 70A (Tc) | 4.5V, 10V | 16mOhm @ 50A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 650V 125MOHM TO220 |
5,742 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 125mOhm @ 12A, 10V | 4.5V @ 2.4mA | 46nC @ 10V | ±30V | 1940pF @ 400V | - | 181W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 500V 29A TO220F |
4,104 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 29A (Tc) | 10V | 150mOhm @ 14.5A, 10V | 3.9V @ 250µA | 26.6nC @ 10V | ±30V | 1312pF @ 100V | - | 37.9W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3F | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 10V DRIVE LPTS |
8,910 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 12A (Ta) | 10V | 420mOhm @ 6A, 10V | 4.5V @ 1mA | 35nC @ 10V | ±30V | 1300pF @ 25V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | LPTS | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 800V D2PAK TO-263 |
3,400 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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|
IXYS |
MOSFET N-CH 100V 130A TO263 |
3,690 |
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TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±30V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 110A TO-263 |
2,880 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 10V | 1.8mOhm @ 80A, 10V | 4V @ 250µA | 163nC @ 10V | ±20V | 10100pF @ 30V | - | 333W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 75V 140A TO263 |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 75V | 21.5A (Ta), 140A (Tc) | 6V, 10V | 2.3mOhm @ 20A, 10V | 3V @ 250µA | 215nC @ 10V | ±20V | 10350pF @ 37.5V | - | 2.1W (Ta), 500W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 20V 27A TO-263 |
7,290 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 27A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
IXYS |
MOSFET N-CH 150V 38A TO-263 |
2,232 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 38A (Tc) | - | - | - | - | - | - | - | - | - | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO220AB |
7,992 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2.3mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH TO263-3 |
4,662 |
|
Automotive, AEC-Q101, CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 17.5A (Tc) | 10V | 190mOhm @ 7.3A, 10V | 4.5V @ 700µA | 68nC @ 10V | ±20V | 1850pF @ 100V | - | 151W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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ON Semiconductor |
MOSFET N-CH 60V 40A SO-8FL |
4,374 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 40A (Ta), 287A (Tc) | 4.5V, 10V | 1.2mOhm @ 50A, 10V | 2V @ 250µA | 120nC @ 10V | ±20V | 8900pF @ 25V | - | 3.9W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N-CH 600V TO247-3 |
4,896 |
|
CoolMOS™ P6 | N-Channel | MOSFET (Metal Oxide) | 600V | 13.8A (Tc) | 10V | 280mOhm @ 5.2A, 10V | 4.5V @ 430µA | 25.5nC @ 10V | ±20V | 1190pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |