晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 522/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IXYS |
MOSFET N-CH 1000V 1.6A D2PAK |
8,874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 1.6A (Tc) | 10V | 10Ohm @ 800mA, 0V | - | 27nC @ 5V | ±20V | 645pF @ 25V | Depletion Mode | 100W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MV POWER MOS |
5,760 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
|
|
|
Infineon Technologies |
MOSFET N-CH 24V 240A D2PAK-7 |
6,012 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 24V | 240A (Tc) | - | 1mOhm @ 160A, 10V | 4V @ 250µA | 252nC @ 10V | - | 7700pF @ 19V | - | - | - | Surface Mount | D2PAK (7-Lead) | TO-263-7, D²Pak (6 Leads + Tab) |
|
|
|
Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 12.5A TO-220SIS |
8,244 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 12.5A (Ta) | 10V | 480mOhm @ 6.3A, 10V | 4V @ 1mA | 38nC @ 10V | ±30V | 1800pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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|
Infineon Technologies |
MOSFET N-CH 200V 43A TO-262-3 |
3,312 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 43A (Tc) | - | 54mOhm @ 26A, 10V | 5V @ 250µA | 91nC @ 10V | - | 2900pF @ 25V | - | - | - | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
|
|
IXYS |
MOSFET N-CH 1000V 4A D2PAK |
8,316 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 1000V | 4A (Tc) | 10V | 3.3Ohm @ 2A, 10V | 5V @ 250µA | 26nC @ 10V | ±20V | 1456pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET P-CH 150V 15A TO-220 |
3,834 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 150V | 15A (Tc) | 10V | 240mOhm @ 7A, 10V | 4.5V @ 250µA | 48nC @ 10V | ±15V | 3650pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET P-CH 100V 26A TO-220 |
5,580 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 100V | 26A (Tc) | 10V | 90mOhm @ 13A, 10V | 4.5V @ 250µA | 52nC @ 10V | ±15V | 3820pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET P-CH 50V 48A TO-220 |
8,568 |
|
TrenchP™ | P-Channel | MOSFET (Metal Oxide) | 50V | 48A (Tc) | 10V | 30mOhm @ 24A, 10V | 4.5V @ 250µA | 53nC @ 10V | ±15V | 3660pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CHANNEL 700V 8A TO220 |
2,574 |
|
- | N-Channel | MOSFET (Metal Oxide) | 700V | 8A (Tc) | 10V | 500mOhm @ 500mA, 10V | 5V @ 250µA | 12nC @ 10V | ±30V | 800pF @ 10V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 200V TO-3P |
7,200 |
|
- | N-Channel | MOSFET (Metal Oxide) | 200V | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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|
IXYS |
MOSFET N-CH 150V 56A TO-3P |
4,680 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 56A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Infineon Technologies |
MOSFET N-CH 80V 1A SAWN ON FOIL |
6,480 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 80V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.5V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Vishay Siliconix |
MOSFET N-CH 500V 5A TO-220AB |
5,400 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.4Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 620pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 650V 30A TO220-3 |
3,060 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 99mOhm @ 15A, 10V | 4.5V @ 3mA | 61nC @ 10V | ±30V | 2480pF @ 400V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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IXYS |
MOSFET N-CH 150V 42A TO-220 |
6,138 |
|
TrenchHV™ | N-Channel | MOSFET (Metal Oxide) | 150V | 42A (Tc) | 10V | 45mOhm @ 500mA, 10V | 4.5V @ 250µA | 21nC @ 10V | ±30V | 1880pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 500V 8A TO-263AA |
6,192 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5V @ 1.5mA | 13nC @ 10V | ±30V | 705pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 150V 43A TO-220AB |
5,148 |
|
UltraFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 43A (Tc) | 10V | 42mOhm @ 43A, 10V | 4V @ 250µA | 175nC @ 20V | ±20V | 2730pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 40V 110A TO262AB |
7,884 |
|
Automotive, AEC-Q101, PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 2.2mOhm @ 80A, 10V | 4V @ 250µA | 138nC @ 10V | ±20V | 7710pF @ 25V | - | 176W (Tj) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
SF3 650V 165MOHM E TO247L |
6,336 |
|
SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 19A (Tc) | 10V | 165mOhm @ 9.5A, 10V | 4.5V @ 1.9mA | 39nC @ 10V | ±30V | 1500pF @ 400V | - | 154W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A TO262 |
2,160 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO262-3 |
5,418 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 5.1mOhm @ 100A, 10V | 4V @ 240µA | 176nC @ 10V | ±20V | 11570pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 650V 21A TO-220 |
8,136 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 21A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | ±30V | 2322pF @ 100V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Full Pack | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO247AC |
3,150 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO247AC |
3,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 340mOhm @ 8A, 10V | 5V @ 250µA | 90nC @ 10V | ±30V | 1780pF @ 100V | - | 277.8W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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|
IXYS |
MOSFET N-CH 500V 12A TO-220 |
6,066 |
|
Polar™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 250µA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 800V 7A TO-263 |
6,120 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 800V | 7A (Tc) | 10V | 1.44Ohm @ 3.5A, 10V | 5V @ 1mA | 32nC @ 10V | ±30V | 1890pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 650V 12A TO-220 |
8,748 |
|
- | N-Channel | MOSFET (Metal Oxide) | 650V | 12A (Tc) | 10V | 300mOhm @ 6A, 10V | 5V @ 250µA | 17nC @ 10V | ±30V | 1100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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IXYS |
MOSFET N-CH |
4,950 |
|
TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 40V | 230A (Tc) | 10V | 2.9mOhm @ 115A, 10V | 4V @ 250µA | 140nC @ 10V | ±15V | 7400pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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Infineon Technologies |
MOSFET N-CH 75V 1A SAWN ON FOIL |
6,192 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 3.8V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |