晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 528/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
2,106 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 270µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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ON Semiconductor |
MOSFET N-CH 650V 24A |
3,294 |
|
SuperFET® II | N-Channel | MOSFET (Metal Oxide) | 650V | 24A (Tc) | 10V | 150mOhm @ 12A, 10V | 5V @ 2.4mA | 94nC @ 10V | ±20V | 3737pF @ 100V | - | 298W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247 Long Leads | TO-247-3 |
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STMicroelectronics |
MOSFET N-CH 550V 13A D2PAK |
5,220 |
|
MDmesh™ V | N-Channel | MOSFET (Metal Oxide) | 550V | 16A (Tc) | 10V | 192mOhm @ 8A, 10V | 5V @ 250µA | 31nC @ 10V | ±25V | 1260pF @ 100V | - | 110W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 1000V 0.75A TO-263 |
5,310 |
|
- | N-Channel | MOSFET (Metal Oxide) | 1000V | 750mA (Tc) | 10V | 17Ohm @ 375mA, 10V | 4.5V @ 250µA | 7.8nC @ 10V | ±30V | 260pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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|
IXYS |
MOSFET N-CH 55V 110A TO-220 |
2,700 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 55V | 110A (Tc) | 10V | 13.5mOhm @ 500mA, 10V | 5.5V @ 250µA | 76nC @ 10V | ±20V | 2210pF @ 25V | - | 390W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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|
IXYS |
MOSFET N-CH 1200V 1A TO-220 |
2,664 |
|
PolarVHV™ | N-Channel | MOSFET (Metal Oxide) | 1200V | 1A (Tc) | 10V | 20Ohm @ 500mA, 10V | 4.5V @ 50µA | 17.6nC @ 10V | ±20V | 550pF @ 25V | - | 63W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 250V 42A TO-220 |
6,318 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 250V | 42A (Tc) | 10V | 84mOhm @ 500mA, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2300pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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|
IXYS |
MOSFET N-CH 150V 62A TO-220 |
3,348 |
|
PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 150V | 62A (Tc) | 10V | 40mOhm @ 31A, 10V | 5.5V @ 250µA | 70nC @ 10V | ±20V | 2250pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH 100V 130A D2PAK |
5,256 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 1mA | 104nC @ 10V | - | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 500V 20A TO-263AA |
6,624 |
|
HiPerFET™, Polar3™ | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 300mOhm @ 10A, 10V | 5V @ 1.5mA | 36nC @ 10V | ±30V | 1800pF @ 25V | - | 380W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
60V/220A TRENCHT3 HIPERFET MOSFE |
4,986 |
|
HiperFET™, TrenchT3™ | N-Channel | MOSFET (Metal Oxide) | 60V | 220A (Tc) | 10V | 4mOhm @ 100A, 10V | 4V @ 250µA | 136nC @ 10V | ±20V | 8500pF @ 25V | - | 440W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
SUPERFET3 650V D2PAK PKG |
4,482 |
|
FRFET®, SuperFET® III | N-Channel | MOSFET (Metal Oxide) | 650V | 30A (Tc) | 10V | 110mOhm @ 15A, 10V | 5V @ 3mA | 58nC @ 10V | ±30V | 2560pF @ 400V | - | 240W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D²PAK-3 (TO-263-3) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET N-CH 150V 1A SAWN ON FOIL |
6,534 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 150V | 1A (Tj) | 10V | 100mOhm @ 2A, 10V | 4V @ 250µA | - | - | - | - | - | - | Surface Mount | Sawn on foil | Die |
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Texas Instruments |
MOSFET N-CH 80V 200A DDPAK-3 |
2,358 |
|
NexFET™ | N-Channel | MOSFET (Metal Oxide) | 80V | 200A (Ta) | 6V, 10V | 3.1mOhm @ 100A, 10V | 3.2V @ 250µA | 76nC @ 10V | ±20V | 7920pF @ 40V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DDPAK/TO-263-3 | TO-263-4, D²Pak (3 Leads + Tab), TO-263AA |
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Infineon Technologies |
MV POWER MOS |
6,300 |
|
* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Infineon Technologies |
MOSFET N-CH 900V TO-247 |
3,186 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 900V | 11A (Tc) | 10V | 500mOhm @ 6.6A, 10V | 3.5V @ 740µA | 68nC @ 10V | ±20V | 1700pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 40V 195A D2PAK |
7,128 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 10V | 2mOhm @ 75A, 10V | 4V @ 250µA | 240nC @ 10V | ±20V | 6450pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Alpha & Omega Semiconductor |
MOSFET N-CH 600V 37A TO263 |
3,420 |
|
aMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 37A (Tc) | 10V | 109mOhm @ 21A, 10V | 3.8V @ 250µA | 40nC @ 10V | ±30V | 2154pF @ 100V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 21A TO247AC |
8,802 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 197mOhm @ 11A, 10V | 5V @ 250µA | 74nC @ 10V | ±30V | 1690pF @ 100V | - | 227W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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|
IXYS |
MOSFET N-CH 600V 14A TO-220 |
2,268 |
|
HiPerFET™, PolarHT™ | N-Channel | MOSFET (Metal Oxide) | 600V | 14A (Tc) | 10V | 550mOhm @ 7A, 10V | 5.5V @ 2.5mA | 36nC @ 10V | ±30V | 2500pF @ 25V | - | 300W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
5,616 |
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TrenchT4™ | N-Channel | MOSFET (Metal Oxide) | 36V | 380A (Tc) | 10V | 1mOhm @ 100A, 10V | 4V @ 250µA | 260nC @ 10V | ±15V | 13400pF @ 25V | - | 480W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7 | TO-263-7, D²Pak (6 Leads + Tab) |
|
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Infineon Technologies |
MOSFET N-CH 40V 202A D2PAK |
5,166 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 4mOhm @ 95A, 10V | 4V @ 250µA | 200nC @ 10V | ±20V | 7360pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 600V 20A 4VSON |
4,122 |
|
CoolMOS™ C7 | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 104mOhm @ 9.7A, 10V | 4V @ 490µA | 42nC @ 10V | ±20V | 1819pF @ 400V | - | 122W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | PG-VSON-4 | 4-PowerTSFN |
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IXYS |
MOSFET N-CH 500V 12A D2-PAK |
6,714 |
|
HiPerFET™, PolarP2™ | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Tc) | 10V | 500mOhm @ 6A, 10V | 5.5V @ 1mA | 29nC @ 10V | ±30V | 1830pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXFA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 15A TO-220SIS |
7,758 |
|
π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 15A (Ta) | 10V | 370mOhm @ 7.5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 2600pF @ 25V | - | 50W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
|
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ON Semiconductor |
MOSFET N-CH 30V 47A 303A 5DFN |
3,726 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 47A (Ta), 303A (Tc) | 4.5V, 10V | 0.7mOhm @ 30A, 10V | 2.2V @ 250µA | 139nC @ 10V | ±20V | 10144pF @ 15V | - | 3.2W (Ta), 134W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
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IXYS |
MOSFET N-CH 100V 130A TO-263-7 |
7,956 |
|
TrenchMV™ | N-Channel | MOSFET (Metal Oxide) | 100V | 130A (Tc) | 10V | 9.1mOhm @ 25A, 10V | 4.5V @ 250µA | 104nC @ 10V | ±20V | 5080pF @ 25V | - | 360W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB |
|
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IXYS |
MOSFET N-CH 150V 76A TO-220 |
2,898 |
|
HiPerFET™, TrenchT2™ | N-Channel | MOSFET (Metal Oxide) | 150V | 76A (Tc) | 10V | 20mOhm @ 38A, 10V | 4.5V @ 250µA | 97nC @ 10V | ±20V | 5800pF @ 25V | - | 350W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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IXYS |
MOSFET N-CH |
6,768 |
|
HiPerFET™ | N-Channel | MOSFET (Metal Oxide) | 650V | 22A (Tc) | 10V | 145mOhm @ 11A, 10V | 5V @ 1.5mA | 37nC @ 10V | ±30V | 2190pF @ 25V | - | 37W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220 Isolated Tab | TO-220-3 Full Pack, Isolated Tab |
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ON Semiconductor |
MOSFET N-CH 80V 164A 8-DUAL COOL |
4,392 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 80V | 164A (Tc) | 8V, 10V | 1.35mOhm @ 36A, 10V | 4V @ 250µA | 260nC @ 10V | ±20V | 19600pF @ 40V | - | 178W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-Dual Cool™88 | 8-PowerVDFN |