晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 604/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 55V 53A TO-247AC |
8,658 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 20mOhm @ 29A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1500pF @ 25V | - | 120W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 81A TO-247AC |
4,374 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 81A (Tc) | 10V | 12mOhm @ 43A, 10V | 4V @ 250µA | 130nC @ 10V | ±20V | 2900pF @ 25V | - | 170W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247AC | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 55V 44A DPAK |
7,812 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 44A (Tc) | 10V | 27mOhm @ 26A, 10V | 4V @ 250µA | 65nC @ 10V | ±20V | 1300pF @ 25V | - | 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 27A DPAK |
6,624 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 27A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 3.7A SOT223 |
5,724 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.7A (Ta) | 10V | 45mOhm @ 3.7A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 660pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.6A SOT223 |
3,562 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.6A (Ta) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 55V 3.8A SOT223 |
4,446 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 3.8A (Ta) | 4V, 10V | 40mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | ±16V | 870pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 30V 4.6A SOT223 |
6,588 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 4.6A (Ta) | 4.5V, 10V | 31mOhm @ 4.6A, 10V | 1V @ 250µA | 50nC @ 10V | ±16V | 840pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 50V 15A D2PAK |
4,968 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 10V | 100mOhm @ 7.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 450pF @ 25V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 50V 15A D2PAK |
4,518 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 15A (Tc) | 5V, 10V | 80mOhm @ 15A, 10V | 2V @ 250µA | 17nC @ 5V | ±16V | 600pF @ 25V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
5,976 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 100mOhm @ 7.5A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 450pF @ 25V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK |
3,438 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V, 10V | 80mOhm @ 15A, 10V | 2V @ 250µA | 17nC @ 5V | ±16V | 600pF @ 25V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 30V 25A D2PAK |
6,048 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 22mOhm @ 25A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1100pF @ 15V | - | 50W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 48A TO-263AB |
6,084 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 25mOhm @ 24A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1800pF @ 25V | - | 100W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 50V 75A D2PAK |
4,248 |
|
- | N-Channel | MOSFET (Metal Oxide) | 50V | 75A (Tc) | - | 13mOhm @ 40A, 10V | 4V @ 250µA | 115nC @ 10V | - | 3600pF @ 25V | - | - | - | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 50V 75A D2PAK |
5,688 |
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- | N-Channel | MOSFET (Metal Oxide) | 50V | 75A (Tc) | - | 15mOhm @ 37.5A, 5V | 2V @ 250µA | 115nC @ 5V | - | 4000pF @ 25V | - | - | - | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
6,210 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 13mOhm @ 40A, 10V | 4V @ 250µA | 115nC @ 10V | ±20V | 3600pF @ 25V | - | 150W (Tc) | -65°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 60V 75A D2PAK |
6,876 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | - | 15mOhm @ 37.5A, 5V | 2V @ 250µA | 115nC @ 5V | - | 4000pF @ 25V | - | - | - | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK |
3,996 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 100mOhm @ 9A, 10V | 2V @ 250µA | 34nC @ 5V | ±20V | 800pF @ 25V | - | 3.8W (Ta), 79W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-220AB |
8,154 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 150V 27A TO-220AB |
5,994 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 27A (Tc) | 10V | 70mOhm @ 12A, 10V | 4V @ 250µA | 95nC @ 10V | ±20V | 1300pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 100V 24A TO220FP |
3,636 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 24A (Tc) | 10V | 36mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 1900pF @ 25V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 7.6A TO220FP |
5,976 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 7.6A (Tc) | 10V | 200mOhm @ 4.3A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 100V 12A TO220FP |
4,464 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 12A (Tc) | 10V | 110mOhm @ 6.6A, 10V | 4V @ 250µA | 44nC @ 10V | ±20V | 640pF @ 25V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 14A TO220FP |
4,626 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 71mOhm @ 7.8A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 21A TO220FP |
2,214 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 21A (Tc) | 10V | 42mOhm @ 11A, 10V | 4V @ 250µA | 34nC @ 10V | ±20V | 700pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 33A TO220FP |
8,136 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 33A (Tc) | 10V | 20mOhm @ 19A, 10V | 4V @ 250µA | 61nC @ 10V | ±20V | 1500pF @ 25V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 36A TO220FP |
8,640 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 36A (Tc) | 10V | 16mOhm @ 22A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 1900pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 60V 28A TO-220AB |
6,336 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 28A (Tc) | 10V | 42mOhm @ 17A, 10V | 4V @ 250µA | 30nC @ 10V | ±20V | 680pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 48A TO-220AB |
4,500 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 48A (Tc) | 10V | 23mOhm @ 29A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1360pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |