晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 631/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
3,474 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
4,500 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
2,700 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 18A DPAK |
3,942 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 18A (Tc) | 10V | 110mOhm @ 9.6A, 10V | 4V @ 250µA | 32nC @ 10V | ±20V | 650pF @ 25V | - | 57W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
3,150 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
5,652 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
2,286 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | 10V | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | ±20V | 860pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
5,238 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 50V 5.3A DPAK |
2,646 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 5.3A (Tc) | 10V | 500mOhm @ 2.8A, 10V | 4V @ 250µA | 9.1nC @ 10V | ±20V | 240pF @ 25V | - | 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 60V 5.1A DPAK |
5,562 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
8,064 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
2,160 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
7,164 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 60V 5.1A DPAK |
7,830 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 5.1A (Tc) | 10V | 500mOhm @ 3.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
2,664 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
7,722 |
|
- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
3,690 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Infineon Technologies |
MOSFET P-CH 55V 11A DPAK |
2,034 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 11A (Tc) | 10V | 175mOhm @ 6.6A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 350pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
3,582 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
2,880 |
|
- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK |
3,544 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 1.2Ohm @ 1.9A, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
6,048 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET P-CH 100V 6.6A DPAK |
7,830 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 100V | 6.6A (Tc) | 10V | 480mOhm @ 3.9A, 10V | 4V @ 250µA | 27nC @ 10V | ±20V | 350pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 100V 5.6A DPAK |
5,130 |
|
- | P-Channel | MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 10V | 600mOhm @ 3.4A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 390pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
2,430 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 200V 1.9A DPAK |
4,086 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 1.9A (Tc) | 10V | 3Ohm @ 1.1A, 10V | 4V @ 250µA | 8.9nC @ 10V | ±20V | 170pF @ 25V | - | 2.5W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
6,966 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
8,154 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 250V 2.7A DPAK |
6,426 |
|
- | P-Channel | MOSFET (Metal Oxide) | 250V | 2.7A (Tc) | 10V | 3Ohm @ 1.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 220pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 200V 3.6A DPAK |
7,416 |
|
- | P-Channel | MOSFET (Metal Oxide) | 200V | 3.6A (Tc) | 10V | 1.5Ohm @ 2.2A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 340pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |