晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 647/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 800V 3.6A TO-220AB |
4,662 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 800V | 3.6A (Tc) | 10V | 3Ohm @ 2A, 10V | 4V @ 1mA | - | ±20V | 1350pF @ 25V | - | 100W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 3.2A TO-220AB |
3,222 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.2A (Tc) | 10V | 1.4Ohm @ 2A, 10V | 5.5V @ 135µA | 16nC @ 10V | ±20V | 420pF @ 25V | - | 38W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 7.3A TO-220AB |
3,618 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 8.8A TO-220AB |
3,546 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 15nC @ 10V | ±20V | 420pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 11A TO-220AB |
6,624 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 11A (Tc) | 10V | 380mOhm @ 7A, 10V | 5.5V @ 500µA | 54nC @ 10V | ±20V | 1460pF @ 25V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET P-CH 60V 18.7A TO-220AB |
7,866 |
|
SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 18.7A (Ta) | 10V | 130mOhm @ 13.2A, 10V | 4V @ 1mA | 28nC @ 10V | ±20V | 860pF @ 25V | - | 81.1W (Ta) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 650V 20A TO-220AB |
4,644 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 650V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | ±20V | 3000pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 600V 20A TO-247 |
7,848 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 190mOhm @ 13A, 10V | 5.5V @ 1mA | 103nC @ 10V | ±20V | 3000pF @ 25V | - | 208W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
8,010 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 2.3V @ 50µA | 2.5nC @ 10V | ±20V | 78pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 100V 370MA SOT223 |
4,860 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 370mA (Ta) | 2.8V, 10V | 6Ohm @ 370mA, 10V | 1.8V @ 50µA | 2.4nC @ 10V | ±20V | 70pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
7,164 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223 |
4,716 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 300mOhm @ 1.8A, 10V | 1.8V @ 400µA | 17nC @ 10V | ±20V | 368pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 1.1A SOT223 |
3,582 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Ta) | 4.5V, 10V | 700mOhm @ 1.1A, 10V | 1.8V @ 400µA | 17.2nC @ 10V | ±20V | 364pF @ 25V | - | 1.79W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET P-CH 60V 1.17A SOT-223 |
7,164 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 1.17A (Ta) | 4.5V, 10V | 800mOhm @ 1.17A, 10V | 2V @ 160µA | 7.8nC @ 10V | ±20V | 160pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT223 |
7,488 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 2.8V, 4.5V | 6Ohm @ 350mA, 10V | 1.4V @ 108µA | 6.8nC @ 10V | ±20V | 95pF @ 25V | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 100V 170MA SOT-23 |
4,212 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 170mA (Ta) | 4.5V, 10V | 6Ohm @ 170mA, 10V | 1.8V @ 50µA | 2.67nC @ 10V | ±20V | 69pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 240V .11A SOT-23 |
7,038 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1nC @ 10V | ±20V | 77pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 60V 230MA SOT-23 |
2,610 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 60V | 230mA (Ta) | 4.5V, 10V | 3.5Ohm @ 230mA, 10V | 1.4V @ 250µA | 1.4nC @ 10V | ±20V | 41pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET P-CH 60V 170MA SOT-23 |
3,060 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 170mA (Ta) | 4.5V, 10V | 8Ohm @ 170mA, 10V | 2V @ 20µA | 1.5nC @ 10V | ±20V | 19pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 240V 260MA SOT-89 |
4,338 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 260mA (Ta) | 4.5V, 10V | 6Ohm @ 260mA, 10V | 1.8V @ 108µA | 5.5nC @ 10V | ±20V | 97pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT89-4-2 | TO-243AA |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A DPAK |
3,780 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Diodes Incorporated |
MOSFET P-CH 35V 12A TO-220-3 |
5,868 |
|
- | P-Channel | MOSFET (Metal Oxide) | 35V | 3.3A (Ta), 12A (Tc) | 4.5V, 10V | 75mOhm @ 2.4A, 10V | 1V @ 250µA | 46nC @ 10V | ±20V | 825pF @ 25V | - | 1.5W (Ta), 20W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 140A I-PAK |
5,580 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.3V @ 250µA | 50nC @ 4.5V | ±20V | 4010pF @ 15V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 20V 26A DIRECTFET |
7,272 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 26A (Ta), 85A (Tc) | 4.5V, 10V | 3.8mOhm @ 26A, 10V | 2.2V @ 250µA | 45nC @ 4.5V | ±20V | 3440pF @ 15V | - | 3.6W (Ta), 42W (Tc) | - | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 20V 11A DIRECTFET |
5,670 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 11A (Ta), 48A (Tc) | 4.5V, 10V | 13mOhm @ 11A, 10V | 2.3V @ 250µA | 18nC @ 4.5V | ±20V | 1420pF @ 10V | - | 2.3W (Ta), 42W (Tc) | - | Surface Mount | DIRECTFET™ MQ | DirectFET™ Isometric MQ |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
8,874 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 92A (Tc) | 4.5V, 10V | 3.4mOhm @ 25A, 10V | 2.5V @ 250µA | 72nC @ 4.5V | +20V, -12V | 6590pF @ 15V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 30V 12A DIRECTFET |
2,052 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta), 49A (Tc) | 4.5V, 7V | 11.5mOhm @ 12A, 7V | 2.1V @ 250µA | 26nC @ 4.5V | ±12V | 2270pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MQ | DirectFET™ Isometric MQ |
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Infineon Technologies |
MOSFET N-CH 30V 27A DIRECTFET |
4,176 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 27A (Ta), 94A (Tc) | 4.5V, 7V | 3.3mOhm @ 25A, 10V | 2V @ 250µA | 75nC @ 4.5V | ±12V | 6930pF @ 15V | - | 3.6W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
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Infineon Technologies |
MOSFET N-CH 150V 2.6A SOT223 |
7,344 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 2.6A (Ta) | 10V | 185mOhm @ 1.6A, 10V | 5V @ 250µA | 19nC @ 10V | ±30V | 420pF @ 25V | - | 2.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 600V 17A TO-220AB |
2,484 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 17A (Tc) | 10V | 420mOhm @ 10A, 10V | 5V @ 250µA | 99nC @ 10V | ±30V | 2700pF @ 25V | - | 340W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |