晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 659/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
8,532 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
5,148 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 55V 14A TO220FP |
5,490 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 33W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 26A DPAK |
5,274 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
2,844 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 26A I-PAK |
7,596 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK |
2,988 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
2,340 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
6,732 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
|
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
2,898 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | ±20V | 550pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK |
3,366 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 55V 26A DPAK |
2,988 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 180A ISOTOP |
8,802 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6Ohm @ 40A, 10V | 4V @ 250µA | 795nC @ 10V | ±20V | 21000pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
6,444 |
|
STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 220A (Tc) | 10V | 5.5mOhm @ 125A, 10V | 4V @ 250µA | 900nC @ 10V | ±20V | 31000pF @ 25V | - | 500W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 900V 26A ISOTOP |
3,852 |
|
- | N-Channel | MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 3.75V @ 1mA | 660nC @ 10V | ±30V | 1770pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 650V 48A ISOTOP |
2,250 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | ±30V | 3800pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 500V 70A ISOTOP |
5,490 |
|
MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 70A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266nC @ 10V | ±30V | 7500pF @ 25V | - | 600W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
7,776 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
5,796 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 18A 8-SOIC |
4,320 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta) | 4.5V, 10V | 5mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | ±20V | 4500pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8-SOIC |
2,124 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51nC @ 4.5V | ±20V | 4310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 52V 2.6A SOT223 |
8,874 |
|
- | N-Channel | MOSFET (Metal Oxide) | 52V | 2.6A (Ta) | 3V, 10V | 125mOhm @ 2.6A, 10V | 2.5V @ 100µA | 7nC @ 4.5V | ±15V | 250pF @ 35V | - | 1.69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
7,056 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | ±15V | 440pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |
7,038 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 5V | 175mOhm @ 1A, 5V | 2V @ 250µA | 10nC @ 5V | ±15V | 270pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |
5,580 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 10V | 160mOhm @ 1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 280pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
3,402 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 10V | 110mOhm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 455pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 24V 12A DPAK |
6,030 |
|
- | N-Channel | MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2V @ 250µA | 17.7nC @ 5V | ±20V | 2050pF @ 20V | - | 1.25W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 28V 60A DPAK |
7,092 |
|
- | N-Channel | MOSFET (Metal Oxide) | 28V | 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 3V @ 250µA | 30nC @ 4.5V | ±20V | 2150pF @ 24V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 30V 8.4A DPAK |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.4A (Ta), 68A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 2400pF @ 24V | - | 1.04W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 24V 30A DPAK |
8,280 |
|
- | N-Channel | MOSFET (Metal Oxide) | 24V | 30A (Ta) | 4.5V, 10V | 14.5mOhm @ 30A, 10V | 3V @ 250µA | 20nC @ 4.5V | ±20V | 1000pF @ 20V | - | 75W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |