晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 735/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
4,554 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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Infineon Technologies |
MOSFET N-CH 30V 32A DIRECTFET |
6,876 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 32A, 10V | 2.35V @ 250µA | 71nC @ 4.5V | ±20V | 5970pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 18A DIRECTFET |
8,982 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 18A (Ta), 81A (Tc) | 4.5V, 10V | 4.5mOhm @ 18A, 10V | 2.45V @ 250µA | 27nC @ 4.5V | ±20V | 2420pF @ 10V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ ST | DirectFET™ Isometric ST |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 14A DIRECTFET |
8,118 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta), 59A (Tc) | 4.5V, 10V | 7.7mOhm @ 14A, 10V | 2.35V @ 250µA | 17nC @ 4.5V | ±20V | 1330pF @ 15V | - | 2.3W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MP | DirectFET™ Isometric MP |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET |
5,364 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | ±20V | 3770pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 25A DIRECTFET |
7,272 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 140A (Tc) | 4.5V, 10V | 2.9mOhm @ 25A, 10V | 2.35V @ 100µA | 45nC @ 4.5V | ±20V | 3770pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 10.3A DIRECTFET |
6,516 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 10.3A (Ta), 60A (Tc) | 10V | 13mOhm @ 10.3A, 10V | 4.8V @ 150µA | 47nC @ 10V | ±20V | 2210pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 5.7A DIRECTFET |
5,328 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 5.7A (Ta), 25A (Tc) | 10V | 35mOhm @ 5.7A, 10V | 4.9V @ 50µA | 20nC @ 10V | ±20V | 890pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SJ | DirectFET™ Isometric SJ |
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|
Infineon Technologies |
MOSFET N-CH 80V 12A DIRECTFET |
7,794 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 12A (Ta), 68A (Tc) | 10V | 9.5mOhm @ 12A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2060pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
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Infineon Technologies |
MOSFET N-CH 60V 86A DIRECTFET |
8,028 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 86A (Tc) | 10V | 7mOhm @ 17A, 10V | 4.9V @ 150µA | 50nC @ 10V | ±20V | 2120pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MN | DirectFET™ Isometric MN |
|
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Infineon Technologies |
MOSFET N-CH 100V 8.3A DIRECTFET |
2,826 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 8.3A (Ta), 47A (Tc) | 10V | 22mOhm @ 8.2A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1360pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 4.2A DIRECTFET |
8,190 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 4.2A (Ta), 19A (Tc) | 10V | 62mOhm @ 5A, 10V | 5V @ 250µA | 13nC @ 10V | ±20V | 530pF @ 25V | - | 2.2W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SH | DirectFET™ Isometric SH |
|
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Infineon Technologies |
MOSFET N-CH 80V 55A DIRECTFET |
5,346 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 15mOhm @ 12A, 10V | 4.9V @ 100µA | 31nC @ 10V | ±20V | 1320pF @ 25V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MZ | DirectFET™ Isometric MZ |
|
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Infineon Technologies |
MOSFET N-CH 30V 30A DIRECTFET |
3,438 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Ta), 150A (Tc) | 4.5V, 10V | 2.2mOhm @ 30A, 10V | 2.25V @ 250µA | 65nC @ 4.5V | ±20V | 5640pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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|
Infineon Technologies |
MOSFET N-CH 20V 32A DIRECTFET |
6,804 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71nC @ 4.5V | ±12V | 6580pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
|
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Infineon Technologies |
MOSFET N-CH 20V 32A DIRECTFET |
4,194 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 32A (Ta), 180A (Tc) | 4.5V, 10V | 1.8mOhm @ 15A, 10V | 2.5V @ 250µA | 71nC @ 4.5V | ±12V | 6580pF @ 10V | - | 2.8W (Ta), 89W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MT | DirectFET™ Isometric MT |
|
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|
ON Semiconductor |
MOSFET P-CH 20V 3.2A |
6,930 |
|
- | P-Channel | MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 6-MicroFET (2x2) | 6-VDFN Exposed Pad |
|
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|
IXYS |
MOSFET N-CH 500V 8A D2-PAK |
3,402 |
|
PolarHV™ | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Tc) | 10V | 800mOhm @ 4A, 10V | 5.5V @ 100µA | 20nC @ 10V | ±30V | 1050pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 5A PW-MOLD |
3,508 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 5A (Ta) | 4V, 10V | 160mOhm @ 2.5A, 10V | 2V @ 1mA | 12nC @ 10V | ±20V | 370pF @ 10V | - | 20W (Tc) | 150°C (TJ) | Surface Mount | PW-MOLD | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 500V 16.5A TO-3P |
3,852 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16.5A (Tc) | 10V | 380mOhm @ 8.3A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 205W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-3PN | TO-3P-3, SC-65-3 |
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ON Semiconductor |
MOSFET N-CH 500V 16A TO-220 |
2,988 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 500V | 16A (Tc) | 10V | 380mOhm @ 8A, 10V | 5V @ 250µA | 45nC @ 10V | ±30V | 1945pF @ 25V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 150V 79A TO-220 |
7,920 |
|
UniFET™ | N-Channel | MOSFET (Metal Oxide) | 150V | 79A (Tc) | 10V | 30mOhm @ 39.5A, 10V | 5V @ 250µA | 73nC @ 10V | ±30V | 3410pF @ 25V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 20V 35A I-PAK |
6,948 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 9mOhm @ 35A, 10V | 2.5V @ 250µA | 27nC @ 10V | ±20V | 1445pF @ 10V | - | 49.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 20V 35A I-PAK |
2,664 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 2480pF @ 10V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
ON Semiconductor |
MOSFET N-CH 600V 3.9A DPAK |
2,628 |
|
SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 3.9A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 5V @ 250µA | 16.6nC @ 10V | ±30V | 540pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 20V 35A DPAK |
3,186 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 9mOhm @ 35A, 10V | 2.5V @ 250µA | 27nC @ 10V | ±20V | 1445pF @ 10V | - | 49.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
ON Semiconductor |
MOSFET N-CH 20V 35A DPAK |
4,716 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 20V | 35A (Tc) | 4.5V, 10V | 5.5mOhm @ 35A, 10V | 2.5V @ 250µA | 48nC @ 10V | ±20V | 2480pF @ 10V | - | 77W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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ON Semiconductor |
MOSFET N-CH 30V 4A 8-SOIC |
2,100 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 56mOhm @ 4A, 10V | 2.5V @ 250µA | 6nC @ 10V | ±20V | 299pF @ 15V | Schottky Diode (Isolated) | 1.6W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 30V 25A POWER56 |
4,788 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 40A (Tc) | 4.5V, 10V | 2.4mOhm @ 25A, 10V | 2V @ 250µA | 113nC @ 10V | ±20V | 4345pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Renesas Electronics America |
MOSFET P-CH 160V 7A TO-3P |
5,076 |
|
- | P-Channel | MOSFET (Metal Oxide) | 160V | 7A (Ta) | 10V | - | - | - | ±15V | 900pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |