晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 778/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 110A D2PAK |
3,330 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 110A (Tc) | 10V | 3.9mOhm @ 30A, 10V | 4.5V @ 250µA | 300nC @ 10V | ±20V | 15800pF @ 25V | - | 3.75W (Ta), 375W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 200V 52A TO-220F |
7,938 |
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UniFET™ | N-Channel | MOSFET (Metal Oxide) | 200V | 52A (Tc) | 10V | 49mOhm @ 26A, 10V | 5V @ 250µA | 63nC @ 10V | ±30V | 2900pF @ 25V | - | 38.5W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
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Vishay Siliconix |
MOSFET N-CH 200V 36A D2PAK |
6,156 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 36A (Tc) | 10V, 15V | 53mOhm @ 20A, 15V | 4.5V @ 250µA | 127nC @ 15V | ±25V | 3100pF @ 25V | - | 3.12W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 150V 41A D2PAK |
5,346 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 41A (Tc) | 10V | 45mOhm @ 25A, 10V | 4.5V @ 250µA | 107nC @ 10V | ±30V | 2260pF @ 25V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK |
5,418 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
5,976 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 25V 15A DIRECTFET |
4,968 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 59A (Tc) | 4.5V, 10V | 6.3mOhm @ 15A, 10V | 2.35V @ 25µA | 17nC @ 4.5V | ±20V | 1450pF @ 13V | - | 2.2W (Ta), 34W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ SQ | DirectFET™ Isometric SQ |
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Infineon Technologies |
MOSFET N-CH 30V 5.6A MICRO8 |
2,100 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 5.6A (Ta) | 4.5V, 10V | 35mOhm @ 3.7A, 10V | 1V @ 250µA | 27nC @ 10V | ±20V | 520pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.2A MICRO8 |
6,102 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.2A (Ta) | 2.5V, 4.5V | 20mOhm @ 7A, 4.5V | 1.2V @ 250µA | 45nC @ 5V | ±12V | 2520pF @ 10V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Vishay Siliconix |
MOSFET N-CH 200V 9A D2PAK |
6,570 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 6V, 10V | 270mOhm @ 5A, 10V | 4V @ 250µA | 17nC @ 10V | ±20V | 580pF @ 25V | - | 3.75W (Ta), 60W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 110A D2PAK |
7,974 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 110A (Tc) | 10V | 5.3mOhm @ 30A, 10V | 5V @ 250µA | 95nC @ 10V | ±20V | 6700pF @ 25V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 18A D2PAK |
5,184 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 18A (Tc) | 10V | 165mOhm @ 14A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 1950pF @ 25V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 150V 23A D2PAK |
6,588 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 23A (Tc) | 6V, 10V | 73mOhm @ 15A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 1290pF @ 25V | - | 3.75W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 200V 27A D2PAK |
7,938 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 27A (Tc) | 6V, 10V | 78mOhm @ 20A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2150pF @ 25V | - | 3.75W (Ta), 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 40A D2PAK |
4,842 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 40A (Tc) | 6V, 10V | 30mOhm @ 15A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2400pF @ 25V | - | 3.75W (Ta), 107W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 150V 40A D2PAK |
4,572 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 40A (Tc) | 6V, 10V | 38mOhm @ 15A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 2500pF @ 25V | - | 3.75W (Ta), 166W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 100V 47A D2PAK |
3,996 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 47A (Tc) | 4.5V, 10V | 24mOhm @ 40A, 10V | 3V @ 250µA | 60nC @ 10V | ±20V | 2400pF @ 25V | - | 3.75W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V 50A D2PAK |
3,330 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 50A (Tc) | 4.5V, 10V | 16mOhm @ 20A, 10V | 3V @ 250µA | 40nC @ 10V | ±20V | 1325pF @ 25V | - | 3.7W (Ta), 93W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 75V 90A D2PAK |
6,588 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 75V | 90A (Tc) | 8V, 10V | 4.8mOhm @ 20A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 6460pF @ 40V | - | 3.75W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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ON Semiconductor |
MOSFET N-CH 40V 80A TO-262 |
7,524 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 23A (Ta), 80A (Tc) | 10V | 2.9mOhm @ 80A, 10V | 4V @ 250µA | 235nC @ 10V | ±20V | 12200pF @ 25V | - | 254W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I²Pak, TO-262AA |
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ON Semiconductor |
MOSFET N-CH 40V 80A TO-220AB |
2,844 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 40V | 20A (Ta), 80A (Tc) | 10V | 3.5mOhm @ 80A, 10V | 4V @ 250µA | 185nC @ 10V | ±20V | 9310pF @ 25V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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ON Semiconductor |
MOSFET N-CH 30V 28A POWER56 |
8,154 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 2.1mOhm @ 28A, 10V | 3V @ 1mA | 83nC @ 10V | ±20V | 5865pF @ 15V | - | 2.5W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 28A POWER56 |
2,088 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 49A (Tc) | 4.5V, 10V | 2mOhm @ 28A, 10V | 3V @ 250µA | 100nC @ 10V | ±20V | 6420pF @ 15V | - | 2.5W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 23A POWER56 |
8,118 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 42A (Tc) | 4.5V, 10V | 3mOhm @ 23A, 10V | 3V @ 1mA | 55nC @ 10V | ±20V | 3615pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 18A POWER56 |
5,022 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 28A (Tc) | 4.5V, 10V | 5mOhm @ 18A, 10V | 3V @ 1mA | 40nC @ 10V | ±20V | 2600pF @ 15V | - | 2.5W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 30V 17A POWER56 |
8,010 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 17A (Ta), 21A (Tc) | 4.5V, 10V | 5mOhm @ 17A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 2320pF @ 15V | - | 2.5W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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Diodes Incorporated |
MOSFET N-CH 20V 2.3A SOT23-3 |
7,398 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 2.3A (Ta) | 1.5V, 4.5V | 70mOhm @ 3A, 4.5V | 1V @ 250µA | - | ±12V | 217pF @ 10V | - | 600mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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IXYS |
MOSFET N-CH 100V 350A SOT-227B |
5,310 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 350A (Tc) | 10V | 2.5mOhm @ 175A, 10V | 4V @ 3mA | 640nC @ 10V | ±20V | 27000pF @ 25V | - | 830W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3 |
7,812 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 100V | 100A (Tc) | 10V | 4.2mOhm @ 100A, 10V | 4V @ 250µA | 210nC @ 10V | ±20V | 13800pF @ 50V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 44A TDSON-8 |
8,730 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta), 44A (Tc) | 4.5V, 10V | 10mOhm @ 30A, 10V | 2.2V @ 250µA | 17nC @ 10V | ±20V | 1500pF @ 15V | - | 2.5W (Ta), 30W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |