晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 782/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Rohm Semiconductor |
MOSFET N-CH 500V 8A TO-220FM |
3,798 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8A (Ta) | 10V | 850mOhm @ 4A, 10V | 4V @ 1mA | 28nC @ 10V | ±30V | 920pF @ 25V | - | 40W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 600V 10A TO-220FM |
6,066 |
|
- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 650mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 1600pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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Rohm Semiconductor |
MOSFET N-CH 500V 12A TO-220FM |
6,120 |
|
- | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 500mOhm @ 6A, 10V | 4V @ 1mA | 45nC @ 10V | ±30V | 1600pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
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|
Rohm Semiconductor |
MOSFET N-CH 30V 7A 8-SOIC |
5,526 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 7A (Ta) | - | 28mOhm @ 7A, 10V | - | 11.6nC @ 5V | - | 900pF @ 10V | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Rohm Semiconductor |
MOSFET N-CH 30V 10A 8-SOIC |
8,568 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Rohm Semiconductor |
MOSFET N-CH 30V 11A 8-SOIC |
3,816 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4V, 10V | 12.6mOhm @ 11A, 10V | 2.5V @ 1mA | 33nC @ 5V | ±20V | 2000pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 30V 12.5A 8-SOIC |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 12.5A (Ta) | - | 10mOhm @ 12.5A, 10V | - | 40.5nC @ 15V | - | 2300pF @ 10V | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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|
Rohm Semiconductor |
MOSFET N-CH 30V 13A 8-SOIC |
3,906 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | - | 9.5mOhm @ 13A, 10V | - | 45nC @ 5V | - | 2600pF @ 10V | - | - | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Rohm Semiconductor |
MOSFET P-CH 45V 6A 8-SOIC |
5,922 |
|
- | P-Channel | MOSFET (Metal Oxide) | 45V | 6A (Ta) | 4V, 10V | 36mOhm @ 6A, 10V | - | 32.2nC @ 5V | ±20V | 2700pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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Rohm Semiconductor |
MOSFET N-CH 60V 6.5A 8-SOIC |
7,614 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 6.5A (Ta) | 4V, 10V | 37mOhm @ 6.5A, 10V | 2.5V @ 1mA | 16nC @ 5V | 20V | 900pF @ 10V | - | 2W (Ta) | 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET N-CH 45V 7A 8-SOIC |
4,410 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | - | 16.8nC @ 5V | 20V | 1000pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
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Rohm Semiconductor |
MOSFET P-CH 45V 7A 8-SOIC |
8,010 |
|
- | P-Channel | MOSFET (Metal Oxide) | 45V | 7A (Ta) | 4V, 10V | 27mOhm @ 7A, 10V | - | 47.6nC @ 5V | ±20V | 4100pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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|
Rohm Semiconductor |
MOSFET N-CH 45V 8.5A 8-SOIC |
5,346 |
|
- | N-Channel | MOSFET (Metal Oxide) | 45V | 8.5A (Ta) | 4V, 10V | 18mOhm @ 8.5A, 10V | - | 21.4nC @ 5V | 20V | 1500pF @ 10V | - | 2W (Ta) | - | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
|
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Diodes Incorporated |
MOSFET N-CH 20V 4A DFN-2X2 |
5,202 |
|
- | N-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 2.5V, 4.5V | 60mOhm @ 2.5A, 4.5V | 1.5V @ 250µA | 2.8nC @ 4.5V | ±12V | 277pF @ 10V | - | 1.35W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | DFN322 | 3-VDFN |
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Infineon Technologies |
MOSFET N-CH 20V 75A DPAK |
2,304 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 75A (Tc) | 2.8V, 10V | 9mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2410pF @ 10V | - | 88W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A MICRO-8 |
7,416 |
|
FETKY™ | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | 2.5V, 4.5V | 55mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 15nC @ 5V | ±12V | 1066pF @ 10V | Schottky Diode (Isolated) | 1.25W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro8™ | 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) |
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Infineon Technologies |
MOSFET N-CH 100V 9.4A DPAK |
8,874 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 9.4A (Ta) | 10V | 210mOhm @ 5.6A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 330pF @ 25V | - | 48W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 43A DPAK |
4,788 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 43A (Tc) | 4.5V, 10V | 13.8mOhm @ 15A, 10V | 2.25V @ 250µA | 11nC @ 4.5V | ±20V | 780pF @ 15V | - | 40W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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Infineon Technologies |
MOSFET P-CH 55V 31A DPAK |
2,106 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 31A (Tc) | 10V | 65mOhm @ 16A, 10V | 4V @ 250µA | 63nC @ 10V | ±20V | 1200pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 64A DPAK |
4,878 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 10.5mOhm @ 15A, 10V | 2.5V @ 250µA | 31nC @ 4.5V | ±12V | 2260pF @ 15V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 40V 42A IPAK |
7,560 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 42A (Tc) | 10V | 5.5mOhm @ 42A, 10V | 4V @ 250µA | 89nC @ 10V | ±20V | 2950pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | I-PAK (LF701) | TO-252-4, DPak (3 Leads + Tab) |
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Infineon Technologies |
MOSFET N-CH 30V 11A 8-SOIC |
4,248 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 11.9mOhm @ 11A, 10V | 2.35V @ 25µA | 9.3nC @ 4.5V | ±20V | 760pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 20V 12A 8-SOIC |
6,426 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 12A (Ta) | 2.8V, 10V | 9mOhm @ 12A, 10V | 2V @ 250µA | 35nC @ 4.5V | ±12V | 2480pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 260A D2PAK |
6,120 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 260A (Tc) | 4.5V, 10V | 3mOhm @ 38A, 10V | 2.5V @ 250µA | 110nC @ 4.5V | ±20V | 5890pF @ 15V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 86A IPAK |
4,410 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 86A (Tc) | 4.5V, 10V | 6.5mOhm @ 15A, 10V | 2.25V @ 250µA | 26nC @ 4.5V | ±20V | 2330pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Short Leads, IPak, TO-251AA |
|
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|
Infineon Technologies |
MOSFET N-CH 100V 88A D2PAK |
5,112 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 88A (Tc) | 10V | 10mOhm @ 58A, 10V | 4V @ 150µA | 180nC @ 10V | ±20V | 5150pF @ 50V | - | 200W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
Infineon Technologies |
MOSFET P-CH 150V 13A DPAK |
6,768 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 150V | 13A (Tc) | - | 295mOhm @ 6.6A, 10V | 4V @ 250µA | 66nC @ 10V | - | 860pF @ 25V | - | 110W (Tc) | - | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
|
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|
Infineon Technologies |
MOSFET N-CH 20V 180A D2PAK |
3,654 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 5A SOT-223 |
7,884 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 5A (Tc) | 4.5V, 10V | 60mOhm @ 3A, 10V | 3V @ 250µA | 11nC @ 5V | ±16V | 380pF @ 25V | - | 1W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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|
Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
5,724 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.35V @ 25µA | 12nC @ 4.5V | ±20V | 1040pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |