晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 807/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Siliconix |
MOSFET N-CH 60V 6.3A 1212-8 |
6,174 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 6.3A (Ta) | 4.5V, 10V | 19mOhm @ 10A, 10V | 3.5V @ 250µA | 45nC @ 10V | ±20V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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Vishay Siliconix |
MOSFET N-CH 20V 13A PPAK SO-8 |
8,496 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 13A (Ta) | 4.5V, 10V | 5.5mOhm @ 20A, 10V | 3V @ 250µA | 25nC @ 4.5V | ±20V | - | - | 1.7W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Vishay Siliconix |
MOSFET P-CH 20V 7.5A 1212-8 |
2,016 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 7.5A (Ta) | 1.8V, 4.5V | 19mOhm @ 11.4A, 4.5V | 1V @ 300µA | 41nC @ 4.5V | ±8V | - | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
|
|
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Vishay Siliconix |
MOSFET P-CH 30V 13A PPAK SO-8 |
3,600 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 13A (Ta) | 10V | 6.8mOhm @ 22A, 10V | 3V @ 250µA | 170nC @ 10V | ±25V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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|
Vishay Siliconix |
MOSFET P-CH 30V 14A PPAK SO-8 |
4,698 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 5.7mOhm @ 24A, 10V | 3V @ 250µA | 180nC @ 10V | ±20V | - | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 20V 12.5A PPAK SO-8 |
8,442 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12.5A (Ta) | 1.8V, 4.5V | 7.3mOhm @ 20A, 4.5V | 900mV @ 1mA | 150nC @ 5V | ±8V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
|
|
Vishay Siliconix |
MOSFET P-CH 20V 12A SC70-6 |
7,128 |
|
TrenchFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 12A (Tc) | 1.5V, 4.5V | 30mOhm @ 5.9A, 4.5V | 1V @ 250µA | 38nC @ 8V | ±8V | 1200pF @ 10V | - | 3.5W (Ta), 19W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SC-70-6 Single | PowerPAK® SC-70-6 |
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Infineon Technologies |
MOSFET N-CH 240V .11A SOT-23 |
2,394 |
|
SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 110mA (Ta) | 4.5V, 10V | 14Ohm @ 100mA, 10V | 1.8V @ 56µA | 3.1nC @ 10V | ±20V | 77pF @ 25V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-220-3 |
4,392 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6.5mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO-220-3 |
7,380 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO-220-3 |
7,236 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 11.4mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 20A TO-220-3 |
3,528 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 14.7mOhm @ 20A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
8,280 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 3.1mOhm @ 30A, 10V | 2.2V @ 250µA | 51nC @ 10V | ±20V | 5300pF @ 15V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 90A TO251-3 |
2,304 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38nC @ 10V | ±20V | 3900pF @ 15V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
3,636 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO251-3 |
8,280 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
|
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Infineon Technologies |
MOSFET N-CH 30V 40A TO251-3 |
8,316 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 35A TO251-3 |
3,526 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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Infineon Technologies |
MOSFET N-CH 30V 30A TO251-3 |
2,430 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Stub Leads, IPak |
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|
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Infineon Technologies |
MOSFET N-CH 30V 50A IPAK |
2,502 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31nC @ 10V | ±20V | 3200pF @ 15V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 30V 50A TO-251-3 |
3,600 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 6mOhm @ 30A, 10V | 2.2V @ 250µA | 23nC @ 10V | ±20V | 2400pF @ 15V | - | 56W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
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Infineon Technologies |
MOSFET N-CH 30V 40A TO-251-3 |
3,780 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 40A (Tc) | 4.5V, 10V | 9mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Infineon Technologies |
MOSFET N-CH 30V 35A IPAK |
8,424 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 10.5mOhm @ 30A, 10V | 2.2V @ 250µA | 14nC @ 10V | ±20V | 1500pF @ 15V | - | 38W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
|
Infineon Technologies |
MOSFET N-CH 30V 30A TO-251-3 |
7,056 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 13.5mOhm @ 30A, 10V | 2.2V @ 250µA | 10nC @ 10V | ±20V | 1000pF @ 15V | - | 31W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | PG-TO251-3 | TO-251-3 Short Leads, IPak, TO-251AA |
|
|
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Infineon Technologies |
MOSFET N-CH 30V 35A TO-263-3 |
5,472 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 35A (Tc) | 4.5V, 10V | 9.6mOhm @ 30A, 10V | 2.2V @ 250µA | 15nC @ 10V | ±20V | 1600pF @ 15V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D²PAK (TO-263AB) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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|
ON Semiconductor |
MOSFET N-CH 150V 20A TO220AB |
7,668 |
|
- | N-Channel | MOSFET (Metal Oxide) | 150V | 20A (Tc) | 10V | 130mOhm @ 10A, 10V | 4V @ 250µA | 55.9nC @ 10V | ±20V | 1627pF @ 25V | - | 112W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
|
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ON Semiconductor |
MOSFET N-CH 60V 120A D2PAK |
2,466 |
|
- | N-Channel | MOSFET (Metal Oxide) | 60V | 120A (Tc) | 10V | 6mOhm @ 60A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 5800pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
|
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ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK |
7,632 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A IPAK |
6,876 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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ON Semiconductor |
MOSFET N-CH 25V 11.2A DPAK |
5,004 |
|
- | N-Channel | MOSFET (Metal Oxide) | 25V | 11.2A (Ta), 73A (Tc) | - | 6.2mOhm @ 30A, 10V | 2.5V @ 250µA | 19.2nC @ 4.5V | - | 1563pF @ 12V | - | 1.3W (Ta), 54.5W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |