晶體管-FET，MOSFET-單
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類別半導體 / 晶體管 / 晶體管-FET，MOSFET-單
記錄 29,970
頁面 895/999
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | FET類型 | 技術 | 漏極至源極電壓（Vdss） | 電流-25°C時的連續漏極（Id） | 驅動電壓（Max Rds On，Min Rds On） | Rds On（Max）@ Id，Vgs | Vgs（th）（最大）@ ID | 門電荷（Qg）（最大值）@ Vgs | Vgs（最大） | 輸入電容（Ciss）（最大值）@ Vds | FET功能 | 功耗（最大值） | 工作溫度 | 安裝類型 | 供應商設備包裝 | 包裝/箱 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GeneSiC Semiconductor |
TRANS SJT 650V 15A TO-257 |
4,086 |
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- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 15A (Tc) (155°C) | - | 105mOhm @ 15A | - | - | - | 1534pF @ 35V | - | 172W (Tc) | -55°C ~ 225°C (TJ) | Through Hole | TO-257 | TO-257-3 |
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GeneSiC Semiconductor |
TRANS SJT 650V 16A TO276 |
8,208 |
|
- | - | SiC (Silicon Carbide Junction Transistor) | 650V | 16A (Tc) (155°C) | - | 105mOhm @ 16A | - | - | - | 1534pF @ 35V | - | 330W (Tc) | -55°C ~ 225°C (TJ) | Surface Mount | TO-276 | TO-276AA |
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Vishay Siliconix |
MOSFET N-CH 30V 38.3A 1212-8 |
8,694 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38.3A (Tc) | 4.5V, 10V | 7.5mOhm @ 10A, 10V | 2.4V @ 250µA | 21.5nC @ 10V | +20V, -16V | 1000pF @ 15V | - | 3.2W (Ta), 19.8W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
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|
Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
8,316 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 2.4mOhm @ 15A, 10V | 2.3V @ 250µA | 84nC @ 10V | ±20V | 4155pF @ 20V | - | 4.8W (Ta), 41.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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|
ON Semiconductor |
MOSFET N-CH 30V 1.8A 6MICROFET |
2,916 |
|
PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 1.8A (Ta) | 2.5V, 4.5V | 299mOhm @ 1.6A, 4.5V | 1.5V @ 250µA | 1.4nC @ 4.5V | ±12V | 75pF @ 15V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 6-MicroFET (1.6x1.6) | 6-UFDFN Exposed Pad |
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Infineon Technologies |
MOSFET N-CH 40V 22A TSDSON-8 |
6,426 |
|
OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 40A (Tc) | 4.5V, 10V | 2.35mOhm @ 20A, 10V | 2V @ 250µA | 37nC @ 10V | ±20V | 2630pF @ 20V | - | 2.1W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8-FL | 8-PowerTDFN |
|
|
|
Infineon Technologies |
MOSFET N-CH 500V 5A PG-TO220 FPK |
5,382 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 13V | 800mOhm @ 1.5A, 13V | 3.5V @ 130µA | 12.4nC @ 10V | ±20V | 280pF @ 100V | Super Junction | 26.4W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A TO220FP |
2,718 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2nC @ 10V | ±20V | 1137pF @ 100V | Super Junction | 32W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 500V 6.1A TO220FP |
8,010 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | Super Junction | 27.2W (Tc) | -40°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 500V 9.9A TO220FP |
3,078 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 9.9A (Tc) | 13V | 380mOhm @ 3.2A, 13V | 3.5V @ 260µA | 24.8nC @ 10V | ±20V | 584pF @ 100V | Super Junction | 29.2W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 500V 18.5A TO247 |
2,664 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 18.5A (Tc) | 13V | 190mOhm @ 6.2A, 13V | 3.5V @ 510µA | 47.2nC @ 10V | ±20V | 1137pF @ 100V | Super Junction | 127W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
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Infineon Technologies |
MOSFET N CH 500V 6.1A PG-TO252 |
3,996 |
|
CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 500V | 6.1A (Tc) | 13V | 650mOhm @ 1.8A, 13V | 3.5V @ 150µA | 15nC @ 10V | ±20V | 342pF @ 100V | - | 47W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Alpha & Omega Semiconductor |
MOSFET N-CH 30V 23A DFN5X6 |
5,562 |
|
- | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 30A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 22.5nC @ 10V | ±20V | 951pF @ 15V | - | 4.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Alpha & Omega Semiconductor |
MOSFET N-CH 40V 22A DFN5X6 |
8,514 |
|
- | N-Channel | MOSFET (Metal Oxide) | 40V | 22A (Ta), 32A (Tc) | 4.5V, 10V | 4.8mOhm @ 20A, 10V | 2.4V @ 250µA | 35nC @ 10V | ±20V | 2200pF @ 20V | - | 4.2W (Ta), 35.7W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
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Infineon Technologies |
MOSFET N CH 40V 195A D2PAK-7PIN |
4,266 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7437pF @ 25V | - | 231W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (7-Lead) | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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Infineon Technologies |
MOSFET N CH 40V 90A DPAK |
6,408 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 90A (Tc) | 6V, 10V | 2.4mOhm @ 90A, 10V | 3.9V @ 100µA | 134nC @ 10V | ±20V | 4610pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N CH 40V 85A PQFN 5X6 |
7,380 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 3.3mOhm @ 50A, 10V | 3.9V @ 100µA | 98nC @ 10V | ±20V | 3174pF @ 25V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
|
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Infineon Technologies |
MOSFET N CH 40V 195A D2PAK |
3,580 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 195A (Tc) | 6V, 10V | 1.8mOhm @ 100A, 10V | 3.9V @ 150µA | 225nC @ 10V | ±20V | 7330pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 40V 120A D2PAK |
5,706 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 120A (Tc) | 6V, 10V | 2.5mOhm @ 100A, 10V | 3.9V @ 100µA | 135nC @ 10V | ±20V | 4730pF @ 25V | - | 208W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N CH 200V 3.7A 8-SO |
7,560 |
|
HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 3.7A (Ta) | 10V | 78mOhm @ 2.2A, 10V | 5V @ 100µA | 44nC @ 10V | ±20V | 1750pF @ 100V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 85A 8PQFN |
4,302 |
|
HEXFET®, StrongIRFET™ | N-Channel | MOSFET (Metal Oxide) | 40V | 85A (Tc) | 6V, 10V | 2.4mOhm @ 50A, 10V | 3.9V @ 100µA | 138nC @ 10V | ±20V | 4574pF @ 25V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
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ON Semiconductor |
MOSFET N-CH 25V 28A PQFN |
6,912 |
|
PowerTrench®, SyncFET™ | N-Channel | MOSFET (Metal Oxide) | 25V | 28A (Ta), 60A (Tc) | 4.5V, 10V | 2.8mOhm @ 28A, 10V | 2.2V @ 1mA | 42nC @ 10V | ±12V | 2825pF @ 13V | Schottky Diode (Body) | 3.3W (Ta), 59W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | Dual Cool™56 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET P-CH 30V 22A DIRECTFET |
2,484 |
|
HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.9mOhm @ 22A, 10V | 2.4V @ 150µA | 130nC @ 10V | ±20V | 7305pF @ 15V | - | 2.1W (Ta), 113W (Tc) | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET™ MX | DirectFET™ Isometric MX |
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IXYS |
MOSFET N-CH 4500V 0.2A TO263 |
7,794 |
|
- | N-Channel | MOSFET (Metal Oxide) | 4500V | 200mA (Tc) | 10V | 750Ohm @ 10mA, 10V | 6.5V @ 250µA | 10.4nC @ 10V | ±20V | 256pF @ 25V | - | 113W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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IXYS |
MOSFET N-CH 4000V 300MA I4PAK |
7,956 |
|
- | N-Channel | MOSFET (Metal Oxide) | 4000V | 300mA (Tc) | 10V | 300Ohm @ 150mA, 10V | 4V @ 250µA | 16.3nC @ 10V | ±20V | 435pF @ 25V | - | 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | ISOPLUS i4-PAC™ | i4-Pac™-5 (3 Leads) |
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IXYS |
MOSFET N-CH 2500V 0.2A TO263 |
8,622 |
|
- | N-Channel | MOSFET (Metal Oxide) | 2500V | 200mA (Tc) | 10V | 450Ohm @ 50mA, 10V | 4.5V @ 250µA | 7.4nC @ 10V | ±20V | 116pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (IXTA) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 40V 60A PPAK SO-8 |
3,294 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 60A (Tc) | 4.5V, 10V | 1.7mOhm @ 20A, 10V | 2.3V @ 250µA | 113nC @ 10V | ±20V | 4930pF @ 20V | - | 6.25W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
|
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Vishay Siliconix |
MOSFET N-CH 30V 11A PPAK SO-8 |
5,022 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 8mOhm @ 18A, 10V | 3V @ 250µA | 18nC @ 4.5V | ±20V | - | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 60V TO252 |
484 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 60V | - | 4.5V, 10V | 31mOhm @ 15A, 10V | 3V @ 250µA | 17nC @ 10V | ±20V | 670pF @ 25V | - | 3W (Ta), 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 55V 35A TO252 |
36,405 |
|
TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 35A (Tc) | 4.5V, 10V | 20mOhm @ 20A, 10V | 1V @ 250µA (Min) | 13nC @ 5V | ±20V | 885pF @ 25V | - | 7.5W (Ta), 50W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |