Diodes New MOSFET from board height halved

     Diodes Incorporated introduces a range of high-efficiency N-channel and P-channel MOSFETs in thin DFN2020-6 packages. DFN2020H4 package DMP2039UFDE4, the height from the board is only 0.4 mm, the board area is only four square millimeters, is a P-channel device with a fixed voltage of -25V, the volume is 50% thinner than similar devices. The other MOSFETs in the same series using the DFN2020E package have a 0.5 mm off-board height, which is 20% thinner than other MOSFETs with a general off-board height of 0.6 mm.

     The DMP2039UFDE4 is targeted at load switching applications and provides circuit designers with 3kV circuit protection against electrostatic discharge from the human body itself. These newly introduced MOSFETs feature low typical RDS(on), such as -12V p-channel DMP1022UFDE, which is only 13mΩ at 4.5V VGS, minimizing conduction losses for battery charging applications.

     The 20V N-channel DMN2013UFDE makes an ideal load switch or high speed switch in DC/DC buck and boost converters and provides high electrostatic discharge protection up to 2kV. The DMN6040UFDE will be one of the first high-voltage MOSFETs in the DFN2020 package, operating at 60V VDS. It is suitable for Small form-factor industrial design and heating ventilation and air conditioning system (HVAC) control.

     The new products are particularly suitable for use in the design of extremely slim portable products such as smartphones, tablets and digital cameras. The first nine MOSFETs include P-channel MOSFETs of -12V, -20V, -25V and -40V, and N-channel MOSFETs of 12V, 20V and 60V.