Micron Intel introduces new 3D NAND flash memory

     Micron Technology and Intel Corporation have jointly developed the world's densest 3D NAND flash memory technology. Flash memory is the storage technology used in the lightest laptops, the fastest data centers, and almost all phones, tablets, and mobile devices.

     This latest 3D NAND technology, developed by Intel and Micron, vertically stacks multiple layers of data storage units with remarkable precision, making storage devices three times more powerful than those built by competing NAND technologies [1]. The technology enables more storage in a smaller space, delivering significant cost savings, reduced power consumption and improved performance for many consumer mobile devices and the most demanding enterprise deployments.

     Planar NAND flash memory is nearing the limits of its expansion, creating a huge challenge for the storage industry. By keeping flash storage solutions and Moore's Law consistent, 3D NAND technology will drive wider adoption of flash memory and have a huge impact.

     Brian Shirley, vice president of Storage Technology and Solutions at Micron Technology, said: "Micron's partnership with Intel has resulted in industry-leading solid-state storage technology that delivers extreme density, performance and efficiency unmatched by any other flash memory today. This 3D NAND technology has the potential to revolutionize the market. "From smartphones all the way to flash optimized supercomputing, the impact flash memory has had so far is just the beginning."

     "Intel and Micron's development achievements demonstrate our ongoing commitment to bring leading and innovative non-volatile storage technologies to the market. Our new 3D NAND technology innovation represents a significant advance in both density and cost and will accelerate the adoption of solid-state storage in computing platforms." Said Rob Crooke, senior vice president and general manager of Intel's non-volatile Storage Solutions Group.