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ON Semiconductor introduces a full line of double data Rate (DDR) terminal regulators

六月 14 2015 2015-06 Semiconductors ON Semiconductor
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ON Semiconductor further strengthens its Low Voltage drop (LDO) linear regulator portfolio with a new series of high-performance devices to support double data rate (DDR) memory. The NCP51200, NCP51400, NCP51510 and NCP51199 feature built-in power MOSFETs for a wide range of applications in the computer, data networking, industrial and handheld consumer markets

     ON Semiconductor further strengthens its Low Voltage drop (LDO) linear regulator portfolio with a new series of high-performance devices to support double data rate (DDR) memory. NCP51200, NCP51400, NCP51510 and NCP51199 use built-in power MOSFETs, Specific applications such as SDRAM DIMM memory, servers, routers, smartphones, tablet platforms, set-top boxes, smart TVS, printers and PC/laptop motherboards are targeted for a wide range of applications in computer, data networking, industrial and handheld consumer markets. AEC-Q100 certified versions are also available for automotive applications such as embedded GPS positioning systems, infotainment and wireless networking and Bluetooth communication.

     These high-performance Ldos support DDR1, DDR2, DDR3, LPDDR3, DDR4, and LPDDR4 standards with terminal voltage (VTT) as low as 500 millivolts (mV). When used with DDR4 and LPDDR4, each has an active source current and drain capacity of 2 amps (A). In addition, the NCP51145 can support up to 1.2A when using DDR4 and LPDDR4. The NCP/NCV51199 provides 2 A and 1.5 A source drawdown for DDR2 and DDR3, respectively, while the NCP51200 and NCP51510 are specified to operate at 3 A peak current and support remote sensing. The benefits of these highly integrated DDR terminal Ldos also include soft start, on-chip thermal shutdown, and (for some devices) undervoltage locking mechanisms. Each device has high-speed differential amplifiers that provide ultra-fast responses to linear voltage and load current transients. All of these devices are also compatible with DDR1 and DDR2, making it easy to upgrade to newer DDR memory. The operating temperature range is specified from -40 °C to +125 °C, which can be extended to +150 °C for automotive versions.

     Simon Keeton, Vice President of Integrated Circuit Products at On Semiconductor, said: "The widespread expansion of DDR memory into many non-traditional products such as connectivity and the Internet of Things (IoT) is enabling enhanced data communication. We now offer a comprehensive range of transformational devices for the entire DDR market, suitable for new design projects and direct replacement of existing devices. But with higher performance to support future memory upgrades. The NCP51400 and NCP51510 are advanced integrated circuits (ics) that support the next generation of DDR technology, while the NCP51145 combines superior performance with an attractive price point. In addition, we offer an Automotive Certified (AEC-Q100) version that enables the latest infotainment and safety systems to keep up with the data requirements expected by new vehicle customers.

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