STMicroelectronics extends MasterGaN portfolio with new 200W and 500W devices

     MasterGaN1L and MasterGaN4L from STMicroelectronics represent the next iteration of integrated gallium nitride (GaN) bridge devices that streamline the design of power supplies by utilizing wide-bandgap technology to meet the most recent ecodesign objectives.

     The MasterGaN family from ST comprises high electron-mobility transistors (HEMT) made of 650V GaN. It includes system protection, optimized gate drivers, and an integrated bootstrap diode that supplies power to the device during initialization. This feature integration eliminates the need for designers to address the intricate gate-drive specifications of GaN transistors. The devices, which are contained in a small power container, also improve dependability, reduce the cost of materials, and simplify circuit layout.

     Two GaN HEMTs are integrated in the most recent devices in a half-bridge configuration. The configuration is appropriate for constructing adapters, chargers, and switched-mode power supplies featuring active-clamp flyback, active-clamp forward, and resonant converter topologies. Pin compatibility exists between the MasterGaN1L and MasterGaN4L and the MasterGaN1 and MasterGaN4, respectively. In resonant topologies in particular, their newly optimized turn-on latency enables them to operate at a higher frequency and with greater efficiency at low load than their predecessors.

     The inputs are capable of receiving signal voltages ranging from 3.3V to 15V. Hysteresis and pull-down mechanisms enable direct connection to a controlling device, including but not limited to a microcontroller, DSP, or Hall-effect sensors. A dedicated shutoff pin aids in power conservation for system designers, while an interlocking circuit between the two GaN HEMTs ensures that cross-conduction conditions are prevented.