The new ICeGaN GaN power ic promotes the highest level of efficiency

     Cambridge GaN Devices has introduced the lowest ever on-resistance (RDS) component in a new mold and package that delivers the benefits of GaN for high-power applications such as data centers, inverters, motor drives and other industrial power supplies. The new ICeGaN P2 series ics have RDS(on) levels as low as 25mOhm to support multiple kw power levels with maximum efficiency.

     Andrea Bricconi, CGD's Chief Commercial Officer, said: "The explosion of artificial intelligence has led to a significant increase in energy consumption, prompting data center system designers to prioritize the use of Gans for high-power, efficient power solutions. This new line of power GaN ics is a stepping stone for CGD to support our customers and partners by achieving and exceeding 100kW/ rack power density in the data center, meeting the requirements of the latest TDP(Thermal Design Power) trends for high-density computing. As for motor control inverters, developers are looking for Gans to reduce heat to achieve smaller, longer-lasting system power. These are just two examples of how CGD is aggressively targeting the market for these new high-power icgan ics. The simplified gate driver design and reduced system cost, combined with an advanced high-performance package, make the P2 series ics an excellent choice for these applications."

     ICeGaN integrated circuits include on-chip Miller clamp to eliminate penetration losses during fast switching and achieve 0V shut-off to minimize reverse conduction losses, which outperforms discrete e-Mode GaN and other prior art technologies. The new package offers higher thermal resistance performance as low as 0.28K/W - again, equal to or better than any other product on the market today - and the two-door pins in the double-sided DHDFN-9-1(Dual Cooling DFN) package enable optimal PCB layout and simple parallel scaling, allowing customers to easily address multi-kilowatt applications. The new packaging has also been designed to increase productivity and can be wet flanked to simplify optical inspection.

     The new series is under sample. The series includes four devices with RDS(on) levels of 25mOhm and 55mOhm and voltage ratings of 60A and 27A in 10mm x 10mm size DHDFN-9-1 and BHDFN-9-1(bottom radiator DFN) packages. As with all CGD ICeGaN products, this series can be driven with any standard MOSFET or IGBT driver.

     Two demo boards feature new P2 devices: one is a single support board for a three-phase automotive inverter demo board developed in collaboration with IFP Energies nouvelles, a French public R&I institute, and the other is a 3kW sign bar power factor correction demo board.