Vishay introduces the new 650 V E-Series power MOSFETs with industry-leading performance levels

     Vishay Intertechnology today announced the introduction of a new fourth-generation 650 V E-series power MOSFEt-SIHP054N65E to improve energy efficiency and power density for communications, industrial and computing applications. The Vishay Siliconix N-channel SiHP054N65E on-resistance is 48.2% lower than the previous device, while the on-resistance and gate charge product is 59% lower, which is an important optimization factor (FOM) for 650 V MOSFETs in power conversion applications.

     Vishay's extensive MOSFET technology fully supports the power conversion process, covering a wide range of advanced high-tech equipment requiring high voltage input to low voltage output. With the introduction of the SiHP054N65E and the release of other fourth-generation 600 V E-series devices, Vishay can meet both energy efficiency and power density requirements at the beginning of the design of the power system architecture, including power factor correction (PFC) and the DC/DC converter brick power supply. Typical applications include servers, edge computing, and data storage; UPS; High intensity discharge (HID) lamps and fluorescent ballasts; Solar inverter; Welding equipment; Induction heating; Motor drive; And a battery charger.

     The SiHP054N65E uses Vishay's advanced energy efficient E-Series super junction technology with a typical on-resistance of just 0.051Ω at 10V, increasing the rated power to support a wide range of applications above 2 kW, and the device meets the requirements of the Open Rack V3 (ORV3) standard of the Open Compute Project. In addition, the ultra-low gate charge of this MOSFET drops to 72nC. The FOM of the device is 3.67Ω *nC, which is 1.1% lower than the similar competitive MOSFET. These parameters indicate reduced on-off and switching losses, resulting in energy savings and improved energy efficiency. The device meets the special requirements of the titanium effect of the server power supply, or the communication power supply achieves a peak efficiency of 96%.

     The effective output capacitance Co(er) and Co(tr) typical values of the MOSFET are only 115 pF and 772 pF, respectively, which improves switching performance in hard switching topologies such as PFC, half-bridge, and two-switch forward designs. The product of resistance and Co(tr) FOM of the device is as low as 5.87 *pF to reach the advanced level in the industry. The SiHP054N65E is packaged in TO-220AB for increased dv/dt durability, complies with RoHS and Vishay green standards, is halogen-free, resists voltage transients in avalanche mode, and guarantees 100% UIS testing of the limit value.