Vishay Semiconductor Diodes Division 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Vishay Semiconductor Diodes Division
記錄 11,281
頁面 252/377
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 90A HALFPAK |
4,482 |
|
HEXFRED® | Standard | 400V | 90A | 1.3V @ 90A | Fast Recovery =< 500ns, > 200mA (Io) | 140ns | 6µA @ 400V | - | Chassis Mount | D-67 HALF-PAK | HALF-PAK | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GP 600V 250A MAGNAPAK |
3,528 |
|
- | Standard | 600V | 250A | - | Standard Recovery >500ns, > 200mA (Io) | 1µs | 50mA @ 600V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 250A MAGNAPAK |
3,456 |
|
- | Standard | 1000V | 250A | - | Standard Recovery >500ns, > 200mA (Io) | 1µs | 50mA @ 1000V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
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Vishay Semiconductor Diodes Division |
DIODE GP 1.2KV 250A MAGNAPAK |
8,640 |
|
- | Standard | 1200V | 250A | - | Standard Recovery >500ns, > 200mA (Io) | 2µs | 50mA @ 1200V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GP 1.4KV 250A MAGNAPAK |
4,410 |
|
- | Standard | 1400V | 250A | - | Standard Recovery >500ns, > 200mA (Io) | 2µs | 50mA @ 1400V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 240A MAGNAPAK |
6,750 |
|
- | Standard | 2000V | 240A | - | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 2000V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GP 2.5KV 240A MAGNAPAK |
3,418 |
|
- | Standard | 2500V | 240A | - | Standard Recovery >500ns, > 200mA (Io) | 3µs | 50mA @ 2500V | - | Chassis Mount | 3-MAGN-A-PAK™ | MAGN-A-PAK® | - |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 10A TO220AC |
8,406 |
|
- | Standard | 1000V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC |
8,784 |
|
- | Standard | 1200V | 10A | 1.33V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | 310ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220AC |
4,698 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220AC |
6,804 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220AC |
8,370 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220AC |
7,812 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220AC |
7,488 |
|
- | Standard | 800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 800V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO220AC |
2,628 |
|
- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1000V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220AC |
2,068 |
|
- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 400ns | 100µA @ 1200V | - | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 10A TO220FP |
5,868 |
|
- | Standard | 800V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 10A TO220FP |
5,580 |
|
- | Standard | 1200V | 10A | 1.1V @ 10A | Standard Recovery >500ns, > 200mA (Io) | - | 50µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 20A TO220FP |
8,460 |
|
- | Standard | 200V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO220FP |
4,036 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-220-3 Full Pack | TO-220AB Full-Pak | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 20A TO220FP |
716 |
|
- | Standard | 600V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO220FP |
5,922 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO220FP |
7,668 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Through Hole | TO-220-2 Full Pack | TO-220AC Full Pack | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC |
4,734 |
|
- | Standard | 400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
6,444 |
|
- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 30A TO247AC |
3,490 |
|
- | Standard | 1000V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1000V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 30A TO247AC |
3,780 |
|
- | Standard | 1200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 450ns | 100µA @ 1200V | - | Through Hole | TO-247-3 | TO-247AC | -40°C ~ 150°C |
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 30A TO247AC |
123 |
|
- | Standard | 200V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 200V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 30A TO247AC |
3,384 |
|
- | Standard | 400V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 400V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO247AC |
6,534 |
|
- | Standard | 600V | 30A | 1.41V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 160ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AC Modified | -40°C ~ 150°C |