Vishay Semiconductor Diodes Division 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Vishay Semiconductor Diodes Division
記錄 11,281
頁面 281/377
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204 |
3,348 |
|
SUPERECTIFIER® | Standard | 1000V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 3.5µs | 5µA @ 1000V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
8,586 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 2A GP20 |
5,652 |
|
- | Standard | 400V | 2A | 1.1V @ 2A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
2,484 |
|
SUPERECTIFIER® | Standard | 100V | 3A | 1.2V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
3,436 |
|
SUPERECTIFIER® | Standard | 200V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
4,824 |
|
SUPERECTIFIER® | Standard | 400V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 3A DO201AD |
6,282 |
|
SUPERECTIFIER® | Standard | 600V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
3,006 |
|
SUPERECTIFIER® | Standard | 800V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 3A DO201AD |
8,622 |
|
SUPERECTIFIER® | Standard | 1000V | 3A | 1.1V @ 3A | Standard Recovery >500ns, > 200mA (Io) | 5µs | 5µA @ 1000V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 1.5A DO204AC |
7,218 |
|
- | Standard | 50V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1.5A DO204AC |
7,470 |
|
- | Standard | 100V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1.5A DO204AC |
3,544 |
|
- | Standard | 200V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 200V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO204AC |
3,456 |
|
- | Standard | 400V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 400V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1.5A DO204AC |
5,040 |
|
- | Standard | 600V | 1.5A | - | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 1.5A DO204AC |
6,318 |
|
- | Standard | 800V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 800V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 1.5A DO204 |
7,056 |
|
- | Standard | 1000V | 1.5A | 1.1V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 1000V | 8pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
8,028 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 50V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 50V 6A P600 |
6,588 |
|
- | Standard | 50V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 50V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
6,876 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
5,670 |
|
- | Standard | 100V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 100V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
2,100 |
|
- | Standard | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 200V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
6,480 |
|
- | Standard | 200V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 200V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
8,658 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
5,742 |
|
- | Standard | 400V | 6A | 1.1V @ 6A | Standard Recovery >500ns, > 200mA (Io) | 5.5µs | 5µA @ 400V | - | Through Hole | P600, Axial | P600 | -55°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 4A DO201AD |
7,020 |
|
- | Standard | 600V | 4A | 1.28V @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 10µA @ 600V | - | Through Hole | DO-201AD, Axial | DO-201AD | - |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AL |
4,788 |
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- | Standard | 600V | 1A | 1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 1A MPG06 |
3,312 |
|
- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 100V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 1A MPG06 |
2,466 |
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- | Standard | 200V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 200V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A MPG06 |
4,230 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 400V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A MPG06 |
4,500 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 600ns | 5µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | MPG06, Axial | MPG06 | -55°C ~ 150°C |