Vishay Semiconductor Diodes Division 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Vishay Semiconductor Diodes Division
記錄 11,281
頁面 331/377
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 5A DO201AD |
7,524 |
|
- | Standard | 800V | 5A | 1.35V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | 125°C (Max) |
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Vishay Semiconductor Diodes Division |
DIODE AVALANCHE 200V 2A DO214AC |
2,268 |
|
- | Avalanche | 200V | 2A | 1.1V @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 25ns | 1µA @ 200V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 5A GP20 |
3,690 |
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SUPERECTIFIER® | Standard | 200V | 5A | 950mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 5µA @ 200V | 95pF @ 4V, 1MHz | Through Hole | DO-201AA, DO-27, Axial | GP20 | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
11,335 |
|
- | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 30ns | 10µA @ 200V | 18pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 5A P600 |
5,742 |
|
- | Standard | 100V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 300pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 5A P600 |
3,834 |
|
- | Standard | 400V | 5A | 1.1V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 400V | 300pF @ 4V, 1MHz | Through Hole | P600, Axial | P600 | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
5,040 |
|
- | Standard | 100V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 100V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 3A DO201AD |
8,694 |
|
- | Standard | 200V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 200V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
5,112 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 400V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO204AC |
3,978 |
|
- | Standard | 600V | 1A | 1.25V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Through Hole | DO-204AC, DO-15, Axial | DO-204AC (DO-15) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A DO214AA |
3,312 |
|
- | Standard | 200V | 2A | 875mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 35ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
6,210 |
|
- | Standard | 400V | 3A | 1.25V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 400V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 500MA DO204 |
8,874 |
|
SUPERECTIFIER® | Standard | 2000V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 2KV 500MA DO204 |
5,382 |
|
SUPERECTIFIER® | Standard | 2000V | 500mA | 1.8V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 300ns | 5µA @ 2000V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 175°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1A DO214AC |
3,924 |
|
- | Standard | 400V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 400V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
7,866 |
|
- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | 1.8µs | 1µA @ 600V | 12pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 1.5A DO214AA |
6,984 |
|
- | Standard | 400V | 1.5A | 1.15V @ 1.5A | Standard Recovery >500ns, > 200mA (Io) | 2µs | 1µA @ 400V | 16pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | DO-214AA (SMB) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO214AB |
5,634 |
|
- | Standard | 400V | 3A | 1.15V @ 2.5A | Standard Recovery >500ns, > 200mA (Io) | 2.5µs | 10µA @ 400V | 60pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 30V 1.5A DO214AC |
7,002 |
|
- | Schottky | 30V | 1.5A | 445mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 30V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 40V 4A DO214AB |
3,258 |
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- | Schottky | 40V | 4A | 440mV @ 4A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | - | Surface Mount | DO-214AB, SMC | DO-214AB (SMC) | -55°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 3A DO201AD |
8,118 |
|
- | Standard | 100V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 100V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 3A DO201AD |
4,032 |
|
- | Standard | 400V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 3A DO201AD |
5,616 |
|
- | Standard | 800V | 3A | 1.3V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | 28pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 100V 6A P600 |
8,820 |
|
- | Standard | 100V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 100ns | 10µA @ 100V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 6A P600 |
6,012 |
|
- | Standard | 200V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 200V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 6A P600 |
6,714 |
|
- | Standard | 400V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 10µA @ 400V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 6A P600 |
8,694 |
|
- | Standard | 600V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 600V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 6A P600 |
3,366 |
|
- | Standard | 800V | 6A | 1.3V @ 6A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 10µA @ 800V | - | Through Hole | P600, Axial | P600 | -50°C ~ 125°C |
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Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 1A DO214AC |
2,106 |
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- | Schottky | 60V | 1A | 750mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 60V | - | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -65°C ~ 150°C |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 1A DO214AC |
8,334 |
|
- | Standard | 600V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Surface Mount | DO-214AC, SMA | DO-214AC (SMA) | -55°C ~ 150°C |