Vishay Semiconductor Diodes Division 整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
制造商Vishay Semiconductor Diodes Division
記錄 11,281
頁面 357/377
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型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 電容@ Vr,F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
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Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO263AB |
3,564 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 20A TO263 |
6,426 |
|
- | Standard | 400V | 20A | 1.3V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 60ns | 100µA @ 400V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D2Pak) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
3,816 |
|
- | Standard | 800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
3,474 |
|
- | Standard | 800V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 20A TO263AB |
2,682 |
|
- | Standard | 1000V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
2,610 |
|
- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
2,466 |
|
- | Standard | 1200V | 20A | 1.31V @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | 95ns | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 20A TO263AB |
3,726 |
|
- | Standard | 800V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 20A TO263AB |
4,392 |
|
- | Standard | 1200V | 20A | 1.1V @ 20A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A D2PAK |
5,742 |
|
Automotive, AEC-Q101 | Schottky | 35V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 35V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A D2PAK |
4,518 |
|
Automotive, AEC-Q101 | Schottky | 35V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 35V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A D2PAK |
5,904 |
|
Automotive, AEC-Q101 | Schottky | 40V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 40V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A D2PAK |
4,392 |
|
Automotive, AEC-Q101 | Schottky | 40V | 20A | 570mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2.7mA @ 40V | 1400pF @ 5V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A DPAK |
2,358 |
|
- | Schottky | 45V | 20A | 610mV @ 20A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 1900pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A DPAK |
8,838 |
|
- | Schottky | 45V | 20A | 540mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 1900pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 20A DPAK |
7,362 |
|
- | Schottky | 45V | 20A | 540mV @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 45V | 1900pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -55°C ~ 150°C |
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|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
7,830 |
|
- | Standard | 800V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 800V 25A TO263AB |
3,888 |
|
- | Standard | 800V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 800V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
2,358 |
|
- | Standard | 1000V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1KV 25A TO263AB |
7,254 |
|
- | Standard | 1000V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1000V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 25A TO263AB |
7,920 |
|
- | Standard | 1200V | 25A | 1.14V @ 25A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 1.2KV 24A D2PAK |
6,912 |
|
- | Standard | 1200V | 24A | 1.14V @ 25A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1200V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 200V 2A SMB |
7,722 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 200V | 2A | 900mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | 21ns | 2µA @ 200V | - | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 3.0A SMC |
7,002 |
|
- | Schottky | 100V | 3A | 790mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | - | Surface Mount | DO-214AB, SMC | SMC | -55°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
2,574 |
|
Automotive, AEC-Q101 | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 28ns | 50µA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 600V 30A TO263AB |
2,934 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 600V | 30A | 2.6V @ 30A | Fast Recovery =< 500ns, > 200mA (Io) | 31ns | 50mA @ 600V | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | -65°C ~ 175°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY DPAK |
8,928 |
|
- | Schottky | 60V | 3.5A | 610mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 2mA @ 60V | 145pF @ 5V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 90V 3.3A C16 |
7,164 |
|
- | Schottky | 90V | 3.3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 90V | 110pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | C-16 | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 100V 3.3A C16 |
8,892 |
|
- | Schottky | 100V | 3.3A | 850mV @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100µA @ 100V | 110pF @ 5V, 1MHz | Through Hole | DO-201AD, Axial | C-16 | -40°C ~ 150°C |
|
|
Vishay Semiconductor Diodes Division |
DIODE SCHOTTKY 60V 5A AXIAL |
5,112 |
|
- | Schottky | 60V | 5A | 660mV @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | - | 150µA @ 60V | 500pF @ 5V, 1MHz | Through Hole | DO-204AR, Axial | DO-204AR | -55°C ~ 175°C |