整流器-數組
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類別半導體 / 二極管與整流器 / 整流器-數組
記錄 11,588
頁面 212/387
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管配置 | 二極管類型 | 電壓-直流反向(Vr)(最大值) | 電流-平均整流(Io)(每個二極管) | 電壓-正向(Vf)(最大值)@如果 | 速度 | 反向恢復時間(trr) | 當前-反向泄漏@ Vr | 工作溫度-結點 | 安裝類型 | 包裝/箱 | 供應商設備包裝 |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GeneSiC Semiconductor |
DIODE GEN 1KV 200A 3 TOWER |
4,266 |
|
- | 1 Pair Series Connection | Standard | 1000V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1000V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.2KV 200A 3 TOWER |
5,382 |
|
- | 1 Pair Series Connection | Standard | 1200V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1200V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.4KV 200A 3 TOWER |
3,204 |
|
- | 1 Pair Series Connection | Standard | 1400V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1400V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN 1.6KV 200A 3 TOWER |
6,282 |
|
- | 1 Pair Series Connection | Standard | 1600V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 1600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 600V 200A 3 TOWER |
3,562 |
|
- | 1 Pair Series Connection | Standard | 600V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 600V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE GEN PURP 800V 200A 3 TOWER |
8,928 |
|
- | 1 Pair Series Connection | Standard | 800V | 200A | 1.1V @ 200A | Standard Recovery >500ns, > 200mA (Io) | - | 10µA @ 800V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
Sensata-Crydom |
DIODE MODULE 600V 55A |
2,862 |
|
- | 1 Pair Common Anode | Standard | 600V | 55A (DC) | 1.4V @ 165A | Standard Recovery >500ns, > 200mA (Io) | - | - | -40°C ~ 125°C | Chassis Mount | Module | Module |
|
|
Infineon Technologies |
DIODE MODULE GP 1200V 89A |
3,400 |
|
- | 1 Pair Common Cathode | Standard | 1200V | 89A | 1.5V @ 300A | Standard Recovery >500ns, > 200mA (Io) | - | 20mA @ 1200V | -40°C ~ 150°C | Chassis Mount | Module | Module |
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 500A 3TOWER |
4,914 |
|
- | 1 Pair Common Cathode | Schottky | 20V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 20V 500A 3TOWER |
4,320 |
|
- | 1 Pair Common Anode | Schottky | 20V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 500A 3TOWER |
7,398 |
|
- | 1 Pair Common Cathode | Schottky | 30V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 30V 500A 3TOWER |
6,804 |
|
- | 1 Pair Common Anode | Schottky | 30V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 500A 3TOWER |
4,950 |
|
- | 1 Pair Common Cathode | Schottky | 35V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 35V 500A 3TOWER |
6,822 |
|
- | 1 Pair Common Anode | Schottky | 35V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 40V 500A 3TOWER |
2,646 |
|
- | 1 Pair Common Cathode | Schottky | 40V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 40V 500A 3TOWER |
8,460 |
|
- | 1 Pair Common Anode | Schottky | 40V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 500A 3TOWER |
2,340 |
|
- | 1 Pair Common Cathode | Schottky | 45V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 45V 500A 3TOWER |
7,434 |
|
- | 1 Pair Common Anode | Schottky | 45V | 500A (DC) | 750mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 60V 500A 3TOWER |
8,550 |
|
- | 1 Pair Common Cathode | Schottky | 60V | 500A (DC) | 800mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 60V 500A 3TOWER |
2,394 |
|
- | 1 Pair Common Anode | Schottky | 60V | 500A (DC) | 800mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 500A 3TOWER |
4,500 |
|
- | 1 Pair Common Cathode | Schottky | 80V | 500A (DC) | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 80V 500A 3TOWER |
7,308 |
|
- | 1 Pair Common Anode | Schottky | 80V | 500A (DC) | 880mV @ 250A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 100A 3TOWER |
4,428 |
|
- | 1 Pair Common Cathode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 50V 100A 3TOWER |
3,168 |
|
- | 1 Pair Common Anode | Standard | 50V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -55°C ~ 150°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER |
4,446 |
|
- | 1 Pair Common Cathode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE MODULE 100V 100A 3TOWER |
4,680 |
|
- | 1 Pair Common Anode | Standard | 100V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | - | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP 200V 100A 3TOWER |
101 |
|
- | - | Standard | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR 3TOWER |
8,208 |
|
- | - | Standard, Reverse Polarity | 200V | 100A (DC) | 1.3V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP 400V 100A 3TOWER |
7,326 |
|
- | - | Standard | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |
|
|
GeneSiC Semiconductor |
DIODE ARRAY GP REV POLAR3TOWER |
8,568 |
|
- | - | Standard, Reverse Polarity | 400V | 100A (DC) | 1.35V @ 50A | Fast Recovery =< 500ns, > 200mA (Io) | 90ns | 25µA @ 50V | -40°C ~ 175°C | Chassis Mount | Three Tower | Three Tower |