整流器-單
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類別半導體 / 二極管與整流器 / 整流器-單
記錄 34,936
頁面 163/1165
圖片 |
型號 |
制造商 |
描述 |
庫存 |
數量 |
系列 | 二極管類型 | 電壓-直流反向（Vr）（最大值） | 電流-平均整流（Io） | 電壓-正向（Vf）（最大值）@如果 | 速度 | 反向恢復時間（trr） | 當前-反向泄漏@ Vr | 電容@ Vr，F | 安裝類型 | 包裝/箱 | 供應商設備包裝 | 工作溫度-結點 |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
STMicroelectronics |
DIODE GEN PURP 400V 60A DO247 |
17,076 |
|
- | Standard | 400V | 60A | 1.5V @ 60A | Fast Recovery =< 500ns, > 200mA (Io) | 80ns | 60µA @ 400V | - | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
ON Semiconductor |
SIC DIODE 650V |
11,124 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 20A | 1.7V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 866pF @ 1V, 100kHz | Through Hole | TO-247-2 | TO-247-2 | -55°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
14,160 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 650V | 710pF @ 0V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220F | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
11,304 |
|
Automotive, AEC-Q101 | Standard | 1600V | 65A | 1.17V @ 65A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
9,540 |
|
Automotive, AEC-Q101 | Standard | 1600V | 65A | 1.17V @ 65A | Standard Recovery >500ns, > 200mA (Io) | - | 100µA @ 1600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
20,412 |
|
- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 500pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
Infineon Technologies |
DIODE SCHOTTKY 650V 27A TO220-2 |
2,462 |
|
- | Silicon Carbide Schottky | 650V | 27A (DC) | 1.35V @ 12A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 420V | 594pF @ 1V, 1MHz | Through Hole | TO-220-2 | PG-TO220-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
650V 20A SIC SBD GEN1.5 |
9,168 |
|
Automotive, AEC-Q101 | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 40µA @ 650V | 421pF @ 1V, 100kHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SIC SCHOTTKY 1200V 8A |
21,324 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 24.5A (DC) | 1.8V @ 8A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 454pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODE GEN PURP 400V 80A POWERTAB |
9,588 |
|
Automotive, AEC-Q101, FRED Pt® | Standard | 400V | 80A | 1.3V @ 80A | Fast Recovery =< 500ns, > 200mA (Io) | 87ns | 50µA @ 400V | - | Through Hole | PowerTab® | PowerTab® | -55°C ~ 175°C |
|
|
|
Infineon Technologies |
IGBT 650V 40A TO247-3 |
8,256 |
|
- | Standard | 650V | 42A (DC) | 2.1V @ 40A | Fast Recovery =< 500ns, > 200mA (Io) | 76ns | 40µA @ 650V | - | Through Hole | TO-247-3 | PG-TO247-3-AI | -40°C ~ 175°C |
|
|
|
Comchip Technology |
DIODE SILICON CARBIDE POWER SCHO |
9,996 |
|
- | Silicon Carbide Schottky | 1200V | 18A (DC) | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 475pF @ 0V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252) | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 1.2KV 10A TO220-2 |
2,532 |
|
- | Silicon Carbide Schottky | 1200V | 10A (DC) | 1.75V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 200µA @ 1200V | 612pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
16,332 |
|
Automotive, AEC-Q101 | Standard | 600V | 65A | 1.32V @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
10,404 |
|
Automotive, AEC-Q101 | Standard | 1200V | 65A | 1.42V @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-3P-3, SC-65-3 (Formed Leads) | TO-247AD | -40°C ~ 150°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
9,324 |
|
Automotive, AEC-Q101 | Standard | 600V | 65A | 1.32V @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | 180ns | 100µA @ 600V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
DIODES SILICON CARBIDE |
20,832 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | 1.5V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 650V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 Full Pack | TO-220FM | 175°C (Max) |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
7,296 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Through Hole | TO-220-3 Full Pack, Isolated Tab | ITO-220AB | -55°C ~ 175°C |
|
|
|
SMC Diode Solutions |
DIODE SCHOTTKY SILICON CARBIDE S |
8,256 |
|
- | Silicon Carbide Schottky | 650V | 5A | 1.7V @ 5A | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | - | Through Hole | TO-220-3 | TO-220AB | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 20A TO220AC |
2,764 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220AC | -40°C ~ 175°C |
|
|
|
Cree/Wolfspeed |
10A 650V G6 ZREC SIC SCHOTTKY DI |
6,331 |
|
Z-Rec® | Silicon Carbide Schottky | 650V | 37A (DC) | 1.5V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 611pF @ 0V, 1MHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Littelfuse |
DIODE SCHOTTKY SIC 650V 6A DUAL |
11,556 |
|
Automotive, AEC-Q101, GEN2 | Silicon Carbide Schottky | 650V | 18.5A (DC) | 1.8V @ 6A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 300pF @ 1V, 1MHz | Through Hole | TO-247-3 | TO-247-3 | -55°C ~ 175°C |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
16,680 |
|
- | Silicon Carbide Schottky | 650V | 12A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 60µA @ 650V | 600pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Infineon Technologies |
SIC SCHOTTKY 1200V 10A TO247-2 |
6,792 |
|
CoolSiC™+ | Silicon Carbide Schottky | 1200V | 34A (DC) | 1.65V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 80µA @ 1200V | 730pF @ 1V, 1MHz | Through Hole | TO-247-2 | PG-TO247-2 | -55°C ~ 175°C |
|
|
|
ON Semiconductor |
DIODE SCHOTTKY 650V 16A TO220-2 |
14,688 |
|
- | Silicon Carbide Schottky | 650V | 16A (DC) | 1.75V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 200µA @ 650V | 887pF @ 1V, 100kHz | Through Hole | TO-220-2 | TO-220-2 | -55°C ~ 175°C |
|
|
|
Littelfuse |
SCHOTTKY DIODE SIC 1200V 15A |
19,656 |
|
Gen2 | Silicon Carbide Schottky | 1200V | 44A (DC) | 1.8V @ 15A | No Recovery Time > 500mA (Io) | 0ns | 100µA @ 1200V | 920pF @ 1V, 1MHz | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2L | -55°C ~ 175°C |
|
|
|
STMicroelectronics |
DIODE SCHOTTKY 650V 20A DO247 |
18,120 |
|
ECOPACK®2 | Silicon Carbide Schottky | 650V | 20A | 1.45V @ 20A | No Recovery Time > 500mA (Io) | 0ns | 300µA @ 650V | 1250pF @ 0V, 1MHz | Through Hole | DO-247-2 (Straight Leads) | DO-247 | -40°C ~ 175°C |
|
|
|
Vishay Semiconductor Diodes Division |
DIODES - TO-247-E3 |
7,956 |
|
Automotive, AEC-Q101 | Standard | 1200V | 65A | 1.42V @ 65A | Fast Recovery =< 500ns, > 200mA (Io) | 480ns | 100µA @ 1200V | - | Through Hole | TO-247-2 | TO-247AD | -40°C ~ 150°C |
|
|
|
Rohm Semiconductor |
SHORTER RECOVERY TIME, ENABLING |
18,756 |
|
- | Silicon Carbide Schottky | 650V | 15A (DC) | - | No Recovery Time > 500mA (Io) | 0ns | 75µA @ 650V | 750pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220ACP | 175°C (Max) |
|
|
|
Littelfuse |
SIC SCHOTTKY DIOD 650V 16A TO220 |
13,662 |
|
Gen2 | Silicon Carbide Schottky | 650V | 38A (DC) | 1.8V @ 16A | No Recovery Time > 500mA (Io) | 0ns | 50µA @ 650V | 730pF @ 1V, 1MHz | Through Hole | TO-220-2 | TO-220-2L | -55°C ~ 175°C |